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(2020) Silicon Crystal Growth: Lumped Parameter Model for Silicon Crystal Growth from Granulate Crucible (Crystal Research and Technology 8/2020) Crystal Research and Technology, 55 (8) doi:10.1002/crat.202070025

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Reference TypeJournal (article/letter/editorial)
TitleSilicon Crystal Growth: Lumped Parameter Model for Silicon Crystal Growth from Granulate Crucible (Crystal Research and Technology 8/2020)
JournalCrystal Research and Technology
Year2020 (August)Volume55
Issue8
PublisherWiley
DOIdoi:10.1002/crat.202070025Search in ResearchGate
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Mindat Ref. ID16984864Long-form Identifiermindat:1:5:16984864:6
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Full Reference(2020) Silicon Crystal Growth: Lumped Parameter Model for Silicon Crystal Growth from Granulate Crucible (Crystal Research and Technology 8/2020) Crystal Research and Technology, 55 (8) doi:10.1002/crat.202070025
Plain Text(2020) Silicon Crystal Growth: Lumped Parameter Model for Silicon Crystal Growth from Granulate Crucible (Crystal Research and Technology 8/2020) Crystal Research and Technology, 55 (8) doi:10.1002/crat.202070025
In(2020, August) Crystal Research & Technology Vol. 55 (8)

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Lorenzā€Meyer, M. Nicolai L., Menzel, Robert, Dadzis, Kaspars, Nikiforova, Angelina, Riemann, Helge (2020) Lumped Parameter Model for Silicon Crystal Growth from Granulate Crucible. Crystal Research and Technology, 55 (8) doi:10.1002/crat.202000044
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