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Mokhtari, F., Bouabdallah, A., Zizi, M., Hanchi, S., Alemany, A. (2009) Combined effects of crucible geometry and Marangoni convection on silicon Czochralski crystal growth. Crystal Research and Technology, 44 (8) 787-799 doi:10.1002/crat.200800580

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Reference TypeJournal (article/letter/editorial)
TitleCombined effects of crucible geometry and Marangoni convection on silicon Czochralski crystal growth
JournalCrystal Research and Technology
AuthorsMokhtari, F.Author
Bouabdallah, A.Author
Zizi, M.Author
Hanchi, S.Author
Alemany, A.Author
Year2009 (August)Volume44
Issue8
PublisherWiley
DOIdoi:10.1002/crat.200800580Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID16986987Long-form Identifiermindat:1:5:16986987:0
GUID0
Full ReferenceMokhtari, F., Bouabdallah, A., Zizi, M., Hanchi, S., Alemany, A. (2009) Combined effects of crucible geometry and Marangoni convection on silicon Czochralski crystal growth. Crystal Research and Technology, 44 (8) 787-799 doi:10.1002/crat.200800580
Plain TextMokhtari, F., Bouabdallah, A., Zizi, M., Hanchi, S., Alemany, A. (2009) Combined effects of crucible geometry and Marangoni convection on silicon Czochralski crystal growth. Crystal Research and Technology, 44 (8) 787-799 doi:10.1002/crat.200800580
In(2009, August) Crystal Research & Technology Vol. 44 (8)

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Mokhtari, F., Bouabdallah, A., Merah, A., Zizi, M., Hanchi, S., Alemany, A. (2010) Three‐dimensional study of the pressure field and advantages of hemispherical crucible in silicon Czochralski crystal growth. Crystal Research and Technology, 45 (6) 573-582 doi:10.1002/crat.201000033
Mokhtari, F, Bouabdallah, A, Zizi, M, Hanchi, S, Alemany, A (2010) Forced and thermocapillary convection in silicon Czochralski crystal growth in semispherical crucible. Journal of Physics: Conference Series, 216. 12014pp. doi:10.1088/1742-6596/216/1/012014
Mokhtari, F., Bouabdallah, A., Merah, A., Oualli, H. (2012) Numerical investigation of magnetic field effect on pressure in cylindrical and hemispherical silicon CZ crystal growth. Crystal Research and Technology, 47 (12) 1269-1278 doi:10.1002/crat.201200309
(2020) Silicon Crystal Growth: Lumped Parameter Model for Silicon Crystal Growth from Granulate Crucible (Crystal Research and Technology 8/2020) Crystal Research and Technology, 55 (8) doi:10.1002/crat.202070025
Cen, Xianrong, Zhan, Jiemin, Li, Yok‐Sheung (2011) Large eddy simulation of Marangoni convection in Czochralski crystal growth. Crystal Research and Technology, 46 (1) 14-22 doi:10.1002/crat.201000503
Rossolenko, S. N. (2009) Modification of the mass weighing in A3B5 automated Czochralski crystal growth techniques. Crystal Research and Technology, 44 (9) 1005-1008 doi:10.1002/crat.200900394
Zermout, S., Mokhtari, F., Nehari, A., Lasloudji, I., Haddad, F., Merah, A. (2019) 3D Anisotropic Stress Analysis during Kyropoulos Growth of Sapphire Single Crystal. Crystal Research and Technology, 54 (8) doi:10.1002/crat.201900058
Cröll, A., Mitric, A., Aniol, O., Schütt, S., Simon, P. (2009) Solutocapillary convection in germanium‐silicon melts. Crystal Research and Technology, 44 (10) 1101-1108 doi:10.1002/crat.200900435
Lorenz‐Meyer, M. Nicolai L., Menzel, Robert, Dadzis, Kaspars, Nikiforova, Angelina, Riemann, Helge (2020) Lumped Parameter Model for Silicon Crystal Growth from Granulate Crucible. Crystal Research and Technology, 55 (8) doi:10.1002/crat.202000044
(2018) Numerical Simulation: Numerical Simulation on Effect of Rotation on Thermal Convection in a Shallow Model Czochralski Configuration with a Heated Bottom (Crystal Research and Technology 9/2018) Crystal Research and Technology, 53 (9) doi:10.1002/crat.201870016
Tavakoli, M. H., Wilke, H., Crnogorac, N. (2007) Influence of the crucible bottom shape on the heat transport and fluid flow during the seeding process of oxide Czochralski crystal growth. Crystal Research and Technology, 42 (12) 1252-1258 doi:10.1002/crat.200711014
 
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