Li, An, Hoshii, Takuya, Tsutsui, Kazuo, Wakabayashi, Hitoshi, Kakushima, Kuniyuki (2024) Improved electrical characteristics of 4H-SiC (0001) MOS devices with atomic layer deposited SiO₂ gate dielectric with H₂O plasma. Japanese Journal of Applied Physics, 63 (6). doi:10.35848/1347-4065/ad52db

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	Saks, N. S., Mani, S. S., Agarwal, A. K. (2000) Interface trap profile near the band edges at the 4H-SiC/SiO2 interface. Applied Physics Letters, 76 (16). 2250-2252 doi:10.1063/1.126311
	Not Yet Imported: - journal-article : 10.1109/TED.2014.2356172 If you would like this item imported into the Digital Library, please contact us quoting Journal ID
	Not Yet Imported: IEEE Transactions on Electron Devices - journal-article : 10.1109/16.944171 If you would like this item imported into the Digital Library, please contact us quoting Journal ID
	Not Yet Imported: - journal-article : 10.7567/APEX.10.046601 If you would like this item imported into the Digital Library, please contact us quoting Journal ID
	Not Yet Imported: Microelectronics Reliability - journal-article : 10.1016/j.microrel.2005.10.013 If you would like this item imported into the Digital Library, please contact us quoting Journal ID
	Chung, G. Y., Tin, C. C., Williams, J. R., McDonald, K., Di Ventra, M., Pantelides, S. T., Feldman, L. C., Weller, R. A. (2000) Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide. Applied Physics Letters, 76 (13). 1713-1715 doi:10.1063/1.126167
	Not Yet Imported: - journal-article : 10.1109/55.915604 If you would like this item imported into the Digital Library, please contact us quoting Journal ID
	McDonald, K., Feldman, L. C., Weller, R. A., Chung, G. Y., Tin, C. C., Williams, J. R. (2003) Kinetics of NO nitridation in SiO2/4H–SiC. Journal of Applied Physics, 93 (4). 2257-2261 doi:10.1063/1.1539541
	Chen, X. D., Dhar, S., Isaacs-Smith, T., Williams, J. R., Feldman, L. C., Mooney, P. M. (2008) Electron capture and emission properties of interface states in thermally oxidized and NO-annealed SiO2/4H-SiC. Journal of Applied Physics, 103 (3). 33701pp. doi:10.1063/1.2837028
	Not Yet Imported: AIP Advances - journal-article : 10.1063/1.4930980 If you would like this item imported into the Digital Library, please contact us quoting Journal ID
	Lipkin, Lori A., Das, Mrinal K., Palmour, John W. (2002) N2O Processing Improves the 4H-SiC:SiO2 Interface. Materials Science Forum, 389. 985-988 doi:10.4028/www.scientific.net/msf.389-393.985
	Kimoto, Tsunenobu, Kanzaki, Yosuke, Noborio, Masato, Kawano, Hiroaki, Matsunami, Hiroyuki (2005) Interface Properties of Metal–Oxide–Semiconductor Structures on 4H-SiC{0001} and (11\bar20) Formed by N2O Oxidation. Japanese Journal of Applied Physics, 44 (3) 1213-1218 doi:10.1143/jjap.44.1213
	Not Yet Imported: - journal-article : 10.1016/j.sse.2004.10.016 If you would like this item imported into the Digital Library, please contact us quoting Journal ID
	Senzaki, Junji, Suzuki, Takuma, Shimozato, Atsushi, Fukuda, Kenji, Arai, Kazuo, Okumura, Hajime (2010) Significant Improvement in Reliability of Thermal Oxide on 4H-SiC (0001) Face Using Ammonia Post-Oxidation Annealing. Materials Science Forum, 645. 685-688 doi:10.4028/www.scientific.net/msf.645-648.685
	Soejima, Narumasa, Kimura, Taishi, Ishikawa, Tsuyoshi, Sugiyama, Takahide (2013) Effect of NH3 Post-Oxidation Annealing on Flatness of SiO2/SiC Interface. Materials Science Forum, 740. 723-726 doi:10.4028/www.scientific.net/msf.740-742.723
	Maeyama, Yuusuke, Yano, Hiroshi, Furumoto, Yoshihisa, Hatayama, Tomoaki, Uraoka, Yukiharu, Fuyuki, Takashi (2003) Improvement of SiO2/SiC Interface Properties by Nitrogen Radical Irradiation. Japanese Journal of Applied Physics, 42. doi:10.1143/jjap.42.l575
	Not Yet Imported: - journal-article : 10.35848/1882-0786/ababed If you would like this item imported into the Digital Library, please contact us quoting Journal ID
	Not Yet Imported: - journal-article : 10.1109/LED.2010.2047239 If you would like this item imported into the Digital Library, please contact us quoting Journal ID
	Okamoto, Dai, Yano, Hiroshi, Hatayama, Tomoaki, Fuyuki, Takashi (2012) Development of 4H-SiC MOSFETs with Phosphorus-Doped Gate Oxide. Materials Science Forum, 717. 733-738 doi:10.4028/www.scientific.net/msf.717-720.733
	Not Yet Imported: - journal-article : 10.35848/1882-0786/ac23e8 If you would like this item imported into the Digital Library, please contact us quoting Journal ID
	Not Yet Imported: - journal-article : 10.35848/1882-0786/ace7ac If you would like this item imported into the Digital Library, please contact us quoting Journal ID
	Yano, Hiroshi, Hatayama, Tomoaki, Uraoka, Yukiharu, Fuyuki, Takashi (2005) High Temperature NO Annealing of Deposited SiO2 and SiON Films on N-Type 4H-SiC. Materials Science Forum, 483. 685-688 doi:10.4028/www.scientific.net/msf.483-485.685
	Kimoto, Tsunenobu, Kawano, H., Noborio, Masato, Suda, Jun, Matsunami, Hiroyuki (2006) Improved Dielectric and Interface Properties of 4H-SiC MOS Structures Processed by Oxide Deposition and N2O Annealing. Materials Science Forum, 527. 987-990 doi:10.4028/www.scientific.net/msf.527-529.987
	Not Yet Imported: - journal-article : 10.1186/s11671-019-2889-y If you would like this item imported into the Digital Library, please contact us quoting Journal ID
	Not Yet Imported: - journal-article : 10.1016/j.tsf.2012.10.043 If you would like this item imported into the Digital Library, please contact us quoting Journal ID
	Not Yet Imported: - journal-article : 10.1149/1.3122106 If you would like this item imported into the Digital Library, please contact us quoting Journal ID
	Sneh, Ofer, George, Steven M. (1995) Thermal Stability of Hydroxyl Groups on a Well-Defined Silica Surface. The Journal of Physical Chemistry, 99 (13). 4639-4647 doi:10.1021/j100013a039
	Not Yet Imported: - journal-article : 10.1116/1.576818 If you would like this item imported into the Digital Library, please contact us quoting Journal ID
	Not Yet Imported: - journal-article : 10.1366/12-06873 If you would like this item imported into the Digital Library, please contact us quoting Journal ID
	Ward, L. J., Schofield, W. C. E., Badyal, J. P. S., Goodwin, A. J., Merlin, P. J. (2003) Atmospheric Pressure Glow Discharge Deposition of Polysiloxane and SiOxFilms. Langmuir, 19. 2110-2114 doi:10.1021/la0204287
	Kopani, M., Mikula, M., Takahashi, M., Rusnák, J., Pinčík, E. (2013) FT IR spectroscopy of silicon oxide layers prepared with perchloric acid. Applied Surface Science, 269. 106-109 doi:10.1016/j.apsusc.2012.09.081
	Not Yet Imported: - journal-article : 10.1116/1.581517 If you would like this item imported into the Digital Library, please contact us quoting Journal ID
	Not Yet Imported: ECS Transactions - journal-article : 10.1149/1.3572283 If you would like this item imported into the Digital Library, please contact us quoting Journal ID
	Not Yet Imported: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films - journal-article : 10.1116/1.576885 If you would like this item imported into the Digital Library, please contact us quoting Journal ID
	Not Yet Imported: - journal-article : 10.1116/1.581745 If you would like this item imported into the Digital Library, please contact us quoting Journal ID
	Lucovsky, Gerald, Niimi, Hiro (2004) Remote plasma-assisted oxidation of SiC: a low temperature process for SiC–SiO2 interface formation that eliminates interfacial Si oxycarbide transition regions. Journal of Physics: Condensed Matter, 16 (17). doi:10.1088/0953-8984/16/17/018
	Not Yet Imported: Solid-State Electronics - journal-article : 10.1016/0038-1101(62)90111-9 If you would like this item imported into the Digital Library, please contact us quoting Journal ID
	Not Yet Imported: - journal-article : 10.1557/PROC-640-H3.2 If you would like this item imported into the Digital Library, please contact us quoting Journal ID
	Bathen, M. E., Lew, C. T.-K., Woerle, J., Dorfer, C., Grossner, U., Castelletto, S., Johnson, B. C. (2022) Characterization methods for defects and devices in silicon carbide. Journal of Applied Physics, 131 (14) 140903pp. doi:10.1063/5.0077299
	Satake, Hideki, Toriumi, Akira (1995) Common origin for stress‐induced leakage current and electron trap generation in SiO2. Applied Physics Letters, 67 (23). 3489-3490 doi:10.1063/1.115256
	Not Yet Imported: International Electron Devices Meeting. IEDM Technical Digest - proceedings-article : 10.1109/IEDM.1997.650480 If you would like this item imported into the Digital Library, please contact us quoting Journal ID
	Gdula, R. A. (1976) The Effects of Processing on Hot Electron Trapping in SiO[sub 2]. Journal of the Electrochemical Society, 123. 42pp. doi:10.1149/1.2132762
	Hartstein, A., Young, D. R. (1981) Identification of electron traps in thermal silicon dioxide films. Applied Physics Letters, 38 (8). 631-633 doi:10.1063/1.92459
	Griscom, David L. (1984) Thermal bleaching of x-ray-induced defect centers in high purity fused silica by diffusion of radiolytic molecular hydrogen. Journal of Non-Crystalline Solids, 68 (2) 301-325 doi:10.1016/0022-3093(84)90013-9
	GRISCOM, David L. (1991) Optical Properties and Structure of Defects in Silica Glass. Journal of the Ceramic Society of Japan, 99 (1154) 923-942 doi:10.2109/jcersj.99.923
	Hirai, Hirohisa, Kita, Koji (2017) Difference of near-interface strain in SiO2 between thermal oxides grown on 4H-SiC by dry-O2 oxidation and H2O oxidation characterized by infrared spectroscopy. Applied Physics Letters, 110 (15). 152104pp. doi:10.1063/1.4980093
	Song, Jinhan, Ohta, Atsuhiro, Hoshii, Takuya, Wakabayashi, Hitoshi, Tsutsui, Kazuo, Kakushima, Kuniyuki (2021) High field-effect mobility with suppressed negative threshold voltage shift in 4H-SiC MOSFET with cerium oxide interfacial layer. Japanese Journal of Applied Physics, 60 (3) 30901 doi:10.35848/1347-4065/abdf7c

See Also

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