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Ding, Zhengqing; Zhu, Anyao; Yang, Chaoyuan; Zhan, Kun; Chen, Yingxin; Yu, Ying; Yu, Siyuan (2025) Single-mode InAs/GaAs quantum-dot DFB laser with oxidized aperture confined surface grating. Applied Physics Letters, 126 (14). doi:10.1063/5.0260625

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Reference TypeJournal (article/letter/editorial)
TitleSingle-mode InAs/GaAs quantum-dot DFB laser with oxidized aperture confined surface grating
JournalApplied Physics Letters
AuthorsDing, ZhengqingAuthor
Zhu, AnyaoAuthor
Yang, ChaoyuanAuthor
Zhan, KunAuthor
Chen, YingxinAuthor
Yu, YingAuthor
Yu, SiyuanAuthor
Year2025 (April 1)Volume126
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/5.0260625Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID18311416Long-form Identifiermindat:1:5:18311416:1
GUID0
Full ReferenceDing, Zhengqing; Zhu, Anyao; Yang, Chaoyuan; Zhan, Kun; Chen, Yingxin; Yu, Ying; Yu, Siyuan (2025) Single-mode InAs/GaAs quantum-dot DFB laser with oxidized aperture confined surface grating. Applied Physics Letters, 126 (14). doi:10.1063/5.0260625
Plain TextDing, Zhengqing; Zhu, Anyao; Yang, Chaoyuan; Zhan, Kun; Chen, Yingxin; Yu, Ying; Yu, Siyuan (2025) Single-mode InAs/GaAs quantum-dot DFB laser with oxidized aperture confined surface grating. Applied Physics Letters, 126 (14). doi:10.1063/5.0260625
In(2025, April) Applied Physics Letters Vol. 126 (14). AIP Publishing

References Listed

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Liu, H. Y., Liew, S. L., Badcock, T., Mowbray, D. J., Skolnick, M. S., Ray, S. K., Choi, T. L., Groom, K. M., Stevens, B., Hasbullah, F., Jin, C. Y., Hopkinson, M., Hogg, R. A. (2006) p-doped 1.3ÎŒm InAs∕GaAs quantum-dot laser with a low threshold current density and high differential efficiency. Applied Physics Letters, 89 (7). 73113pp. doi:10.1063/1.2336998
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Dong, Bozhang, Chen, Jun-Da, Lin, Fan-Yi, Norman, Justin C., Bowers, John E., Grillot, Frédéric (2021) Dynamic and nonlinear properties of epitaxial quantum-dot lasers on silicon operating under long- and short-cavity feedback conditions for photonic integrated circuits. Physical Review A, 103 (3). doi:10.1103/physreva.103.033509
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Kim, HoSung, Lee, Seungchul, Ko, Young-Ho, Ahn, Joon Tae, Kim, Kap-Joong, Kim, Duk-Jun, Geum, Dae-Myeong, Han, Won Seok (2024) High-temperature and continuous wave-operation of all-MOCVD grown InAs/GaAs quantum dot laser diodes with highly strained layer and low temperature p-AlGaAs cladding layer. Journal of Alloys and Compounds, 983. 173823 doi:10.1016/j.jallcom.2024.173823
Stubenrauch, M., Stracke, G., Arsenijević, D., Strittmatter, A., Bimberg, D. (2014) 15 Gb/s index-coupled distributed-feedback lasers based on 1.3 Όm InGaAs quantum dots. Applied Physics Letters, 105 (1). 11103pp. doi:10.1063/1.4887063
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See Also

These are possibly similar items as determined by title/reference text matching only.

Song, Changkun; Yang, Jiawei; Rao, Mujie; Chen, Yingxin; Yu, Ying; Yu, Siyuan (2025) Tuning of charge state and wavelength in InAs/GaAs quantum dots through p-i-p+-i-n heterostructure engineering. Applied Physics Letters, 126 (17). doi:10.1063/5.0259814
Ding, Zhengqing, Cao, Juntian, Zhan, Kun, Chen, Yihang, Zhou, Lidan, Wang, Weiyuan, Tan, Hao, Yang, Chengao, Yu, Ying, Niu, Zhichuan, et al. (2024) High power GaSb-based distributed feedback laser with laterally coupled dielectric gratings at 1.95 ”m. Applied Physics Letters, 125 (20). doi:10.1063/5.0233108
Shi, Jin-Wei, Jiang, C.-H., Chen, K.-M., Yen, J.-L., Yang, Ying-Jay (2005) Single-mode vertical-cavity surface-emitting laser with ring-shaped light-emitting aperture. Applied Physics Letters, 87 (3). 31109pp. doi:10.1063/1.1997282
Chen, Shen-De, Chen, Ying-Ying, Lee, Si-Chen (2005) Transverse-electric-field-enhanced response in InAs∕AlGaAs∕GaAs quantum-dot infrared photodetectors. Applied Physics Letters, 86 (25). 253104pp. doi:10.1063/1.1929881
Selçuk, E., Silov, A. Yu., Nötzel, R. (2009) Single InAs quantum dot arrays and directed self-organization on patterned GaAs (311)B substrates. Applied Physics Letters, 94 (26). 263108pp. doi:10.1063/1.3167813
Liu, Hui-Yun, Xu, Bo, Wei, Yong-Qiang, Ding, Ding, Qian, Jia-Jun, Han, Qin, Liang, Ji-Ben, Wang, Zhan-Guo (2001) High-power and long-lifetime InAs/GaAs quantum-dot laser at 1080 nm. Applied Physics Letters, 79 (18). 2868-2870 doi:10.1063/1.1415416
Wang, Huolei, Yu, Hongyan, Zhou, Xuliang, Kan, Qiang, Yuan, Lijun, Chen, Weixi, Wang, Wei, Ding, Ying, Pan, Jiaoqing (2014) High-power InGaAs/GaAs quantum-well laser with enhanced broad spectrum of stimulated emission. Applied Physics Letters, 105 (14). 141101pp. doi:10.1063/1.4897436
O’Driscoll, I., Hutchings, M., Smowton, P. M., Blood, P. (2010) Many-body effects in InAs/GaAs quantum dot laser structures. Applied Physics Letters, 97 (14). 141102pp. doi:10.1063/1.3496011
Huang, Chia-Tze, Chen, Yu-Cheng, Lee, Si-Chen (2012) Improved photoresponse of InAs/GaAs quantum dot infrared photodetectors by using GaAs1−xSbx strain reducing layer. Applied Physics Letters, 100 (4). 43512pp. doi:10.1063/1.3679132
Lin, Shih-Yen, Tsai, Yau-Ren, Lee, Si-Chen (2001) High-performance InAs/GaAs quantum-dot infrared photodetectors with a single-sided Al0.3Ga0.7As blocking layer. Applied Physics Letters, 78 (18). 2784-2786 doi:10.1063/1.1365950
Ding, Yun-Yun, Lv, Zun-Ren, Zhang, Zhong-Kai, Yuan, Hui-Hong, Yang, Tao (2020) Single longitudinal mode GaAs-based quantum dot laser with refractive index perturbation. Applied Optics, 59. 1648pp. doi:10.1364/ao.383089
 
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