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Huang, Chia-Tze, Chen, Yu-Cheng, Lee, Si-Chen (2012) Improved photoresponse of InAs/GaAs quantum dot infrared photodetectors by using GaAs1−xSbx strain reducing layer. Applied Physics Letters, 100 (4). 43512pp. doi:10.1063/1.3679132

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Reference TypeJournal (article/letter/editorial)
TitleImproved photoresponse of InAs/GaAs quantum dot infrared photodetectors by using GaAs1−xSbx strain reducing layer
JournalApplied Physics Letters
AuthorsHuang, Chia-TzeAuthor
Chen, Yu-ChengAuthor
Lee, Si-ChenAuthor
Year2012 (January 23)Volume100
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.3679132Search in ResearchGate
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Mindat Ref. ID8604013Long-form Identifiermindat:1:5:8604013:0
GUID0
Full ReferenceHuang, Chia-Tze, Chen, Yu-Cheng, Lee, Si-Chen (2012) Improved photoresponse of InAs/GaAs quantum dot infrared photodetectors by using GaAs1−xSbx strain reducing layer. Applied Physics Letters, 100 (4). 43512pp. doi:10.1063/1.3679132
Plain TextHuang, Chia-Tze, Chen, Yu-Cheng, Lee, Si-Chen (2012) Improved photoresponse of InAs/GaAs quantum dot infrared photodetectors by using GaAs1−xSbx strain reducing layer. Applied Physics Letters, 100 (4). 43512pp. doi:10.1063/1.3679132
In(2012, January) Applied Physics Letters Vol. 100 (4) AIP Publishing

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Lin, Shih-Yen, Tsai, Yao-Jen, Lee, Si-Chen (2003) Transport characteristics of InAs/GaAs quantum-dot infrared photodetectors. Applied Physics Letters, 83 (4). 752-754 doi:10.1063/1.1594285
Chen, Shen-De, Chen, Ying-Ying, Lee, Si-Chen (2005) Transverse-electric-field-enhanced response in InAs∕AlGaAs∕GaAs quantum-dot infrared photodetectors. Applied Physics Letters, 86 (25). 253104pp. doi:10.1063/1.1929881
Lin, Shih-Yen, Tsai, Yau-Ren, Lee, Si-Chen (2001) High-performance InAs/GaAs quantum-dot infrared photodetectors with a single-sided Al0.3Ga0.7As blocking layer. Applied Physics Letters, 78 (18). 2784-2786 doi:10.1063/1.1365950
Kim, Eui-Tae, Chen, Zhonghui, Madhukar, Anupam (2001) Tailoring detection bands of InAs quantum-dot infrared photodetectors using InxGa1−xAs strain-relieving quantum wells. Applied Physics Letters, 79 (20). 3341-3343 doi:10.1063/1.1417513
Tang, Shiang-Feng, Lin, Shih-Yen, Lee, Si-Chen (2001) Near-room-temperature operation of an InAs/GaAs quantum-dot infrared photodetector. Applied Physics Letters, 78 (17). 2428-2430 doi:10.1063/1.1362201
Lin, Shih-Yen, Tsai, Yao-Jen, Lee, Si-Chen (2004) Effect of Silicon Dopant on the Performance of InAs/GaAs Quantum-Dot Infrared Photodetectors. Japanese Journal of Applied Physics, 43. doi:10.1143/jjap.43.l167
Chang, Wen-Hao, Liao, Yu-An, Hsu, Wei-Ting, Lee, Ming-Chih, Chiu, Pei-Chin, Chyi, Jen-Inn (2008) Carrier dynamics of type-II InAs∕GaAs quantum dots covered by a thin GaAs1−xSbx layer. Applied Physics Letters, 93 (3). 33107pp. doi:10.1063/1.2964191
Yeh, Nien-Tze, Liu, Wei-Sheng, Chen, Shu-Han, Chiu, Pe-Chin, Chyi, Jen-Inn (2002) InAs/GaAs quantum dot lasers with InGaP cladding layer grown by solid-source molecular-beam epitaxy. Applied Physics Letters, 80 (4). 535-537 doi:10.1063/1.1445269
Zhang, J.-Z., Galbraith, I. (2004) Intraband absorption for InAs/GaAs quantum dot infrared photodetectors. Applied Physics Letters, 84 (11). 1934-1936 doi:10.1063/1.1687459
Hakkarainen, T. V., Schramm, A., Tommila, J., Guina, M. (2012) The effect of InGaAs strain-reducing layer on the optical properties of InAs quantum dot chains grown on patterned GaAs(100). Journal of Applied Physics, 111 (1). 14306pp. doi:10.1063/1.3675271
Chen, Zhi-Hui, Hellström, S., Yu, Zhong-Yuan, Qiu, Min, Fu, Y. (2012) Time-resolved photocurrents in quantum well/dot infrared photodetectors with different optical coupling structures. Applied Physics Letters, 100 (4). 43502pp. doi:10.1063/1.3678637
 
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