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Zhang, J.-Z., Galbraith, I. (2004) Intraband absorption for InAs/GaAs quantum dot infrared photodetectors. Applied Physics Letters, 84 (11). 1934-1936 doi:10.1063/1.1687459

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Reference TypeJournal (article/letter/editorial)
TitleIntraband absorption for InAs/GaAs quantum dot infrared photodetectors
JournalApplied Physics Letters
AuthorsZhang, J.-Z.Author
Galbraith, I.Author
Year2004 (March 15)Volume84
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.1687459Search in ResearchGate
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Mindat Ref. ID8538076Long-form Identifiermindat:1:5:8538076:7
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Full ReferenceZhang, J.-Z., Galbraith, I. (2004) Intraband absorption for InAs/GaAs quantum dot infrared photodetectors. Applied Physics Letters, 84 (11). 1934-1936 doi:10.1063/1.1687459
Plain TextZhang, J.-Z., Galbraith, I. (2004) Intraband absorption for InAs/GaAs quantum dot infrared photodetectors. Applied Physics Letters, 84 (11). 1934-1936 doi:10.1063/1.1687459
In(2004, March) Applied Physics Letters Vol. 84 (11) AIP Publishing

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Zhang, J.-Z., Galbraith, I. (2004) Erratum: “Intraband absorption for InAs∕GaAs quantum dot infrared photodetectors” [Appl. Phys. Lett. 84, 1934 (2004)]. Applied Physics Letters, 85 (21). 5105 doi:10.1063/1.1827347
Kim, Eui-Tae, Madhukar, Anupam, Ye, Zhengmao, Campbell, Joe C. (2004) High detectivity InAs quantum dot infrared photodetectors. Applied Physics Letters, 84 (17). 3277-3279 doi:10.1063/1.1719259
Zhang, J.-Z., Galbraith, I. (2008) Intraband magneto-optical absorption in InAs/GaAs quantum dots: Orbital Zeeman splitting and the Thomas-Reiche-Kuhn sum rule. Physical Review B, 77 (20) doi:10.1103/physrevb.77.205319
Lin, Shih-Yen, Tsai, Yao-Jen, Lee, Si-Chen (2003) Transport characteristics of InAs/GaAs quantum-dot infrared photodetectors. Applied Physics Letters, 83 (4). 752-754 doi:10.1063/1.1594285
Chen, Shen-De, Chen, Ying-Ying, Lee, Si-Chen (2005) Transverse-electric-field-enhanced response in InAs∕AlGaAs∕GaAs quantum-dot infrared photodetectors. Applied Physics Letters, 86 (25). 253104pp. doi:10.1063/1.1929881
Wang, Z. M., Holmes, K., Mazur, Yu. I., Salamo, G. J. (2004) Fabrication of (In,Ga)As quantum-dot chains on GaAs(100). Applied Physics Letters, 84 (11). 1931-1933 doi:10.1063/1.1669064
Boucaud, P., Gill, K. S., Williams, J. B., Sherwin, M. S., Schoenfeld, W. V., Petroff, P. M. (2000) Saturation of THz-frequency intraband absorption in InAs/GaAs quantum dot molecules. Applied Physics Letters, 77 (4). 510-512 doi:10.1063/1.127027
Huang, Chia-Tze, Chen, Yu-Cheng, Lee, Si-Chen (2012) Improved photoresponse of InAs/GaAs quantum dot infrared photodetectors by using GaAs1−xSbx strain reducing layer. Applied Physics Letters, 100 (4). 43512pp. doi:10.1063/1.3679132
Lin, Shih-Yen, Tsai, Yau-Ren, Lee, Si-Chen (2001) High-performance InAs/GaAs quantum-dot infrared photodetectors with a single-sided Al0.3Ga0.7As blocking layer. Applied Physics Letters, 78 (18). 2784-2786 doi:10.1063/1.1365950
Sauvage, S., Boucaud, P., GĂ©rard, J.-M., Thierry-Mieg, V. (1998) Resonant excitation of intraband absorption in InAs/GaAs self-assembled quantum dots. Journal of Applied Physics, 84 (8). 4356-4362 doi:10.1063/1.368655
Stiff-Roberts, A. D., Chakrabarti, S., Pradhan, S., Kochman, B., Bhattacharya, P. (2002) Raster-scan imaging with normal-incidence, midinfrared InAs/GaAs quantum dot infrared photodetectors. Applied Physics Letters, 80 (18). 3265-3267 doi:10.1063/1.1476387
 
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