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Kim, Eui-Tae, Madhukar, Anupam, Ye, Zhengmao, Campbell, Joe C. (2004) High detectivity InAs quantum dot infrared photodetectors. Applied Physics Letters, 84 (17). 3277-3279 doi:10.1063/1.1719259

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Reference TypeJournal (article/letter/editorial)
TitleHigh detectivity InAs quantum dot infrared photodetectors
JournalApplied Physics Letters
AuthorsKim, Eui-TaeAuthor
Madhukar, AnupamAuthor
Ye, ZhengmaoAuthor
Campbell, Joe C.Author
Year2004 (April 26)Volume84
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.1719259Search in ResearchGate
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Mindat Ref. ID8538498Long-form Identifiermindat:1:5:8538498:5
GUID0
Full ReferenceKim, Eui-Tae, Madhukar, Anupam, Ye, Zhengmao, Campbell, Joe C. (2004) High detectivity InAs quantum dot infrared photodetectors. Applied Physics Letters, 84 (17). 3277-3279 doi:10.1063/1.1719259
Plain TextKim, Eui-Tae, Madhukar, Anupam, Ye, Zhengmao, Campbell, Joe C. (2004) High detectivity InAs quantum dot infrared photodetectors. Applied Physics Letters, 84 (17). 3277-3279 doi:10.1063/1.1719259
In(2004, April) Applied Physics Letters Vol. 84 (17) AIP Publishing

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Ye, Zhengmao, Campbell, Joe C., Chen, Zhonghui, Kim, Eui-Tae, Madhukar, Anupam (2003) Noise and photoconductive gain in InAs quantum-dot infrared photodetectors. Applied Physics Letters, 83 (6). 1234-1236 doi:10.1063/1.1597987
Ye, Zhengmao, Campbell, Joe C., Chen, Zhonghui, Kim, Eui-Tae, Madhukar, Anupam (2002) InAs quantum dot infrared photodetectors with In0.15Ga0.85As strain-relief cap layers. Journal of Applied Physics, 92 (12). 7462-7468 doi:10.1063/1.1517750
Ye, Zhengmao, Campbell, Joe C., Chen, Zhonghui, Kim, Eui-Tae, Madhukar, Anupam (2002) Voltage-controllable multiwavelength InAs quantum-dot infrared photodetectors for mid- and far-infrared detection. Journal of Applied Physics, 92 (7). 4141-4143 doi:10.1063/1.1504167
Kim, Eui-Tae, Chen, Zhonghui, Madhukar, Anupam (2001) Tailoring detection bands of InAs quantum-dot infrared photodetectors using InxGa1−xAs strain-relieving quantum wells. Applied Physics Letters, 79 (20). 3341-3343 doi:10.1063/1.1417513
Kim, Eui-Tae, Chen, Zhonghui, Madhukar, Anupam (2002) Selective manipulation of InAs quantum dot electronic states using a lateral potential confinement layer. Applied Physics Letters, 81 (18). 3473-3475 doi:10.1063/1.1517710
Chen, Zhonghui, Kim, Eui-Tae, Madhukar, Anupam (2002) Normal-incidence voltage-tunable middle- and long-wavelength infrared photoresponse in self-assembled InAs quantum dots. Applied Physics Letters, 80 (14). 2490-2492 doi:10.1063/1.1467974
Chen, Zhonghui, Kim, Eui-Tae, Madhukar, Anupam (2002) Intraband-transition-induced dipoles in self-assembled InAs/GaAs(001) quantum dots. Applied Physics Letters, 80 (15). 2770-2772 doi:10.1063/1.1468896
Chen, Zhonghui, Baklenov, O., Kim, E. T., Mukhametzhanov, I., Tie, J., Madhukar, A., Ye, Z., Campbell, J. C. (2001) Normal incidence InAs/AlxGa1−xAs quantum dot infrared photodetectors with undoped active region. Journal of Applied Physics, 89 (8). 4558-4563 doi:10.1063/1.1356430
Zhang, J.-Z., Galbraith, I. (2004) Intraband absorption for InAs/GaAs quantum dot infrared photodetectors. Applied Physics Letters, 84 (11). 1934-1936 doi:10.1063/1.1687459
Zhang, J.-Z., Galbraith, I. (2004) Erratum: “Intraband absorption for InAs∕GaAs quantum dot infrared photodetectors” [Appl. Phys. Lett. 84, 1934 (2004)]. Applied Physics Letters, 85 (21). 5105 doi:10.1063/1.1827347
Zhang, W., Lim, H., Taguchi, M., Tsao, S., Movaghar, B., Razeghi, M. (2005) High-detectivity InAs quantum-dot infrared photodetectors grown on InP by metal–organic chemical–vapor deposition. Applied Physics Letters, 86 (19). 191103pp. doi:10.1063/1.1923176
 
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