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Song, M.H., Lee, Y.H., Hahn, T.S., Oh, M.H., Yoon, K.H. (1996) Thickness effects of SiOxNy interlayer inserted between BaTiO3 insulating layer and ZnS:Mn phosphor layer in thin film electroluminescent devices. Journal of Crystal Growth, 167 (1). 157-164 doi:10.1016/0022-0248(96)00234-5

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Reference TypeJournal (article/letter/editorial)
TitleThickness effects of SiOxNy interlayer inserted between BaTiO3 insulating layer and ZnS:Mn phosphor layer in thin film electroluminescent devices
JournalJournal of Crystal Growth
AuthorsSong, M.H.Author
Lee, Y.H.Author
Hahn, T.S.Author
Oh, M.H.Author
Yoon, K.H.Author
Year1996 (September)Volume167
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(96)00234-5Search in ResearchGate
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Mindat Ref. ID2829815Long-form Identifiermindat:1:5:2829815:3
GUID0
Full ReferenceSong, M.H., Lee, Y.H., Hahn, T.S., Oh, M.H., Yoon, K.H. (1996) Thickness effects of SiOxNy interlayer inserted between BaTiO3 insulating layer and ZnS:Mn phosphor layer in thin film electroluminescent devices. Journal of Crystal Growth, 167 (1). 157-164 doi:10.1016/0022-0248(96)00234-5
Plain TextSong, M.H., Lee, Y.H., Hahn, T.S., Oh, M.H., Yoon, K.H. (1996) Thickness effects of SiOxNy interlayer inserted between BaTiO3 insulating layer and ZnS:Mn phosphor layer in thin film electroluminescent devices. Journal of Crystal Growth, 167 (1). 157-164 doi:10.1016/0022-0248(96)00234-5
In(1996, September) Journal of Crystal Growth Vol. 167 (1) Elsevier BV

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Lee, Y.H., Kim, D.H., Ju, B.K., Yeom, T.H., S Hahn, T., Oh, M.H., Choh, S.H. (1995) Effect of multilayered SrSî—¸SrS: Ceî—¸SrS phosphor prepared by multi-source deposition method on the thin film electroluminescent devices. Journal of Crystal Growth, 147 (3). 326-332 doi:10.1016/0022-0248(94)00662-8
Kina, Hideki, Yamada, Yoji, Maruta, Yukihiro, Tamura, Yukihisa (1996) ZnS:Mn thin-film electroluminescent devices prepared by metalorganic chemical vapor deposition. Journal of Crystal Growth, 169 (1). 33-39 doi:10.1016/0022-0248(96)00321-1
Miyata, T., Minami, T., Takata, S. (1992) Influence of Mn doping conditions on electroluminescent characteristics of ZnS:Mn thin-film electroluminescent (TFEL) devices using insulating ceramic. Journal of Crystal Growth, 117 (1). 1021-1025 doi:10.1016/0022-0248(92)90905-x
To¨rnqvist, R. (1982) Saturation of the Mn2+ emission in AC ZnS:Mn electroluminescent thin film devices. Journal of Crystal Growth, 59 (1). 399-402 doi:10.1016/0022-0248(82)90358-x
Garrett, M.H., Mnushkina, I. (1996) Techniques for top-seeded solution growth of BaTiO3. Journal of Crystal Growth, 166 (1). 550-557 doi:10.1016/0022-0248(95)00919-1
To¨rnqvist, R., Korpela, S. (1982) On the aging of ZnS:Mn electroluminescent thin films grown by the atomic layer epitaxy technique. Journal of Crystal Growth, 59 (1). 395-398 doi:10.1016/0022-0248(82)90357-8
Tanaka, Shosaku (1990) Thin-film electroluminescent devices using CaS and SrS. Journal of Crystal Growth, 101 (1). 958-966 doi:10.1016/0022-0248(90)91114-6
Ando, Masahiko, Ono, Yoshimasa A. (1992) Temperature effects in the emission characteristics of CaS:Eu thin-film electroluminescent devices. Journal of Crystal Growth, 117 (1). 969-974 doi:10.1016/0022-0248(92)90894-o
Venghaus, H. (1982) Current and light generation in UV-irradiated AC thin film electroluminescent devices. Journal of Crystal Growth, 59 (1). 403-408 doi:10.1016/0022-0248(82)90359-1
Jahrling, Katia, Tait, Stephen (1996) Measurements of the evolution of porosity in a mushy layer. Journal of Crystal Growth, 167 (1). 285-291 doi:10.1016/0022-0248(96)00241-2
Krasnov, Alex N., Bajcar, Robert C., Hofstra, Peter G. (1998) Threshold voltage trends in ZnS:Mn-based alternating-current thin-film electroluminescent devices: role of native defects. Journal of Crystal Growth, 194 (1). 53-60 doi:10.1016/s0022-0248(98)00616-2
 
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