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Kina, Hideki, Yamada, Yoji, Maruta, Yukihiro, Tamura, Yukihisa (1996) ZnS:Mn thin-film electroluminescent devices prepared by metalorganic chemical vapor deposition. Journal of Crystal Growth, 169 (1). 33-39 doi:10.1016/0022-0248(96)00321-1

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Reference TypeJournal (article/letter/editorial)
TitleZnS:Mn thin-film electroluminescent devices prepared by metalorganic chemical vapor deposition
JournalJournal of Crystal Growth
AuthorsKina, HidekiAuthor
Yamada, YojiAuthor
Maruta, YukihiroAuthor
Tamura, YukihisaAuthor
Year1996 (November)Volume169
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(96)00321-1Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID2830534Long-form Identifiermindat:1:5:2830534:7
GUID0
Full ReferenceKina, Hideki, Yamada, Yoji, Maruta, Yukihiro, Tamura, Yukihisa (1996) ZnS:Mn thin-film electroluminescent devices prepared by metalorganic chemical vapor deposition. Journal of Crystal Growth, 169 (1). 33-39 doi:10.1016/0022-0248(96)00321-1
Plain TextKina, Hideki, Yamada, Yoji, Maruta, Yukihiro, Tamura, Yukihisa (1996) ZnS:Mn thin-film electroluminescent devices prepared by metalorganic chemical vapor deposition. Journal of Crystal Growth, 169 (1). 33-39 doi:10.1016/0022-0248(96)00321-1
In(1996, November) Journal of Crystal Growth Vol. 169 (1) Elsevier BV

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Kina, Hideki, Tamura, Yukihisa, Yamada, Yoji, Maruta, Yukihiro (1997) The Characteristics of SrS:Ce Thin Film Electroluminescent Devices. Japanese Journal of Applied Physics, 36. 150-154 doi:10.1143/jjap.36.150
To¨rnqvist, R. (1982) Saturation of the Mn2+ emission in AC ZnS:Mn electroluminescent thin film devices. Journal of Crystal Growth, 59 (1). 399-402 doi:10.1016/0022-0248(82)90358-x
Song, M.H., Lee, Y.H., Hahn, T.S., Oh, M.H., Yoon, K.H. (1996) Thickness effects of SiOxNy interlayer inserted between BaTiO3 insulating layer and ZnS:Mn phosphor layer in thin film electroluminescent devices. Journal of Crystal Growth, 167 (1). 157-164 doi:10.1016/0022-0248(96)00234-5
Zeng, J.M., Wang, H., Shang, S.X., Wang, Z., Wang, M. (1996) Preparation and characterization of epitaxial MgO thin film by atmospheric-pressure metalorganic chemical vapor deposition. Journal of Crystal Growth, 169 (3). 474-479 doi:10.1016/s0022-0248(96)00411-3
Hirabayashi, Katsuhiko, Kozawaguchi, Haruki (1986) Memory Effect in AC Thin Film ZnS:Mn Electroluminescent Devices Prepared by Metal Organic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 25. doi:10.1143/jjap.25.l379
Miyata, T., Minami, T., Takata, S. (1992) Influence of Mn doping conditions on electroluminescent characteristics of ZnS:Mn thin-film electroluminescent (TFEL) devices using insulating ceramic. Journal of Crystal Growth, 117 (1). 1021-1025 doi:10.1016/0022-0248(92)90905-x
Ito, Hiroshi, Kurishima, Kenji (1996) Influence of gallium sources on carbon incorporation efficiency into InGaAs grown by metalorganic chemical vapor deposition. Journal of Crystal Growth, 165 (3). 215-221 doi:10.1016/0022-0248(96)00174-1
Kaiser, D.L., Vaudin, M.D., Gillen, G., Hwang, C.-S., Robins, L.H., Rotter, L.D. (1994) Growth and characterization of barium titanate thin films prepared by metalorganic chemical vapor deposition. Journal of Crystal Growth, 137 (1). 136-140 doi:10.1016/0022-0248(94)91261-0
Soga, Tetsuo, Jimbo, Takashi, Umeno, Masayoshi (1996) Initial stage of GaPSi heteroepitaxial growth by metalorganic chemical vapor deposition. Journal of Crystal Growth, 163 (1). 165-170 doi:10.1016/0022-0248(95)01046-7
Tanaka, Shosaku (1990) Thin-film electroluminescent devices using CaS and SrS. Journal of Crystal Growth, 101 (1). 958-966 doi:10.1016/0022-0248(90)91114-6
Akiyama, Yasunobu, Sato, Tsuneyuki, Imaishi, Nobuyuki (1995) Reaction analysis for ZrO2 and Y2O3 thin film growth by low-pressure metalorganic chemical vapor deposition using β-diketonate complexes. Journal of Crystal Growth, 147 (1). 130-146 doi:10.1016/0022-0248(94)00623-7
 
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