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Ambacher, O., Dimitrov, R., Lentz, D., Metzger, T., Rieger, W., Stutzmann, M. (1996) Growth of by low-pressure MOCVD using triethylgallium and tritertbutylaluminium. Journal of Crystal Growth, 167 (1). 1-7 doi:10.1016/0022-0248(96)00244-8

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Reference TypeJournal (article/letter/editorial)
TitleGrowth of by low-pressure MOCVD using triethylgallium and tritertbutylaluminium
JournalJournal of Crystal Growth
AuthorsAmbacher, O.Author
Dimitrov, R.Author
Lentz, D.Author
Metzger, T.Author
Rieger, W.Author
Stutzmann, M.Author
Year1996 (September)Volume167
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(96)00244-8Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID2829858Long-form Identifiermindat:1:5:2829858:8
GUID0
Full ReferenceAmbacher, O., Dimitrov, R., Lentz, D., Metzger, T., Rieger, W., Stutzmann, M. (1996) Growth of by low-pressure MOCVD using triethylgallium and tritertbutylaluminium. Journal of Crystal Growth, 167 (1). 1-7 doi:10.1016/0022-0248(96)00244-8
Plain TextAmbacher, O., Dimitrov, R., Lentz, D., Metzger, T., Rieger, W., Stutzmann, M. (1996) Growth of by low-pressure MOCVD using triethylgallium and tritertbutylaluminium. Journal of Crystal Growth, 167 (1). 1-7 doi:10.1016/0022-0248(96)00244-8
In(1996, September) Journal of Crystal Growth Vol. 167 (1) Elsevier BV

See Also

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Ambacher, O., Dimitrov, R., Lentz, D., Metzger, T., Rieger, W., Stutzmann, M. (1997) Growth of and AlGaN by MOCVD using triethylgallium and tritertiarybutylaluminium. Journal of Crystal Growth, 170 (1). 335-339 doi:10.1016/s0022-0248(96)00623-9
Rieger, W., Metzger, T., Angerer, H., Dimitrov, R., Ambacher, O., Stutzmann, M. (1996) Influence of substrateā€induced biaxial compressive stress on the optical properties of thin GaN films. Applied Physics Letters, 68 (7). 970-972 doi:10.1063/1.116115
Obretenov, W., Dimitrov, N., Popov, A. (1996) Monte Carlo simulation of underpotential deposition in the system. Journal of Crystal Growth, 167 (1). 253-259 doi:10.1016/0022-0248(96)00240-0
Nataf, G., Leroux, M., LaĆ¼gt, S.M., Gibart, P. (1996) Selective growth of GaAs and Al0.35Ga0.65As on GaAs patterned substrates by HCl assisted low pressure metalorganic vapour phase epitaxy. Journal of Crystal Growth, 165 (1). 1-7 doi:10.1016/0022-0248(96)00172-8
Ambacher, O., Angerer, H., Dimitrov, R., Rieger, W., Stutzmann, M., Dollinger, G., Bergmaier, A. (1997) Hydrogen in Gallium Nitride Grown by MOCVD. physica status solidi (a), 159 (1). 105-119 doi:10.1002/1521-396x(199701)159:1<105::aid-pssa105>3.0.co;2-h
Smith, F.T.J. (1984) Epitaxial growth of GaAs by low-pressure MOCVD. Journal of Crystal Growth, 67 (3). 573-578 doi:10.1016/0022-0248(84)90053-8
Rieger, W., Dimitrov, R., Brunner, D., Rohrer, E., Ambacher, O., Stutzmann, M. (1996) Defect-related optical transitions in GaN. Physical Review B, 54 (24) 17596-17602 doi:10.1103/physrevb.54.17596
Cros, A., Dimitrov, R., Angerer, H., Ambacher, O., Stutzmann, M., Christiansen, S., Albrecht, M., Strunk, H.P. (1997) Influence of magnesium doping on the structural properties of GaN layers. Journal of Crystal Growth, 181 (3). 197-203 doi:10.1016/s0022-0248(97)00288-1
Yamada, Yoichi, Taguchi, Tsunemasa (1990) Epitaxial growth and photoluminescence characterization of ZnSe: Na films by low-pressure MOCVD. Journal of Crystal Growth, 99 (1). 408-412 doi:10.1016/0022-0248(90)90553-w
Yamasaki, Y., Komatsu, H., Tsunekawa, Y., Asaka, T., Iwano, H., Ohshima, H. (1988) Selectively embedded epitaxial growth of ZnSe by low-pressure MOCVD using dimethylzinc and dimethylselenium. Journal of Crystal Growth, 93 (1). 673-678 doi:10.1016/0022-0248(88)90602-1
(1996) Editorial Board. Journal of Crystal Growth, 167 (1). doi:10.1016/s0022-0248(96)90321-8
 
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