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Cros, A., Dimitrov, R., Angerer, H., Ambacher, O., Stutzmann, M., Christiansen, S., Albrecht, M., Strunk, H.P. (1997) Influence of magnesium doping on the structural properties of GaN layers. Journal of Crystal Growth, 181 (3). 197-203 doi:10.1016/s0022-0248(97)00288-1

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Reference TypeJournal (article/letter/editorial)
TitleInfluence of magnesium doping on the structural properties of GaN layers
JournalJournal of Crystal Growth
AuthorsCros, A.Author
Dimitrov, R.Author
Angerer, H.Author
Ambacher, O.Author
Stutzmann, M.Author
Christiansen, S.Author
Albrecht, M.Author
Strunk, H.P.Author
Year1997 (November)Volume181
Issue3
PublisherElsevier BV
DOIdoi:10.1016/s0022-0248(97)00288-1Search in ResearchGate
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Mindat Ref. ID2836639Long-form Identifiermindat:1:5:2836639:3
GUID0
Full ReferenceCros, A., Dimitrov, R., Angerer, H., Ambacher, O., Stutzmann, M., Christiansen, S., Albrecht, M., Strunk, H.P. (1997) Influence of magnesium doping on the structural properties of GaN layers. Journal of Crystal Growth, 181 (3). 197-203 doi:10.1016/s0022-0248(97)00288-1
Plain TextCros, A., Dimitrov, R., Angerer, H., Ambacher, O., Stutzmann, M., Christiansen, S., Albrecht, M., Strunk, H.P. (1997) Influence of magnesium doping on the structural properties of GaN layers. Journal of Crystal Growth, 181 (3). 197-203 doi:10.1016/s0022-0248(97)00288-1
In(1997, November) Journal of Crystal Growth Vol. 181 (3) Elsevier BV

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Schmitt, J., Troffer, T., Christiansen, K., Schadt, M., Christiansen, S., Helbig, R., Pensl, G., Strunk, H.P. (1997) Characterization of homoepitaxial SiC layers. Journal of Crystal Growth, 175. 528-531 doi:10.1016/s0022-0248(96)00994-3
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Rieger, W., Metzger, T., Angerer, H., Dimitrov, R., Ambacher, O., Stutzmann, M. (1996) Influence of substrate‐induced biaxial compressive stress on the optical properties of thin GaN films. Applied Physics Letters, 68 (7). 970-972 doi:10.1063/1.116115
Albrecht, M., Cremades, A., Krinke, J., Christiansen, S., Ambacher, O., Piqueras, J., Strunk, H.P., Stutzmann, M. (1999) Carrier Recombination at Screw Dislocations in n-Type AlGaN Layers. physica status solidi (b), 216 (1). 409-414 doi:10.1002/(sici)1521-3951(199911)216:1<409::aid-pssb409>3.0.co;2-k
Kelly, M. K., Ambacher, O., Dahlheimer, B., Groos, G., Dimitrov, R., Angerer, H., Stutzmann, M. (1996) Optical patterning of GaN films. Applied Physics Letters, 69 (12). 1749-1751 doi:10.1063/1.117473
Metzger, T., Höpler, R., Born, E., Ambacher, O., Stutzmann, M., Stömmer, R., Schuster, M., Göbel, H., Christiansen, S., Albrecht, M., Strunk, H. P. (1998) Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry. Philosophical Magazine A, 77 (4). 1013-1025 doi:10.1080/01418619808221225
Becker, M., Christiansen, S., Albrecht, M., Strunk, H.P., Wawra, H. (2008) Energetic and kinetic aspects of the growth of pseudomorphic SiGe islands. Journal of Crystal Growth, 310 (14). 3261-3267 doi:10.1016/j.jcrysgro.2008.03.029
Dorsch, W., Steiner, B., Albrecht, M., Strunk, H.P., Wawra, H., Wagner, G. (1998) The transition from ripples to islands in strained heteroepitaxial growth under low driving forces. Journal of Crystal Growth, 183 (3). 305-310 doi:10.1016/s0022-0248(97)00430-2
Albrecht, M., Christiansen, S., Michler, J., Strunk, H.P., Hansson, P.O., Bauser, E. (1996) Locally varying chemical potential and growth surface profile: a case study on solution grown. Journal of Crystal Growth, 167 (1). 24-31 doi:10.1016/0022-0248(96)00227-8
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