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Sokolov, N.S., Alvarez, J.C., Gastev, S.V., Shusterman, Yu.V., Takahashi, I., Itoh, Y., Harada, J., Overney, R.M. (1996) High quality CaF2 layers on Si(111) with type-A epitaxial relation at the interface. Journal of Crystal Growth, 169 (1). 40-50 doi:10.1016/0022-0248(96)00346-6

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Reference TypeJournal (article/letter/editorial)
TitleHigh quality CaF2 layers on Si(111) with type-A epitaxial relation at the interface
JournalJournal of Crystal Growth
AuthorsSokolov, N.S.Author
Alvarez, J.C.Author
Gastev, S.V.Author
Shusterman, Yu.V.Author
Takahashi, I.Author
Itoh, Y.Author
Harada, J.Author
Overney, R.M.Author
Year1996 (November)Volume169
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(96)00346-6Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID2830568Long-form Identifiermindat:1:5:2830568:4
GUID0
Full ReferenceSokolov, N.S., Alvarez, J.C., Gastev, S.V., Shusterman, Yu.V., Takahashi, I., Itoh, Y., Harada, J., Overney, R.M. (1996) High quality CaF2 layers on Si(111) with type-A epitaxial relation at the interface. Journal of Crystal Growth, 169 (1). 40-50 doi:10.1016/0022-0248(96)00346-6
Plain TextSokolov, N.S., Alvarez, J.C., Gastev, S.V., Shusterman, Yu.V., Takahashi, I., Itoh, Y., Harada, J., Overney, R.M. (1996) High quality CaF2 layers on Si(111) with type-A epitaxial relation at the interface. Journal of Crystal Growth, 169 (1). 40-50 doi:10.1016/0022-0248(96)00346-6
In(1996, November) Journal of Crystal Growth Vol. 169 (1) Elsevier BV

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Sokolov, N.S., Alvarez, J.C., Shusterman, Yu.V., Yakovlev, N.L., Overney, R.M., Itoh, Y., Takahashi, I., Harada, J. (1996) Structural transformations at interfaces. Applied Surface Science, 104. 402-408 doi:10.1016/s0169-4332(96)00178-x
Harada, J., Takahashi, I., Itoh, Y., Sokolov, N.S., Yakovlev, N.L., Shusterman, Y., Alvarez, J.C. (1996) X-ray scattering from surfaces and interfaces and its application to the characterization of CaF2Si(111) interfaces. Journal of Crystal Growth, 163 (1). 31-38 doi:10.1016/0022-0248(95)01035-1
Izumi, A., Tsutsui, K., Sokolov, N.S., Faleev, N.N., Gastev, S.V., Novikov, S.V., Yakovlev, N.L. (1995) High-quality CdF2 layer growth on CaF2/Si(111). Journal of Crystal Growth, 150. 1115-1118 doi:10.1016/0022-0248(95)80112-p
Itoh, Y., Takahashi, I., Ichimiya, A., Harada, J., Sokolov, N.S. (1996) Structure of long interface. Journal of Crystal Growth, 166 (1). 61-66 doi:10.1016/0022-0248(95)00517-x
Harada, J., Itoh, Y., Shimura, T., Takahashi, I., Alvarez, J.C., Sokolov, N.S. (1994) X-ray crystal truncation rod scattering from MBE grown (CaF2-SrF2)/Si(111) superlattices. Applied Surface Science, 75. 263-268 doi:10.1016/0169-4332(94)90169-4
Sokolov, N.S, Gastev, S.V, Khilko, A.Yu, Kyutt, R.N, Suturin, S.M, Zamoryanskaya, M.V (1999) CdF2–CaF2 superlattices on Si(111): MBE growth, structural and luminescence studies. Journal of Crystal Growth, 201. 1053-1056 doi:10.1016/s0022-0248(98)01515-2
Kaveev, A.K, Kyutt, R.N, Moisseeva, M.M, Schowalter, L.J, Shusterman, Yu.V, Sokolov, N.S, Suturin, S.M, Yakovlev, N.L (1999) Molecular beam epitaxy and characterization of CdF2 layers on CaF2(111). Journal of Crystal Growth, 201. 1105-1108 doi:10.1016/s0022-0248(98)01536-x
Lee, B.C., Khilko, A.Yu., Shusterman, Yu.V., Yakovlev, N.L., Sokolov, N.S., Kyutt, R.N., Suturin, S.M., Schowalter, L.J. (1998) Structural and electrical characterization of epitaxial CdF2 layers grown on Si(111) and CaF2(111) substrates. Applied Surface Science, 123. 590-594 doi:10.1016/s0169-4332(97)00574-6
Shimura, T., Misaki, H., Umeno, M., Takahashi, I., Harada, J. (1996) X-ray diffraction evidence for the existence of epitaxial microcrystallites in thermally oxidized SiO2 thin films on Si(111) surfaces. Journal of Crystal Growth, 166 (1). 786-791 doi:10.1016/0022-0248(95)00496-3
Kiselev, A.N., Velichko, A.A., Okomelchenko, I.A. (1993) High-resolution electron microscopy of epitaxial layers and interfaces in the CaF2/Si(100) and CaF2/Si/CaF2/Si(100) heterosystems. Journal of Crystal Growth, 129 (1). 163-172 doi:10.1016/0022-0248(93)90445-3
Schowalter, L.J, Rojo, J.C, Slack, G.A, Shusterman, Y, Wang, R, Bhat, I, Arunmozhi, G (2000) Epitaxial growth of AlN and Al0.5Ga0.5N layers on aluminum nitride substrates. Journal of Crystal Growth, 211 (1). 78-81 doi:10.1016/s0022-0248(99)00778-2
 
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