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Saito, Hisao, Makimoto, Toshiki, Kobayashi, Naoki (1997) Photoluminescence characteristics of nitrogen atomic-layer-doped GaAs grown by MOVPE. Journal of Crystal Growth, 170 (1). 372-376 doi:10.1016/s0022-0248(96)00523-4

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Reference TypeJournal (article/letter/editorial)
TitlePhotoluminescence characteristics of nitrogen atomic-layer-doped GaAs grown by MOVPE
JournalJournal of Crystal Growth
AuthorsSaito, HisaoAuthor
Makimoto, ToshikiAuthor
Kobayashi, NaokiAuthor
Year1997 (January)Volume170
Issue1
PublisherElsevier BV
DOIdoi:10.1016/s0022-0248(96)00523-4Search in ResearchGate
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Mindat Ref. ID2831202Long-form Identifiermindat:1:5:2831202:8
GUID0
Full ReferenceSaito, Hisao, Makimoto, Toshiki, Kobayashi, Naoki (1997) Photoluminescence characteristics of nitrogen atomic-layer-doped GaAs grown by MOVPE. Journal of Crystal Growth, 170 (1). 372-376 doi:10.1016/s0022-0248(96)00523-4
Plain TextSaito, Hisao, Makimoto, Toshiki, Kobayashi, Naoki (1997) Photoluminescence characteristics of nitrogen atomic-layer-doped GaAs grown by MOVPE. Journal of Crystal Growth, 170 (1). 372-376 doi:10.1016/s0022-0248(96)00523-4
In(1997, January) Journal of Crystal Growth Vol. 170 (1) Elsevier BV

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Saito, Hisao, Makimoto, Toshiki, Kobayashi, Naoki (1998) MOVPE growth of strained InGaAsN/GaAs quantum wells. Journal of Crystal Growth, 195 (1). 416-420 doi:10.1016/s0022-0248(98)00666-6
Makimoto, Toshiki, Saito, Hisao, Kobayashi, Naoki (1997) Origin of Nitrogen-Pair Luminescence in GaAs Studied by Nitrogen Atomic-Layer-Doping in MOVPE. Japanese Journal of Applied Physics, 36. 1694-1697 doi:10.1143/jjap.36.1694
Kumakura, Kazuhide, Makimoto, Toshiki, Kobayashi, Naoki (2000) High hole concentrations in Mg-doped InGaN grown by MOVPE. Journal of Crystal Growth, 221 (1). 267-270 doi:10.1016/s0022-0248(00)00697-7
Kasu, Makoto, Makimoto, Toshiki, Kobayashi, Naoki (1997) Nanometer-scale selective-area GaAs growth on nitrogen-passivated surfaces using STM and MOMBE. Journal of Crystal Growth, 173 (3). 589-591 doi:10.1016/s0022-0248(96)01096-2
Makimoto, Toshiki, Kobayashi, Naoki (1995) Sharp photoluminescence lines from nitrogen atomic‐layer‐doped GaAs. Applied Physics Letters, 67 (5). 688-690 doi:10.1063/1.115204
Li, Jiang, Kuech, T.F. (1997) Surface morphology of carbon-doped GaAs grown by MOVPE. Journal of Crystal Growth, 170 (1). 292-296 doi:10.1016/s0022-0248(96)00589-1
Saito, Hisao, Makimoto, Toshiki, Kobayashi, Naoki (1996) Nitrogen Atomic-Layer-Doping on Ga-Terminated and Misoriented GaAs Surfaces by Metalorganic Vapor Phase Epitaxy Using Dimethylhydrazine. Japanese Journal of Applied Physics, 35. doi:10.1143/jjap.35.l1644
Makimoto, Toshiki, Kobayashi, Naoki (1996) Extremely Sharp Photoluminescence Lines from Nitrogen Atomic-Layer-Doped AlGaAs/GaAs Single Quantum Wells. Japanese Journal of Applied Physics, 35. 1299-1301 doi:10.1143/jjap.35.1299
Kobayashi, Naoki, Kobayashi, Yasuyuki, Uwai, Kunihiko (1997) Chemical trend observed in anisotropic surface reflectance spectra of MOVPE by surface photoabsorption. Journal of Crystal Growth, 170 (1). 225-229 doi:10.1016/s0022-0248(96)00520-9
Hjelt, Kari, Tuomi, Turkka (1997) Photoluminescence and electrical properties of MOVPE-grown zinc-doped gallium antimonide on gallium arsenide. Journal of Crystal Growth, 170 (1). 794-798 doi:10.1016/s0022-0248(96)00543-x
Kobayashi, Naoki, Makimoto, Toshiki, Horikoshi, Yoshiji (1987) Abruptp‐type doping profile of carbon atomic layer doped GaAs grown by flow‐rate modulation epitaxy. Applied Physics Letters, 50 (20). 1435-1437 doi:10.1063/1.97846
 
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