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(1997, January) Journal of Crystal Growth Vol. 170 (1) Elsevier BV

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Reference TypeJournal (issue)
JournalJournal of Crystal Growth
Year1997 (January)Volume170
Issue1
PublisherElsevier BV
Mindat Ref. ID2831087Long-form Identifiermindat:1:5:2831087:1
GUID0
Full Reference(1997, January) Journal of Crystal Growth Vol. 170 (1) Elsevier BV
Plain Text(1997, January) Journal of Crystal Growth Vol. 170 (1) Elsevier BV
In(1997) Journal of Crystal Growth Vol. 170. Elsevier BV

Contains

Mullin, J.B., Nelson, A.W. (1997) Preface. Journal of Crystal Growth, 170 (1). doi:10.1016/s0022-0248(97)80020-6
(1997) Editorial Board. Journal of Crystal Growth, 170 (1). doi:10.1016/s0022-0248(97)90089-0
Moon, R.L. (1997) MOVPE: is there any other technology for optoelectronics?. Journal of Crystal Growth, 170 (1). 1-10 doi:10.1016/s0022-0248(96)00731-2
Nakamura, Shuji (1997) First III–V-nitride-based violet laser diodes. Journal of Crystal Growth, 170 (1). 11-15 doi:10.1016/s0022-0248(96)00503-9
Ando, Hideyasu (1997) Recent progress in multi-wafer CBE systems. Journal of Crystal Growth, 170 (1). 16-22 doi:10.1016/s0022-0248(96)00654-9
O'Brien, P., Malik, M.A., Chunggaze, M., Trindade, T., Walsh, J.R., Jones, A.C. (1997) Precursor chemistry: remaining challenges and some novel approaches. Journal of Crystal Growth, 170 (1). 23-29 doi:10.1016/s0022-0248(96)00657-4
Heuken, M., Söllner, J., Taudt, W., Lampe, S., Hamadeh, H. (1997) Metalorganic chemical vapor epitaxy and doping of ZnMgSSe heterostructures for blue emitting devices. Journal of Crystal Growth, 170 (1). 30-38 doi:10.1016/s0022-0248(96)00525-8
Seifert, Werner, Carlsson, Niclas, Johansson, Jonas, Pistol, Mats-Erik, Samuelson, Lars (1997) In situ growth of nano-structures by metal-organic vapour phase epitaxy. Journal of Crystal Growth, 170 (1). 39-46 doi:10.1016/s0022-0248(96)00518-0
Halliwell, M.A.G. (1997) X-ray diffraction solutions to heteroepitaxial growth problems. Journal of Crystal Growth, 170 (1). 47-54 doi:10.1016/s0022-0248(96)00648-3
Wang, C.A., Salim, S., Jensen, K.F., Jones, A.C. (1997) Characteristics of GaSb growth using various gallium and antimony precursors. Journal of Crystal Growth, 170 (1). 55-60 doi:10.1016/s0022-0248(96)00580-5
Mizuno, Yoshichika, Uekusa, Shin-ichiro, Okabe, Hideyuki (1997) Hydrodynamic description of epitaxial film growth in a horizontal reactor. Journal of Crystal Growth, 170 (1). 61-65 doi:10.1016/s0022-0248(96)00566-0
Bergunde, T., Dauelsberg, M., Kadinski, L., Makarov, Yu.N., Weyers, M., Schmitz, D., Strauch, G., Jürgensen, H. (1997) Heat transfer and mass transport in a multiwafer MOVPE reactor: modelling and experimental studies. Journal of Crystal Growth, 170 (1). 66-71 doi:10.1016/s0022-0248(96)00551-9
Theodoropoulos, C., Ingle, N.K., Mountziaris, T.J. (1997) Computational studies of the transient behavior of horizontal MOVPE reactors. Journal of Crystal Growth, 170 (1). 72-76 doi:10.1016/s0022-0248(96)00637-9
Weyburne, David W., Ahern, Brian S. (1997) Design and operating considerations for a water-cooled close-spaced reactant injector in a production scale MOCVD reactor. Journal of Crystal Growth, 170 (1). 77-82 doi:10.1016/s0022-0248(96)00617-3
Zhang, X., Moerman, I., Sys, C., Demeester, P., Crawley, J.A., Thrush, E.J. (1997) Highly uniform and structures grown in a multiwafer vertical rotating susceptor MOVPE reactor. Journal of Crystal Growth, 170 (1). 83-87 doi:10.1016/s0022-0248(96)00603-3
Arai, Takayuki, Hidaka, Junichi, Tokunaga, Hiroki, Matsumoto, Koh (1997) Highly uniform growth in a low-pressure MOVPE multiple wafer system. Journal of Crystal Growth, 170 (1). 88-91 doi:10.1016/s0022-0248(96)00609-4
Thompson, A.G., Stall, R.A., Kroll, W., Armour, E., Beckham, C., Zawadzki, P., Aina, L., Siepel, K. (1997) Large scale manufacturing of compound semiconductors by MOVPE. Journal of Crystal Growth, 170 (1). 92-96 doi:10.1016/s0022-0248(96)00552-0
Beccard, R., Lengeling, G., Schmitz, D., Gigase, Y., Jürgensen, H. (1997) Replacement of hydrides by TBAs and TBP for the growth of various III–V materials in production scale MOVPE reactors. Journal of Crystal Growth, 170 (1). 97-102 doi:10.1016/s0022-0248(96)00625-2
Hollfelder, M., Hon, S., Setzer, B., Schimpf, K., Horstmann, M., Schäpers, Th., Schmitz, D., Hardtdegen, H., Lüth, H. (1997) Demonstration of the N2 carrier process for LP-MOVPE of. Journal of Crystal Growth, 170 (1). 103-108 doi:10.1016/s0022-0248(96)00545-3
Roehle, H., Schroeter-Janssen, H., Kaiser, R. (1997) Large- and selective-area LP-MOVPE growth of InGaAsP-based bulk and QW layers under nitrogen atmosphere. Journal of Crystal Growth, 170 (1). 109-112 doi:10.1016/s0022-0248(96)00508-8
Franke, D., Roehle, H. (1997) Highly reproducible and defect-free MOVPE overgrowth of InGaAsP-based DFB gratings. Journal of Crystal Growth, 170 (1). 113-116 doi:10.1016/s0022-0248(96)00548-9
Wiedemann, P., Laube, G., Weber, J., Lach, E. (1997) MOVPE growth of ternary and quaternary tensile strained MQW structures for polarization insensitive devices. Journal of Crystal Growth, 170 (1). 117-121 doi:10.1016/s0022-0248(96)00542-8
Silfvenius, Christofer, Stålnacke, Björn, Landgren, Gunnar (1997) MOVPE growth of strain-compensated 1300 nm In1−Ga As P1− quantum well structures. Journal of Crystal Growth, 170 (1). 122-126 doi:10.1016/s0022-0248(96)00583-0
Carlsson, N., Anand, S., Carlsson, S.-B., Gustafson, B., Omling, P., Ramvall, P., Samuelson, L., Seifert, W., Wang, Q. (1997) MOVPE growth of and heterostructures for electronic transport applications. Journal of Crystal Growth, 170 (1). 127-131 doi:10.1016/s0022-0248(96)00519-2
Wood, A.K., Thompson, J., Carr, N., Moseley, A.J., Bromley, P.A., Kearley, M.Q., Martin, R.W., Nicholas, R.J. (1997) Influence of substrate dopant type on the optical properties of multiquantum well structures grown by low pressure MOVPE. Journal of Crystal Growth, 170 (1). 132-138 doi:10.1016/s0022-0248(96)00541-6
Fischer, Roland A., Miehr, Alexander, Ambacher, Oliver, Metzger, Thomas, Born, Eberhardt (1997) Novel single source precursors for MOCVD of AlN, GaN and InN. Journal of Crystal Growth, 170 (1). 139-143 doi:10.1016/s0022-0248(96)00532-5
Pohl, U.W., Freitag, S., Gottfriedsen, J., Richter, W., Schumann, H. (1997) Synthesis and properties of zinc-nitrogen compounds for the MOVPE of p-type ZnSe. Journal of Crystal Growth, 170 (1). 144-148 doi:10.1016/s0022-0248(96)00649-5
Ritter, D., Heinecke, H. (1997) Evaluation of cracking efficiency of As and P precursors. Journal of Crystal Growth, 170 (1). 149-154 doi:10.1016/s0022-0248(96)00634-3
Protzmann, H., Höhnsdorf, F., Spika, Z., Stolz, W., Göbel, E.O., Müller, M., Lorberth, J. (1997) Properties of (Ga0.47In0.53)As epitaxial layers grown by metalorganic vapor phase epitaxy (MOVPE) using alternative arsenic precursors. Journal of Crystal Growth, 170 (1). 155-160 doi:10.1016/s0022-0248(96)00640-9
Keidler, M., Popp, M., Ritter, D., Marheineke, B., Heinecke, H., Baumeister, H., Veuhoff, E. (1997) Growth of 1.55 μm DH laserstructures using TBAs and TBP in MOMBE. Journal of Crystal Growth, 170 (1). 161-166 doi:10.1016/s0022-0248(96)00627-6
Kirpal, G., Gerhardt, M., Benndorf, G., Schwabe, R., Pietag, F., Pietzonka, I., Lippold, G., Wagner, G., Franzheld, R., Gottschalch, V. (1997) MOVPE growth and characterization of GaInAs(P) on (001) InP using diethyltertiarybutylarsine (DEtBAs) and tertiarybutylphosphine (TBP) as the group-V sources. Journal of Crystal Growth, 170 (1). 167-172 doi:10.1016/s0022-0248(96)00599-4
Dadgar, A., Köhne, L., Hyeon, J.Y., Grundemann, T., Stenzel, O., Strassburg, M., Kuttler, M., Heitz, R., Bimberg, D., Schumann, H. (1997) 4d- and 5d-transition metal acceptor doping of InP. Journal of Crystal Growth, 170 (1). 173-176 doi:10.1016/s0022-0248(96)00613-6
Ohkubo, M., Osabe, J., Shiojima, T., Yamaguchi, T., Ninomiya, T. (1997) Magnesium-doped InGaAs using (C2H5C5H4)2Mg: application to InP-based HBTs. Journal of Crystal Growth, 170 (1). 177-181 doi:10.1016/s0022-0248(96)00529-5
Stafford, A., Irvine, S.J.C., Griffiths, C.L. (1997) In situ measurement of the thermal and photo-assisted MOVPE of ZnTe using laser reflectometry. Journal of Crystal Growth, 170 (1). 182-187 doi:10.1016/s0022-0248(96)00618-5
Kastner, Marcus J., Hahn, Berthold, Blumberg, Roland, Sossna, Eva, Duschl, Rainer, Gebhardt, Wolfgang (1997) In situ reflectance difference spectroscopy of ZnSe-based semiconductor surfaces. Journal of Crystal Growth, 170 (1). 188-192 doi:10.1016/s0022-0248(96)00582-9
Murthy, S.Dakshina, Bhat, I.B. (1997) In situ monitoring of CdTe nucleation on GaAs (100) using spectroscopic ellipsometry. Journal of Crystal Growth, 170 (1). 193-197 doi:10.1016/s0022-0248(96)00610-0
Gnoth, D.N., Poole, I.B., Ng, T.L., Evans, D.A., Maung, N., Williams, J.O., Wright, A.C. (1997) Growth process studies by reflectance anisotropy spectroscopy on MOVPE ZnSe. Journal of Crystal Growth, 170 (1). 198-202 doi:10.1016/s0022-0248(96)00650-1
Kurpas, P., Rumberg, A., Weyers, M., Knorr, K., Bergunde, T., Sato, M., Richter, W. (1997) Growth monitoring by reflectance anisotropy spectroscopy in MOVPE reactors for device fabrication. Journal of Crystal Growth, 170 (1). 203-207 doi:10.1016/s0022-0248(96)00622-7
Steimetz, E., Schienle, F., Zettler, J.-T., Richter, W. (1997) Stranski-Krastanov formation of InAs quantum dots monitored during growth by reflectance anisotropy spectroscopy and spectroscopic ellipsometry. Journal of Crystal Growth, 170 (1). 208-214 doi:10.1016/s0022-0248(96)00630-6
Patrikarakos, D.G., Shukla, N., Pemble, M.E. (1997) Reflectance anisotropy as an in situ monitor for the growth of InP on (001) InP by pseudo-atmospheric pressure atomic layer epitaxy. Journal of Crystal Growth, 170 (1). 215-218 doi:10.1016/s0022-0248(96)00515-5
Murata, H., Ho, I.H., Stringfellow, G.B. (1997) Effects of growth temperature and ratio on surface structure and ordering in Ga0.5In0.5P. Journal of Crystal Growth, 170 (1). 219-224 doi:10.1016/s0022-0248(96)00556-8
Kobayashi, Naoki, Kobayashi, Yasuyuki, Uwai, Kunihiko (1997) Chemical trend observed in anisotropic surface reflectance spectra of MOVPE by surface photoabsorption. Journal of Crystal Growth, 170 (1). 225-229 doi:10.1016/s0022-0248(96)00520-9
Knorr, K., Pristovsek, M., Resch-Esser, U., Esser, N., Zorn, M., Richter, W. (1997) In situ surface passivation of III–V semiconductors in MOVPE by amorphous As and P layers. Journal of Crystal Growth, 170 (1). 230-236 doi:10.1016/s0022-0248(96)00629-x
Wajid, A., Gogol, C., Hurd, C., Hetzel, M., Spina, A., Lum, R., McDonald, M., Capik, R.J. (1997) A high-speed high-sensitivity acoustic cell for in-line continuous monitoring of MOCVD precursor gases. Journal of Crystal Growth, 170 (1). 237-241 doi:10.1016/s0022-0248(96)00554-4
DeSisto, William J., Rappoli, Brian J. (1997) In-line UV spectroscopy of YBa2Cu3O7 MOCVD precursors. Journal of Crystal Growth, 170 (1). 242-245 doi:10.1016/s0022-0248(96)00624-0
Kasu, Makoto, Kobayashi, Naoki (1997) Surface diffusion kinetics of GaAs and AlAs metalorganic vapor-phase epitaxy. Journal of Crystal Growth, 170 (1). 246-250 doi:10.1016/s0022-0248(96)00522-2
Thévenot, V., Souliere, V., Dumont, H., Monteil, Y., Bouix, J., Regreny, P., Duc, Tran-Minh (1997) Behaviour of vicinal InP surfaces grown by MOVPE: exploitation of AFM images. Journal of Crystal Growth, 170 (1). 251-256 doi:10.1016/s0022-0248(96)00615-x
Spika, Z., Zimprich, C., Stolz, W., Göbel, E.O., Jiang, J., Schaper, A., Werner, P. (1997) Correlation of ordering formation and surface structure in (GaIn)P using modulated MOVPE. Journal of Crystal Growth, 170 (1). 257-262 doi:10.1016/s0022-0248(96)00639-2
Chun, Y.S., Murata, H., Ho, I.H., Hsu, T.C., Stringfellow, G.B. (1997) Use of ratio to produce heterostructures in ordered GaInP. Journal of Crystal Growth, 170 (1). 263-269 doi:10.1016/s0022-0248(96)00555-6
Hageman, P.R., te Nijenhuis, J., Anders, M.J., Giling, L.J. (1997) Dependence of impurity incorporation upon substrate misorientation during GaAs growth by metalorganic vapour phase epitaxy. Journal of Crystal Growth, 170 (1). 270-275 doi:10.1016/s0022-0248(96)00509-x
Funato, Mitsuru, Aoki, Satoshi, Fujita, Shizuo, Fujita, Shigeo (1997) Initial growth behavior of GaAs on ZnSe in MOVPE. Journal of Crystal Growth, 170 (1). 276-280 doi:10.1016/s0022-0248(96)00567-2
Knauer, A., Rechenberg, I., Bugge, F., Gramlich, S., Oelgardt, G., Oster, A., Weyers, M. (1997) Influence of the growth temperature and substrate orientation on the layer properties of MOVPE-growth. Journal of Crystal Growth, 170 (1). 281-286 doi:10.1016/s0022-0248(96)00643-4
Lindner, A., Velling, P., Prost, W., Wiersch, A., Kuphal, E., Burchard, A., Magerle, R., Deicher, M., Tegude, F.J. (1997) The role of hydrogen in low-temperature MOVPE growth and carbon doping of In0.53Ga0.47As for InP-based HBT. Journal of Crystal Growth, 170 (1). 287-291 doi:10.1016/s0022-0248(96)00590-8
Li, Jiang, Kuech, T.F. (1997) Surface morphology of carbon-doped GaAs grown by MOVPE. Journal of Crystal Growth, 170 (1). 292-296 doi:10.1016/s0022-0248(96)00589-1
Hatatani, Shigeo, Guo, Li-Qi, Oh, Je-Hwan, Grahn, Holger T., Konagai, Makoto (1997) Heavily carbon-doped GaAs grown on various oriented GaAs substrates by MOMBE. Journal of Crystal Growth, 170 (1). 297-300 doi:10.1016/s0022-0248(96)00584-2
Bruno, G., Losurdo, M., Capezzuto, P. (1997) On the use of remote RF plasma source to enhance III–V MOCVD technology. Journal of Crystal Growth, 170 (1). 301-305 doi:10.1016/s0022-0248(96)00619-7
Koukitu, Akinori, Takahashi, Naoyuki, Taki, Tetsuya, Seki, Hisashi (1997) Thermodynamic analysis of the MOVPE growth of In Ga1−N. Journal of Crystal Growth, 170 (1). 306-311 doi:10.1016/s0022-0248(96)00535-0
Nishida, K., Haneda, S., Hara, K., Munekata, H., Kukimoto, H. (1997) MOVPE of GaN using a specially designed two-flow horizontal reactor. Journal of Crystal Growth, 170 (1). 312-315 doi:10.1016/s0022-0248(96)00598-2
Beaumont, B., Vaille, M., Boufaden, T., el Jani, B., Gibart, P. (1997) High quality GaN grown by MOVPE. Journal of Crystal Growth, 170 (1). 316-320 doi:10.1016/s0022-0248(96)00635-5
Scholz, F., Härle, V., Steuber, F., Bolay, H., Dörnen, A., Kaufmann, B., Syganow, V., Hangleiter, A. (1997) Low pressure MOVPE of GaN and heterostructures. Journal of Crystal Growth, 170 (1). 321-324 doi:10.1016/s0022-0248(96)00606-9
Ohuchi, Y., Tadatomo, K., Nakayama, H., Kaneda, N., Detchprohm, T., Hiramatsu, K., Sawaki, N. (1997) New dopant precursors for n-type and p-type GaN. Journal of Crystal Growth, 170 (1). 325-328 doi:10.1016/s0022-0248(96)00570-2
Tanaka, Satoru, Iwai, Sohachi, Aoyagi, Yoshinobu (1997) Reduction of the defect density in GaN films using ultra-thin AlN buffer layers on 6H-SiC. Journal of Crystal Growth, 170 (1). 329-334 doi:10.1016/s0022-0248(96)00611-2
Ambacher, O., Dimitrov, R., Lentz, D., Metzger, T., Rieger, W., Stutzmann, M. (1997) Growth of and AlGaN by MOCVD using triethylgallium and tritertiarybutylaluminium. Journal of Crystal Growth, 170 (1). 335-339 doi:10.1016/s0022-0248(96)00623-9
Kapolnek, D., Underwood, R.D., Keller, B.P., Keller, S., Denbaars, S.P., Mishra, U.K. (1997) Selective area epitaxy of GaN for electron field emission devices. Journal of Crystal Growth, 170 (1). 340-343 doi:10.1016/s0022-0248(96)00620-3
Van der Stricht, W., Moerman, I., Demeester, P., Crawley, J.A, Thrush, E.J. (1997) Study of GaN and InGaN films grown by metalorganic chemical vapour deposition. Journal of Crystal Growth, 170 (1). 344-348 doi:10.1016/s0022-0248(96)00595-7
Keller, S., Keller, B.P., Kapolnek, D., Mishra, U.K., DenBaars, S.P., Shmagin, I.K., Kolbas, R.M., Krishnankutty, S. (1997) Growth of bulk InGaN films and quantum wells by atmospheric pressure metalorganic chemical vapour deposition. Journal of Crystal Growth, 170 (1). 349-352 doi:10.1016/s0022-0248(96)00553-2
Yaguchi, Hiroyuki, Miyoshi, Seiro, Biwa, Goshi, Kibune, Masaya, Onabe, Kentaro, Shiraki, Yasuhiro, Ito, Ryoichi (1997) Photoluminescence excitation spectroscopy of GaP1−N alloys: conduction-band-edge formation by nitrogen incorporation. Journal of Crystal Growth, 170 (1). 353-356 doi:10.1016/s0022-0248(96)00592-1
Liu, Jutong, Zhi, Dan, Redwing, J.M., Tischler, M.A., Kuech, T.F. (1997) GaN films studied by near-field scanning optical microscopy, atomic force microscopy and high resolution X-ray diffraction. Journal of Crystal Growth, 170 (1). 357-361 doi:10.1016/s0022-0248(96)00588-x
Huang, Z.C., Chen, J.C., Wickenden, Dennis (1997) Characterization of GaN using thermally stimulated current and photocurrent spectroscopies and its application to UV detectors. Journal of Crystal Growth, 170 (1). 362-366 doi:10.1016/s0022-0248(96)00576-3
Wickenden, A.E., Alexander, W.B., Koleske, D.D., Freitas, J.A. (1997) The influence of strain and mosaic structure on electrical and optical properties of GaN films on sapphire substrates. Journal of Crystal Growth, 170 (1). 367-371 doi:10.1016/s0022-0248(96)00655-0
Saito, Hisao, Makimoto, Toshiki, Kobayashi, Naoki (1997) Photoluminescence characteristics of nitrogen atomic-layer-doped GaAs grown by MOVPE. Journal of Crystal Growth, 170 (1). 372-376 doi:10.1016/s0022-0248(96)00523-4
Nakamura, Koji, Oshiba, Saeko, Nakajima, Michito, Gotoh, Shu, Horikawa, Hideaki (1997) Microampere laser threshold at 80°C with InGaAs/GaAs/InGaP buried heterostructre strained quantum well lasers. Journal of Crystal Growth, 170 (1). 377-382 doi:10.1016/s0022-0248(96)00569-6
Mawst, L.J., Bhattacharya, A., Nesnidal, M., Lopez, J., Botez, D., Syrbu, A.V., Yakovlev, V.P., Suruceanu, G.I., Mereutza, A.Z., Jansen, M., Nabiev, R.F. (1997) MOVPE-grown high CW power InGaAs/InGaAsP/InGaP diode lasers. Journal of Crystal Growth, 170 (1). 383-389 doi:10.1016/s0022-0248(96)00513-1
Hirotani, M., Sale, T.E., Woodhead, J., Roberts, J.S., Robson, P.N., Saka, T., Kato, T. (1997) High power, high speed surface emitting LEDs with an InGaAs quantum well. Journal of Crystal Growth, 170 (1). 390-393 doi:10.1016/s0022-0248(96)00534-9
Chen, Y.H., Wilkinson, C.I., Woodhead, J., David, J.P.R., Button, C.C., Robson, P.N. (1997) Polarisation characteristics of visible VCSELs. Journal of Crystal Growth, 170 (1). 394-398 doi:10.1016/s0022-0248(96)00516-7
Sale, T.E., Roberts, J.S., Woodhead, J., David, J.P.R., Robson, P.N. (1997) Visible (683 to 713 nm) room-temperature AlGaAs vertical cavity surface emitting lasers (VCSELs). Journal of Crystal Growth, 170 (1). 399-403 doi:10.1016/s0022-0248(96)00628-8
Moser, M., Gulden, K.H., Epler, J., Schweizer, H.P. (1997) High performance deep red top-emitting VCSELs grown by MOVPE at high growth rates. Journal of Crystal Growth, 170 (1). 404-407 doi:10.1016/s0022-0248(96)00517-9
Maląg, Andrzej, Strupiński, Włodzimierz (1997) MOVPE-grown (AlGa)As double-barrier multiquantum well (DBMQW) laser diode with low vertical beam divergence. Journal of Crystal Growth, 170 (1). 408-412 doi:10.1016/s0022-0248(96)00565-9
Islam, M.R., Dupuis, R.D., Holmes, A.L., Curtis, A.P., Gardner, N.F., Stillman, G.E., Baker, J.E., Hull, R. (1997) Luminescence characteristics of InAlPî—¸InGaP heterostructures having native-oxide windows. Journal of Crystal Growth, 170 (1). 413-417 doi:10.1016/s0022-0248(96)00587-8
Geng, C., Moritz, A., Heppel, S., Mühe, A., Kuhn, J., Ernst, P., Schweizer, H., Phillipp, F., Hangleiter, A., Scholz, F. (1997) Influence of order-domain size on the optical gain of AlGaInP laser structures. Journal of Crystal Growth, 170 (1). 418-423 doi:10.1016/s0022-0248(96)00544-1
Clark, A., Egan, R.J., Jagadish, C. (1997) Design and optimisation of multilayer structures for visible wavelength applications. Journal of Crystal Growth, 170 (1). 424-427 doi:10.1016/s0022-0248(96)00561-1
Mao, E., Majerfeld, A. (1997) Growth of heavily C-doped MQW structures by MOVPE for 2–3 μm normal incidence photodetectors. Journal of Crystal Growth, 170 (1). 428-432 doi:10.1016/s0022-0248(96)00642-2
Songyan, Chen, Baolin, Liu, Benzhong, Wang, Meichun, Huang, Longhai, Chen, Chao, Chen (1997) GaAsî—¸InP heteroepitaxy and GaAsî—¸InP MESFET fabrication by MOVPE. Journal of Crystal Growth, 170 (1). 433-437 doi:10.1016/s0022-0248(96)00626-4
Liu, Wen-Chau, Laih, Lih-Wen, Tsai, Jung-Hui, Lin, Kun-Wei, Cheng, Chin-Chuan (1997) InGaAsî—¸GaAs pseudomorphic heterostructure transistors prepared by MOVPE. Journal of Crystal Growth, 170 (1). 438-441 doi:10.1016/s0022-0248(96)00502-7
Kurpas, P., Richter, E., Sato, M., Brunner, F., Gutsche, D., Weyers, M. (1997) MOVPE growth of hetero-bipolar-transistors using CBr4 as carbon dopant source. Journal of Crystal Growth, 170 (1). 442-446 doi:10.1016/s0022-0248(96)00621-5
Soga, T., Kato, T., Baskar, K., Shao, C.L., Jimbo, T., Umeno, M. (1997) MOCVD growth of high-quality AlGaAs on Si substrates for high-efficiency solar cells. Journal of Crystal Growth, 170 (1). 447-450 doi:10.1016/s0022-0248(96)00507-6
Eisenbach, A., Goldhorn, A., Kuphal, E., Mause, K. (1997) MOVPE growth for an integrated PIN-HBT receiver using Zn-doped p+-InGaAs layers. Journal of Crystal Growth, 170 (1). 451-455 doi:10.1016/s0022-0248(96)00646-x
Sakata, Y., Morimoto, T., Inomoto, Y., Hasumi, H. (1997) Low-threshold strained multi-quantum well lasers fabricated by selective metalorganic vapor phase epitaxy without a semiconductor etching process. Journal of Crystal Growth, 170 (1). 456-460 doi:10.1016/s0022-0248(96)00524-6
Toda, A., Nakamura, F., Yanashima, K., Ishibashi, A. (1997) Blue-green laser diode grown by photo-assisted MOCVD. Journal of Crystal Growth, 170 (1). 461-466 doi:10.1016/s0022-0248(96)00631-8
Bevan, M.J., Shih, H.D., Liu, H.Y., Syllaios, A.J., Duncan, W.M. (1997) Growth of high quality ZnSe on closely lattice-matched InGaAs substrates by metal organic chemical vapor deposition. Journal of Crystal Growth, 170 (1). 467-471 doi:10.1016/s0022-0248(96)00591-x
Hahn, Berthold, Deufel, Marcus, Meier, Marcus, Kastner, Marcus J., Blumberg, Roland, Gebhardt, Wolfgang (1997) Photoassisted growth and nitrogen doping of ZnSe. Journal of Crystal Growth, 170 (1). 472-475 doi:10.1016/s0022-0248(96)00581-7
Pickett, Nigel L., Foster, Douglas F., Cole-Hamilton, David J. (1997) Studies of prereactions during MOVPE growth of wide band-gap semiconductors: the effect of pyridine upon the gas-phase reactions between H2S and Me2Zn. Journal of Crystal Growth, 170 (1). 476-479 doi:10.1016/s0022-0248(96)00647-1
Suemune, I., Obinata, T., Uesugi, K., Suzuki, H., Kumano, H., Nashiki, H., Nakahara, J. (1997) Growth of zincblende superlattices and their heterointerface properties. Journal of Crystal Growth, 170 (1). 480-484 doi:10.1016/s0022-0248(96)00546-5
Fan, G.H., Maung, N., Ng, T.L., Heelis, P.F., Williams, J.O., Wright, A.C., Foster, D.F., Cole-Hamilton, D.J. (1997) Thermal decomposition of di-tertiarybutyl selenide and dimethylzinc in a metalorganic vapour phase epitaxy reactor. Journal of Crystal Growth, 170 (1). 485-490 doi:10.1016/s0022-0248(96)00539-8
Taudt, W., Hardt, A., Lampe, S., Hamadeh, H., Heuken, M. (1997) Nitrogen as carrier gas for the growth of ZnSe and ZnSe:N in plasma enhanced metalorganic vapor phase epitaxy. Journal of Crystal Growth, 170 (1). 491-496 doi:10.1016/s0022-0248(96)00594-5
Bao, K.X., Mo, R., Zhang, X.G., Kalisetty, S., Gokhale, M., Robinson, J., Zhao, G., Ayers, J.E., Jain, F.C. (1997) Compositional control of Cd Zn1−Se grown by photoassisted organometallic vapor phase epitaxy. Journal of Crystal Growth, 170 (1). 497-502 doi:10.1016/s0022-0248(96)00652-5
Honda, T., Lim, S.W., Inoue, K., Hara, K., Munekata, H., Kukimoto, H., Koyama, F., Iga, K. (1997) Diode characteristics of Li3N-diffused ZnSe grown by MOVPE. Journal of Crystal Growth, 170 (1). 503-506 doi:10.1016/s0022-0248(96)00616-1
Ogata, Ken-ichi, Kera, Takashi, Kawaguchi, Daisuke, Fujita, Shizuo, Fujita, Shigeo (1997) Characterization of p-type ZnSe grown by MOVPE; excitonic emission lifetime measurements. Journal of Crystal Growth, 170 (1). 507-509 doi:10.1016/s0022-0248(96)00549-0
Goto, Hideo, Takemura, Masaaki, Ido, Toshiyuki (1997) Deep hole trap level of nitrogen-doped ZnSe grown by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 170 (1). 510-513 doi:10.1016/s0022-0248(96)00540-4
Duan, Shu-kun, Lu, Da-cheng (1997) Phase diagrams for the MOVPE growth of ZnTe and ZnSeTe. Journal of Crystal Growth, 170 (1). 514-517 doi:10.1016/s0022-0248(96)00526-x
Kamata, Atsushi, Yoshida, Hiroaki, Chichibu, Shigefusa, Nakanishi, Hisayuki (1997) Growth and doping characteristics of ZnSeTe epilayers by MOCVD. Journal of Crystal Growth, 170 (1). 518-522 doi:10.1016/s0022-0248(96)00575-1
Peck, J., Mountziaris, T.J., Stoltz, S., Petrou, A., Mattocks, P.G. (1997) Metalorganic vapor phase epitaxy of Zn1−Fe Se films. Journal of Crystal Growth, 170 (1). 523-527 doi:10.1016/s0022-0248(96)00638-0
Poole, I.B., Ng, T.L., Maung, N., Williams, J.O., Wright, A.C. (1997) MOVPE growth of magnesium cadmium sulphide: rocksalt or sphalerite?. Journal of Crystal Growth, 170 (1). 528-532 doi:10.1016/s0022-0248(96)00644-6
Gurskii, A.L., Taudt, W., Lampe, S., Hamadeh, H., Sauerländer, F., Germain, M., Basilavecchia, M., Evrard, R., Yablonskii, G.P., Heuken, M. (1997) Optical and electrical properties of MOVPE-grown ZnSe:N using triallylamine as a nitrogen precursor. Journal of Crystal Growth, 170 (1). 533-536 doi:10.1016/s0022-0248(96)00527-1
Prösch, G., Hellig, K., Beyer, R., Schneider, A., Burghardt, H., Taudt, W., Heuken, M., Zahn, D.R.T. (1997) Defects in MOVPE grown ZnSe on GaAs studied by deep level transient spectroscopy. Journal of Crystal Growth, 170 (1). 537-541 doi:10.1016/s0022-0248(96)00604-5
Mitra, P., Case, F.C., Reine, M.B., Starr, R., Weiler, M.H. (1997) Doping in MOVPE of HgCdTe: orientation effects and growth of high performance IR photodiodes. Journal of Crystal Growth, 170 (1). 542-548 doi:10.1016/s0022-0248(96)00651-3
Tromson-Carli, A., Zozime, A., Ertel, J., Seibt, M., Druilhe, R., Grattepain, C., Triboulet, R. (1997) Influence of a ZnMnTe nucleation layer on the structural quality of (111) ZnTe grown by MOVPE on (100) GaAs. Journal of Crystal Growth, 170 (1). 549-552 doi:10.1016/s0022-0248(96)00560-x
Mazzer, M., Longo, M., Leo, G., Lovergine, N., Mancini, A.M., Drigo, A.V., Romanato, F., Fregonara, C.Zanotti, Salviati, G. (1997) Structural study of (100) CdTe epilayers grown by MOVPE on ZnTe buffered and unbuffered (100) GaAs. Journal of Crystal Growth, 170 (1). 553-557 doi:10.1016/s0022-0248(96)00601-x
Geiger, M., Bauknecht, A., Adler, F., Schweizer, H., Scholz, F. (1997) Observation of the 2D–3D growth mode transition in the system. Journal of Crystal Growth, 170 (1). 558-562 doi:10.1016/s0022-0248(96)00608-2
Kitamura, M., Nishioka, M., Schur, R., Arakawa, Y. (1997) Direct observation of the transition from a 2D layer to 3D islands at the initial stage of InGaAs growth on GaAs by AFM. Journal of Crystal Growth, 170 (1). 563-567 doi:10.1016/s0022-0248(96)00645-8
Heinrichsdorff, F., Krost, A., Grundmann, M., Bimberg, D., Bertram, F., Christen, J., Kosogov, A., Werner, P. (1997) Self organization phenomena of quantum dots grown by metalorganic chemical vapour deposition. Journal of Crystal Growth, 170 (1). 568-573 doi:10.1016/s0022-0248(96)00614-8
Arès, R., Watkins, S.P., Tran, C.A. (1997) Breakdown of self-limiting behaviour in heterostructures grown by atomic layer epitaxy. Journal of Crystal Growth, 170 (1). 574-578 doi:10.1016/s0022-0248(96)00632-x
Hara, Shinjiroh, Motohisa, Junichi, Fukui, Takashi (1997) Formation and characterization of InGaAs strained quantum wires on GaAs multiatomic steps grown by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 170 (1). 579-584 doi:10.1016/s0022-0248(96)00636-7
Pan, Wugen, Yaguchi, Hiroyuki, Hanamaki, Yoshihiko, Ishikawa, Mitsuteru, Kaneko, Yasuhisa, Onabe, Kentaro, Ito, Ryoichi, Shiraki, Yasuhiro (1997) A highly luminescent crescent-shaped tensile-strained quantum wire laser structure. Journal of Crystal Growth, 170 (1). 585-589 doi:10.1016/s0022-0248(96)00593-3
Kappelt, M., Türck, V., Grundmann, M., Cerva, H., Bimberg, D. (1997) Low pressure metal-organic chemical vapor deposition of InP/InAlAs/InGaAs quantum wires. Journal of Crystal Growth, 170 (1). 590-594 doi:10.1016/s0022-0248(96)00612-4
Chelakara, R.V., Grudowski, P.A., Dupuis, R.D. (1997) Design and growth of strained-superlattice-barrier heterostructures for use in light-emitting devices. Journal of Crystal Growth, 170 (1). 595-599 doi:10.1016/s0022-0248(96)00586-6
Biasiol, G., Martinet, E., Reinhardt, F., Gustafsson, A., Kapon, E. (1997) Low-pressure OMCVD growth of AlGaAs vertical quantum wells on non-planar substrates. Journal of Crystal Growth, 170 (1). 600-604 doi:10.1016/s0022-0248(96)00568-4
Hartmann, A., Bongartz, M., Hollfelder, M., Hardtdegen, H., Dieker, Ch., Lüth, H. (1997) Growth of modulation-doped quantum wires on V-groove patterned substrates. Journal of Crystal Growth, 170 (1). 605-610 doi:10.1016/s0022-0248(96)00547-7
Yates, H.M., Flavell, W.R., Pemble, M.E., Johnson, N.P., Romanov, S.G., Sotomayor-Torres, C.M. (1997) Novel quantum confined structures via atmospheric pressure MOCVD growth in asbestos and opals. Journal of Crystal Growth, 170 (1). 611-615 doi:10.1016/s0022-0248(96)00512-x
D'Hondt, M., Moerman, I., Demeester, P. (1997) Characterisation of 2% mismatched InGaAs and InAsP layers, grown on different buffer layers and at different growth temperatures. Journal of Crystal Growth, 170 (1). 616-620 doi:10.1016/s0022-0248(96)00602-1
Roberts, J.S., David, J.P.R., Chen, Y.H., Sale, T.E. (1997) Optical properties of MOVPE grown Al Ga1−As quantum wells. Journal of Crystal Growth, 170 (1). 621-625 doi:10.1016/s0022-0248(96)00506-4
Otsuka, Nobuyuki, Kito, Masahiro, Yabuuchi, Yasufumi, Ishino, Masato, Matsui, Yasushi (1997) Anomalous temperature dependence of PL characteristics in ordered InGaAsP strained layer multi-quantum well structure. Journal of Crystal Growth, 170 (1). 626-633 doi:10.1016/s0022-0248(96)00585-4
Kudo, Koji, Sasaki, Tatsuya, Yamaguchi, Masayuki (1997) Migration-controlled narrow-stripe selective MOVPE for high-quality MQWs. Journal of Crystal Growth, 170 (1). 634-638 doi:10.1016/s0022-0248(96)00557-x
Silvestre, L., Ougazzaden, A., Delprat, D., Ramdane, A., Daguet, C., Patriarche, G. (1997) Study of growth rate and composition variations in metalorganic vapour phase selective area epitaxy at atmospheric pressure and application to the growth of strained layer DBR lasers. Journal of Crystal Growth, 170 (1). 639-644 doi:10.1016/s0022-0248(96)00533-7
Zimmermann, G., Ougazzaden, A., Gloukhian, A., Rao, E.V.K., Delprat, D., Ramdane, A., Mircea, A. (1997) Selective area MOVPE growth of InP, InGaAs and InGaAsP using TBAs and TBP at different growth conditions. Journal of Crystal Growth, 170 (1). 645-649 doi:10.1016/s0022-0248(97)80021-8
Verschuren, C.A., Leys, M.R., Oei, Y.S., Vreeburg, C.G.M., Vonk, H., Rongen, R.T.H., Wolter, J.H. (1997) Surface morphology of in selective area growth by chemical beam epitaxy. Journal of Crystal Growth, 170 (1). 650-654 doi:10.1016/s0022-0248(96)00550-7
Behres, A., Werner, H., Kohl, A., Heime, K. (1997) InP growth on ion-implanted InP substrate: a new method to achieve selective area MOVPE. Journal of Crystal Growth, 170 (1). 655-660 doi:10.1016/s0022-0248(96)00536-2
Suzuki, M., Aoki, M., Komori, M., Sato, H., Minagawa, S. (1997) Silicon shadow mask MOVPE for in-plane thickness control of structures. Journal of Crystal Growth, 170 (1). 661-664 doi:10.1016/s0022-0248(96)00514-3
Kim, Seong-Il, Kim, Moo-Sung, Kim, Yong, Hwang, Seong-Min, Min, Byung-Don, Son, Chang Sik, Kim, Eun Kyu, Min, Suk-Ki (1997) Lateral growth rate control of GaAs on patterned substrates by CCl4 and CBr4 during MOCVD. Journal of Crystal Growth, 170 (1). 665-668 doi:10.1016/s0022-0248(96)00572-6
Tsuji, Masayoshi, Makita, Kikuo, Takeuchi, Takeshi, Taguchi, Kenko (1997) Large bandgap energy control of multiple quantum wells selectively grown by low-pressure MOVPE. Journal of Crystal Growth, 170 (1). 669-673 doi:10.1016/s0022-0248(96)00528-3
Ortion, J.M., Cordier, Y., Garcia, J.C., Adam, D., Champagne, M. (1997) Selective area etching of heterostructures using AsCl3. Journal of Crystal Growth, 170 (1). 674-678 doi:10.1016/s0022-0248(96)00653-7
Fujii, Katsushi, Shimoyama, Kenji, Hosoi, Nobuyuki, Kiyomi, Kazumasa, Yamauchi, Atsunori, Gotoh, Hideki (1997) Dependence of deposition selectivity for MOVPE of AlGaAs using HCl gas on the orientation of the substrate and the orientation of the stripe of SiN masks. Journal of Crystal Growth, 170 (1). 679-684 doi:10.1016/s0022-0248(96)00564-7
Ekawa, Mitsuru, Fujii, Takuya, Tanahashi, Toshiyuki (1997) Effect of incorporation efficiency on dopant behaviors in selective-area metalorganic vapor phase epitaxy. Journal of Crystal Growth, 170 (1). 685-688 doi:10.1016/s0022-0248(96)00574-x
Reinhardt, F., Dwir, B., Biasiol, G., Kapon, E. (1997) Step ordering during OMCVD growth on non-planar substrates. Journal of Crystal Growth, 170 (1). 689-694 doi:10.1016/s0022-0248(96)00571-4
Ottenwälder, D., Frankowsky, G., Gfrörer, O., Hangleiter, A., Scholz, F. (1997) Control of monolayer terrace formation in selective epitaxy. Journal of Crystal Growth, 170 (1). 695-699 doi:10.1016/s0022-0248(96)00607-0
Kumakura, Kazuhide, Motohisa, Junichi, Fukui, Takashi (1997) Formation and characterization of coupled quantum dots (CQDs) by selective area metalorganic vapor phase epitaxy. Journal of Crystal Growth, 170 (1). 700-704 doi:10.1016/s0022-0248(96)00641-0
Takiguchi, T., Itagaki, T., Takemi, M., Takemoto, A., Miyazaki, Y., Shibata, K., Hisa, Y., Goto, K., Mihashi, Y., Takamiya, S., Aiga, M. (1997) Selective-area MOCVD growth for 1.3 μm laser diodes with a monolithically integrated waveguide lens. Journal of Crystal Growth, 170 (1). 705-709 doi:10.1016/s0022-0248(96)00597-0
Bastos, P.L., Anders, M.J., Bongers, M.M.G., Hageman, P.R., Giling, L.J. (1997) Temperature dependence on the emerging crystal habit of GaInP deposited on nonplanar {001}GaAs substrates. Journal of Crystal Growth, 170 (1). 710-714 doi:10.1016/s0022-0248(96)00501-5
Bertone, D., Bricconi, A., Fang, R.Y., Greborio, L., Magnetti, G., Meliga, M., Paoletti, R. (1997) MOCVD regrowth of semi-insulating InP and p-n junction blocking layers around laser active stripes. Journal of Crystal Growth, 170 (1). 715-718 doi:10.1016/s0022-0248(96)00537-4
Ando, S., Kobayashi, N., Ando, H., Horikoshi, Y. (1997) Hexagonal facet laser with optical waveguides grown by flow-rate modulation epitaxy. Journal of Crystal Growth, 170 (1). 719-724 doi:10.1016/s0022-0248(96)00521-0
Wang, C.A. (1997) Organometallic vapor phase epitaxial growth of AlSb-based alloys. Journal of Crystal Growth, 170 (1). 725-731 doi:10.1016/s0022-0248(96)00579-9
Lakner, H., Ungerechts, S., Behres, A., Kohl, A., Opitz, B., Heime, K., Woitok, J. (1997) Characterization of MOVPE grown InGaAsP superlattices for modulators by electron diffraction, X-ray diffraction and Z-contrast imaging. Journal of Crystal Growth, 170 (1). 732-737 doi:10.1016/s0022-0248(96)00504-0
Vanderbauwhede, W., Zhang, X., Moerman, I., Demeester, P. (1997) Growth and characterization of MQW structures. Journal of Crystal Growth, 170 (1). 738-742 doi:10.1016/s0022-0248(96)00596-9
Maigné, P., Coulas, D. (1997) Structural investigation of MOVPE grown InGaAs buffer layers. Journal of Crystal Growth, 170 (1). 743-747 doi:10.1016/s0022-0248(96)00562-3
Rettig, R., Marschner, T., Tapfer, L., Stolz, W., Göbel, E.O. (1997) Growth and structural properties of intentionally disordered superlattice structures grown by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 170 (1). 748-751 doi:10.1016/s0022-0248(96)00511-8
Westwater, S.P., Bullough, T.J. (1997) The microstructure and thermal stability of CBE grown heavily carbon doped GaAs. Journal of Crystal Growth, 170 (1). 752-756 doi:10.1016/s0022-0248(96)00510-6
Lee, Kun-Jing, Chen, J.C. (1997) Regrowth of high-quality AlGaAs and AlGaInP layers and quantum well structures on Se-doped AlGaAs by MOVPE. Journal of Crystal Growth, 170 (1). 757-761 doi:10.1016/s0022-0248(96)00577-5
Nittono, Takumi, Hyuga, Fumiaki (1997) Reduction of unintentional impurities at the interface between epitaxial layers and GaAs substrates. Journal of Crystal Growth, 170 (1). 762-766 doi:10.1016/s0022-0248(96)00505-2
Schneider, A., Drews, D., Söllner, J., Heuken, M., Zahn, D.R.T. (1997) Temperature induced resonant Raman scattering of MOVPE grown heterostructures. Journal of Crystal Growth, 170 (1). 767-771 doi:10.1016/s0022-0248(96)00605-7
Tümmler, J., Woitok, J., Hermans, J., Geurts, J., Schneider, P., Moulin, D., Behet, M., Heime, K. (1997) Growth and characterization of Sb-based heterostructures grown by LP-MOVPE. Journal of Crystal Growth, 170 (1). 772-776 doi:10.1016/s0022-0248(96)00531-3
Booker, G.R., Daly, M., Klipstein, P.C., Lakrimi, M., Kuech, T.F., Li, Jiang, Lyapin, S.G., Mason, N.J., Murgatroyd, I.J., Portal, J.C., Nicholas, R.J., Symons, D.M., Vicente, P., Walker, P.J. (1997) Growth of strained layer superlattices by MOVPE III. Use of UV absorption to monitor alkyl stability in the reactor. Journal of Crystal Growth, 170 (1). 777-782 doi:10.1016/s0022-0248(96)00578-7
von Eichel-Streiber, C., Behet, M., Heuken, M., Heime, K. (1997) Doping of InAs, GaSb and InPSb by low pressure MOVPE. Journal of Crystal Growth, 170 (1). 783-787 doi:10.1016/s0022-0248(96)00530-1
Watkins, S.P., Arès, R., Soerensen, G., Zhong, W., Tran, C.A., Bryce, J.E., Bolognesi, C.R. (1997) Atomic force microscopy study of morphology and dislocation structure of InAs and GaSb grown on highly mismatched substrates. Journal of Crystal Growth, 170 (1). 788-793 doi:10.1016/s0022-0248(96)00633-1
Hjelt, Kari, Tuomi, Turkka (1997) Photoluminescence and electrical properties of MOVPE-grown zinc-doped gallium antimonide on gallium arsenide. Journal of Crystal Growth, 170 (1). 794-798 doi:10.1016/s0022-0248(96)00543-x
Becht, M., Wang, F., Wen, J.G., Morishita, T. (1997) Evolution of the microstructure of oxide thin films. Journal of Crystal Growth, 170 (1). 799-802 doi:10.1016/s0022-0248(96)00563-5
Kim, Eun Kyu, Ho Son, Maeng, Min, Suk-Ki, Han, Y.K., Yom, S.S. (1997) Growth of highly oriented TiO2 thin films on InP(100) substrates by metalorganic chemical vapor deposition. Journal of Crystal Growth, 170 (1). 803-807 doi:10.1016/s0022-0248(96)00573-8
Thomas, B., Ellmer, K., Müller, M., Höpfner, C., Fiechter, S., Tributsch, H. (1997) Structural and photoelectrical properties of FeS2 (pyrite) thin films grown by MOCVD. Journal of Crystal Growth, 170 (1). 808-812 doi:10.1016/s0022-0248(96)00600-8
Scriven, G.J., Leitch, A.W.R., Neethling, J.H., Kozyrkov, V.V., Watters, V.J. (1997) The growth of Zn3As2 on InP by atmospheric pressure MOVPE. Journal of Crystal Growth, 170 (1). 813-816 doi:10.1016/s0022-0248(96)00558-1
Venkatasubramanian, R., Colpitts, T., Watko, E., Lamvik, M., El-Masry, N. (1997) MOCVD of Bi2Te3, Sb2Te3 and their superlattice structures for thin-film thermoelectric applications. Journal of Crystal Growth, 170 (1). 817-821 doi:10.1016/s0022-0248(96)00656-2
(1997) Author index. Journal of Crystal Growth, 170 (1). 822-833 doi:10.1016/s0022-0248(97)90091-9
(1997) Subject index. Journal of Crystal Growth, 170 (1). 834-836 doi:10.1016/s0022-0248(97)90093-2

See Also

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(1997, January) Journal of Crystal Growth Vol. 171 (1) Elsevier BV
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