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Arès, R., Watkins, S.P., Tran, C.A. (1997) Breakdown of self-limiting behaviour in heterostructures grown by atomic layer epitaxy. Journal of Crystal Growth, 170 (1). 574-578 doi:10.1016/s0022-0248(96)00632-x

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Reference TypeJournal (article/letter/editorial)
TitleBreakdown of self-limiting behaviour in heterostructures grown by atomic layer epitaxy
JournalJournal of Crystal Growth
AuthorsArès, R.Author
Watkins, S.P.Author
Tran, C.A.Author
Year1997 (January)Volume170
Issue1
PublisherElsevier BV
DOIdoi:10.1016/s0022-0248(96)00632-xSearch in ResearchGate
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Mindat Ref. ID2831738Long-form Identifiermindat:1:5:2831738:8
GUID0
Full ReferenceArès, R., Watkins, S.P., Tran, C.A. (1997) Breakdown of self-limiting behaviour in heterostructures grown by atomic layer epitaxy. Journal of Crystal Growth, 170 (1). 574-578 doi:10.1016/s0022-0248(96)00632-x
Plain TextArès, R., Watkins, S.P., Tran, C.A. (1997) Breakdown of self-limiting behaviour in heterostructures grown by atomic layer epitaxy. Journal of Crystal Growth, 170 (1). 574-578 doi:10.1016/s0022-0248(96)00632-x
In(1997, January) Journal of Crystal Growth Vol. 170 (1) Elsevier BV

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Watkins, S.P., Arès, R., Soerensen, G., Zhong, W., Tran, C.A., Bryce, J.E., Bolognesi, C.R. (1997) Atomic force microscopy study of morphology and dislocation structure of InAs and GaSb grown on highly mismatched substrates. Journal of Crystal Growth, 170 (1). 788-793 doi:10.1016/s0022-0248(96)00633-1
Arès, R., Tran, C. A., Watkins, S. P. (1995) In situ observation of indium segregation by reflectance difference spectroscopy in single monolayer heterostructures grown by atomic layer epitaxy. Applied Physics Letters, 67 (11). 1576-1578 doi:10.1063/1.114944
Gupta, J.A., Woicik, J.C., Watkins, S.P., Miyano, K.E., Pellegrino, J.G., Crozier, E.D. (1998) An X-ray standing wave study of ultrathin InAs films in GaAs(001) grown by atomic layer epitaxy. Journal of Crystal Growth, 195 (1). 34-40 doi:10.1016/s0022-0248(98)00636-8
Gupta, J.A., Watkins, S.P., Arès, R., Soerensen, G. (1998) MOVPE growth of single monolayers of InAs in GaAs studied by time-resolved reflectance difference spectroscopy. Journal of Crystal Growth, 195 (1). 205-210 doi:10.1016/s0022-0248(98)00637-x
Saito, Hisao, Makimoto, Toshiki, Kobayashi, Naoki (1997) Photoluminescence characteristics of nitrogen atomic-layer-doped GaAs grown by MOVPE. Journal of Crystal Growth, 170 (1). 372-376 doi:10.1016/s0022-0248(96)00523-4
Thévenot, V., Souliere, V., Dumont, H., Monteil, Y., Bouix, J., Regreny, P., Duc, Tran-Minh (1997) Behaviour of vicinal InP surfaces grown by MOVPE: exploitation of AFM images. Journal of Crystal Growth, 170 (1). 251-256 doi:10.1016/s0022-0248(96)00615-x
Arès, R., Hu, J., Yeo, P., Watkins, S.P. (1998) Time-resolved reflectance difference spectroscopy of InAs growth under alternating flow conditions. Journal of Crystal Growth, 195 (1). 234-241 doi:10.1016/s0022-0248(98)00707-6
Knight, D.G., Kelly, G., Hu, J., Watkins, S.P., Thewalt, M.L.W. (1997) Characterization of interfacial dopant layer for high-purity InP grown by MOCVD. Journal of Crystal Growth, 182 (1). 23-29 doi:10.1016/s0022-0248(97)00307-2
Verschuren, C.A., Leys, M.R., Oei, Y.S., Vreeburg, C.G.M., Vonk, H., Rongen, R.T.H., Wolter, J.H. (1997) Surface morphology of in selective area growth by chemical beam epitaxy. Journal of Crystal Growth, 170 (1). 650-654 doi:10.1016/s0022-0248(96)00550-7
Patrikarakos, D.G., Shukla, N., Pemble, M.E. (1997) Reflectance anisotropy as an in situ monitor for the growth of InP on (001) InP by pseudo-atmospheric pressure atomic layer epitaxy. Journal of Crystal Growth, 170 (1). 215-218 doi:10.1016/s0022-0248(96)00515-5
Rettig, R., Marschner, T., Tapfer, L., Stolz, W., Göbel, E.O. (1997) Growth and structural properties of intentionally disordered superlattice structures grown by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 170 (1). 748-751 doi:10.1016/s0022-0248(96)00511-8
 
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