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Gupta, J.A., Watkins, S.P., Arès, R., Soerensen, G. (1998) MOVPE growth of single monolayers of InAs in GaAs studied by time-resolved reflectance difference spectroscopy. Journal of Crystal Growth, 195 (1). 205-210 doi:10.1016/s0022-0248(98)00637-x

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Reference TypeJournal (article/letter/editorial)
TitleMOVPE growth of single monolayers of InAs in GaAs studied by time-resolved reflectance difference spectroscopy
JournalJournal of Crystal Growth
AuthorsGupta, J.A.Author
Watkins, S.P.Author
Arès, R.Author
Soerensen, G.Author
Year1998 (December)Volume195
Issue1
PublisherElsevier BV
DOIdoi:10.1016/s0022-0248(98)00637-xSearch in ResearchGate
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Mindat Ref. ID2844304Long-form Identifiermindat:1:5:2844304:5
GUID0
Full ReferenceGupta, J.A., Watkins, S.P., Arès, R., Soerensen, G. (1998) MOVPE growth of single monolayers of InAs in GaAs studied by time-resolved reflectance difference spectroscopy. Journal of Crystal Growth, 195 (1). 205-210 doi:10.1016/s0022-0248(98)00637-x
Plain TextGupta, J.A., Watkins, S.P., Arès, R., Soerensen, G. (1998) MOVPE growth of single monolayers of InAs in GaAs studied by time-resolved reflectance difference spectroscopy. Journal of Crystal Growth, 195 (1). 205-210 doi:10.1016/s0022-0248(98)00637-x
In(1998, December) Journal of Crystal Growth Vol. 195 (1) Elsevier BV

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Arès, R., Hu, J., Yeo, P., Watkins, S.P. (1998) Time-resolved reflectance difference spectroscopy of InAs growth under alternating flow conditions. Journal of Crystal Growth, 195 (1). 234-241 doi:10.1016/s0022-0248(98)00707-6
Gupta, J.A., Woicik, J.C., Watkins, S.P., Miyano, K.E., Pellegrino, J.G., Crozier, E.D. (1998) An X-ray standing wave study of ultrathin InAs films in GaAs(001) grown by atomic layer epitaxy. Journal of Crystal Growth, 195 (1). 34-40 doi:10.1016/s0022-0248(98)00636-8
Wang, C.X., Pitts, O.J., Watkins, S.P. (2003) Time-resolved reflectance difference spectroscopy study of Sb- and As-terminated InP(100) surfaces. Journal of Crystal Growth, 248. 259-264 doi:10.1016/s0022-0248(02)01921-8
Watkins, S.P., Arès, R., Soerensen, G., Zhong, W., Tran, C.A., Bryce, J.E., Bolognesi, C.R. (1997) Atomic force microscopy study of morphology and dislocation structure of InAs and GaSb grown on highly mismatched substrates. Journal of Crystal Growth, 170 (1). 788-793 doi:10.1016/s0022-0248(96)00633-1
Arès, R., Watkins, S.P., Tran, C.A. (1997) Breakdown of self-limiting behaviour in heterostructures grown by atomic layer epitaxy. Journal of Crystal Growth, 170 (1). 574-578 doi:10.1016/s0022-0248(96)00632-x
Mihopoulos, Theodoros G, Gupta, Vijay, Jensen, Klavs F (1998) A reaction-transport model for AlGaN MOVPE growth. Journal of Crystal Growth, 195 (1). 733-739 doi:10.1016/s0022-0248(98)00649-6
Kozodoy, P, Keller, S, DenBaars, S.P, Mishra, U.K (1998) MOVPE growth and characterization of Mg-doped GaN. Journal of Crystal Growth, 195 (1). 265-269 doi:10.1016/s0022-0248(98)00676-9
Saito, Hisao, Makimoto, Toshiki, Kobayashi, Naoki (1998) MOVPE growth of strained InGaAsN/GaAs quantum wells. Journal of Crystal Growth, 195 (1). 416-420 doi:10.1016/s0022-0248(98)00666-6
Zettler, J.-T., Haberland, K., Zorn, M., Pristovsek, M., Richter, W., Kurpas, P., Weyers, M. (1998) Real-time monitoring of MOVPE device growth by reflectance anisotropy spectroscopy and related optical techniques. Journal of Crystal Growth, 195 (1). 151-162 doi:10.1016/s0022-0248(98)00700-3
Kurpas, P, Arens, M, Gutsche, D, Richter, E, Weyers, M (1998) Growth monitoring of GaInP/GaAs heterojunction bipolar transistors by reflectance anisotropy spectroscopy. Journal of Crystal Growth, 195 (1). 217-222 doi:10.1016/s0022-0248(98)00583-1
Kobayashi, Yasuyuki, Akasaka, Tetsuya, Kobayashi, Naoki (1998) In-situ monitoring of GaN MOVPE by shallow-angle reflectance using ultraviolet light. Journal of Crystal Growth, 195 (1). 187-191 doi:10.1016/s0022-0248(98)00627-7
 
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