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Suemune, I., Obinata, T., Uesugi, K., Suzuki, H., Kumano, H., Nashiki, H., Nakahara, J. (1997) Growth of zincblende superlattices and their heterointerface properties. Journal of Crystal Growth, 170 (1). 480-484 doi:10.1016/s0022-0248(96)00546-5

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Reference TypeJournal (article/letter/editorial)
TitleGrowth of zincblende superlattices and their heterointerface properties
JournalJournal of Crystal Growth
AuthorsSuemune, I.Author
Obinata, T.Author
Uesugi, K.Author
Suzuki, H.Author
Kumano, H.Author
Nashiki, H.Author
Nakahara, J.Author
Year1997 (January)Volume170
Issue1
PublisherElsevier BV
DOIdoi:10.1016/s0022-0248(96)00546-5Search in ResearchGate
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Mindat Ref. ID2831311Long-form Identifiermindat:1:5:2831311:5
GUID0
Full ReferenceSuemune, I., Obinata, T., Uesugi, K., Suzuki, H., Kumano, H., Nashiki, H., Nakahara, J. (1997) Growth of zincblende superlattices and their heterointerface properties. Journal of Crystal Growth, 170 (1). 480-484 doi:10.1016/s0022-0248(96)00546-5
Plain TextSuemune, I., Obinata, T., Uesugi, K., Suzuki, H., Kumano, H., Nashiki, H., Nakahara, J. (1997) Growth of zincblende superlattices and their heterointerface properties. Journal of Crystal Growth, 170 (1). 480-484 doi:10.1016/s0022-0248(96)00546-5
In(1997, January) Journal of Crystal Growth Vol. 170 (1) Elsevier BV

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Suemune, I., Uesugi, K., Shimozawa, T., Kumano, H., Machida, H., Shimoyama, N. (2002) Erbium-doped GaP grown by MOMBE and their optical properties. Journal of Crystal Growth, 237. 1423-1427 doi:10.1016/s0022-0248(01)02232-1
Kumano, Hidekazu, Nashiki, Hiroyuki, Suemune, Ikuo, Arita, Munetaka, Obinata, Toshio, Suzuki, Hideki, Uesugi, Katsuhiro, Nakahara, Jun'ichiro (1997) Excitonic properties of zinc-blende ZnSe/MgS superlattices studied by reflection spectroscopy. Physical Review B, 55 (7) 4449-4455 doi:10.1103/physrevb.55.4449
Uesugi, Katsuhiro, Suzuki, Hideki, Nashiki, Hiroyuki, Obinata, Toshio, Suemune, Ikuo, Kumano, Hidekazu, Nakahara, Jun'ichiro (1997) Atomic force microscopy study of heteroepitaxy processes by metalorganic vapour phase epitaxy. Applied Surface Science, 113. 371-376 doi:10.1016/s0169-4332(96)00833-1
Nashiki, Hiroyuki, Suemune, Ikuo, Kumano, Hidekazu, Suzuki, Hideki, Obinata, Toshio, Uesugi, Katsuhiro, Nakahara, Junā€™ichiro (1997) Excitonic luminescence up to room temperature in a ZnSe/MgS superlattice. Applied Physics Letters, 70 (18). 2350-2352 doi:10.1063/1.118867
Ashrafi, A.A, Ueta, A, Kumano, H, Suemune, I (2000) Role of ZnS buffer layers in growth of zincblende ZnO on GaAs substrates by metalorganic molecular-beam epitaxy. Journal of Crystal Growth, 221 (1). 435-439 doi:10.1016/s0022-0248(00)00732-6
Uesugi, Katsuhiro, Obinata, Toshio, Suemune, Ikuo, Kumano, Hidekazu, Nakahara, Junā€™ichiro (1996) Epitaxial growth of zincā€blende ZnSe/MgS superlattices on (001) GaAs. Applied Physics Letters, 68 (6). 844-846 doi:10.1063/1.116552
Suemune, I., Yoshida, K., Kumano, H., Tawara, T., Ueta, A., Tanaka, S. (2003) IIā€“VI quantum dots grown by MOVPE. Journal of Crystal Growth, 248. 301-309 doi:10.1016/s0022-0248(02)01862-6
Suzuki, Hideki, Nashiki, Hiroyuki, Obinata, Toshio, Kumano, Hidekazu, Suemune, Ikuo (1996) Initial Growth Processes of ZnSe on Cleaned GaAs(001) Surfaces by Metalorganic Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 35. doi:10.1143/jjap.35.l1006
Honda, T., Lim, S.W., Inoue, K., Hara, K., Munekata, H., Kukimoto, H., Koyama, F., Iga, K. (1997) Diode characteristics of Li3N-diffused ZnSe grown by MOVPE. Journal of Crystal Growth, 170 (1). 503-506 doi:10.1016/s0022-0248(96)00616-1
Kim, Bong-Joong, Ok, Y.-W., Seong, T.-Y., Ashrafi, A.B.M.A., Kumano, H., Suemune, I. (2003) Structural properties of CdO layers grown on GaAs (001) substrates by metalorganic molecular beam epitaxy. Journal of Crystal Growth, 252 (1). 219-225 doi:10.1016/s0022-0248(02)02521-6
Suzuki, Hideki, Obinata, Toshio, Nashiki, Hiroyuki, Uesugi, Katsuhiro, Suemune, Ikuo (1996) Purge Effect on Heterointerfaces of ZnSe/MgS Superlattices Grown by Metalorganic Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 35. doi:10.1143/jjap.35.l1658
 
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