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Pickett, Nigel L., Foster, Douglas F., Cole-Hamilton, David J. (1997) Studies of prereactions during MOVPE growth of wide band-gap semiconductors: the effect of pyridine upon the gas-phase reactions between H2S and Me2Zn. Journal of Crystal Growth, 170 (1). 476-479 doi:10.1016/s0022-0248(96)00647-1

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Reference TypeJournal (article/letter/editorial)
TitleStudies of prereactions during MOVPE growth of wide band-gap semiconductors: the effect of pyridine upon the gas-phase reactions between H2S and Me2Zn
JournalJournal of Crystal Growth
AuthorsPickett, Nigel L.Author
Foster, Douglas F.Author
Cole-Hamilton, David J.Author
Year1997 (January)Volume170
Issue1
PublisherElsevier BV
DOIdoi:10.1016/s0022-0248(96)00647-1Search in ResearchGate
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Mindat Ref. ID2831812Long-form Identifiermindat:1:5:2831812:9
GUID0
Full ReferencePickett, Nigel L., Foster, Douglas F., Cole-Hamilton, David J. (1997) Studies of prereactions during MOVPE growth of wide band-gap semiconductors: the effect of pyridine upon the gas-phase reactions between H2S and Me2Zn. Journal of Crystal Growth, 170 (1). 476-479 doi:10.1016/s0022-0248(96)00647-1
Plain TextPickett, Nigel L., Foster, Douglas F., Cole-Hamilton, David J. (1997) Studies of prereactions during MOVPE growth of wide band-gap semiconductors: the effect of pyridine upon the gas-phase reactions between H2S and Me2Zn. Journal of Crystal Growth, 170 (1). 476-479 doi:10.1016/s0022-0248(96)00647-1
In(1997, January) Journal of Crystal Growth Vol. 170 (1) Elsevier BV

See Also

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Pickett, Nigel L., Foster, Douglas F., Cole-Hamilton, David J. (1996) Effect of pyridine upon gas-phase reactions between H2S and Me2Cd; control of nanoparticle growth. Journal of Materials Chemistry, 6. 507pp. doi:10.1039/jm9960600507
Foster, Douglas F, Pickett, Nigel L, Hails, Janet E, Cole-Hamilton, David J (1998) Gas-Phase Thermal Decomposition Mechanism of the Important Movpe Precursor t-Bu2Se. Phosphorus, Sulfur, and Silicon and the Related Elements, 136. 427-430 doi:10.1080/10426509808545970
Pickett, Nigel L., Riddell, Frank. G., Foster, Douglas F., Cole-Hamilton, David J., Fryer, John R. (1997) Gas-phase synthesis of nanoparticles of group 12 chalcogenides. Journal of Materials Chemistry, 7. 1855-1865 doi:10.1039/a701608e
Foster, Douglas F., Glidewell, Christopher, Cole-Hamilton, David J., Povey, Ian M., Hoare, Richard D., Pemble, Martyn E. (1994) Do gas phase adducts form during metalorganic vapour phase epitaxial growth of gallium arsenide?. Journal of Crystal Growth, 145 (1). 104-112 doi:10.1016/0022-0248(94)91036-7
Duan, Shu-kun, Lu, Da-cheng (1997) Phase diagrams for the MOVPE growth of ZnTe and ZnSeTe. Journal of Crystal Growth, 170 (1). 514-517 doi:10.1016/s0022-0248(96)00526-x
Foster, Douglas F., Bell, William, Stevenson, John, Cole-Hamilton, David J., Hails, Janet E. (1994) Mechanisms of decomposition of group VI dialkyls and alkylhydrides in the gas phase from studies of designed precursors. Journal of Crystal Growth, 145 (1). 520-529 doi:10.1016/0022-0248(94)91101-0
Mullin, J.B., Cole-Hamilton, D.J., Irvine, S.J.C., Hails, J.E., Giess, J., Gough, J.S. (1990) MOVPE of narrow and wide gap II–VI compounds. Journal of Crystal Growth, 101 (1). 1-13 doi:10.1016/0022-0248(90)90929-f
Theodoropoulos, C., Ingle, N.K., Mountziaris, T.J. (1997) Computational studies of the transient behavior of horizontal MOVPE reactors. Journal of Crystal Growth, 170 (1). 72-76 doi:10.1016/s0022-0248(96)00637-9
Moon, R.L. (1997) MOVPE: is there any other technology for optoelectronics?. Journal of Crystal Growth, 170 (1). 1-10 doi:10.1016/s0022-0248(96)00731-2
Hageman, P.R., te Nijenhuis, J., Anders, M.J., Giling, L.J. (1997) Dependence of impurity incorporation upon substrate misorientation during GaAs growth by metalorganic vapour phase epitaxy. Journal of Crystal Growth, 170 (1). 270-275 doi:10.1016/s0022-0248(96)00509-x
Hails, Janet E., Cole-Hamilton, David J., Ewan, A., McQueen, D. (1998) Gas-phase decomposition of MeTeBut and its relevance to the MOVPE of mercury cadmium telluride. Journal of Crystal Growth, 183 (4). 594-603 doi:10.1016/s0022-0248(97)00505-8
 
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