Watch the Dallas Symposium LIVE, and fundraiser auction
Ticket proceeds support mindat.org! - click here...
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Goto, Hideo, Takemura, Masaaki, Ido, Toshiyuki (1997) Deep hole trap level of nitrogen-doped ZnSe grown by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 170 (1). 510-513 doi:10.1016/s0022-0248(96)00540-4

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleDeep hole trap level of nitrogen-doped ZnSe grown by metalorganic vapor phase epitaxy
JournalJournal of Crystal Growth
AuthorsGoto, HideoAuthor
Takemura, MasaakiAuthor
Ido, ToshiyukiAuthor
Year1997 (January)Volume170
Issue1
PublisherElsevier BV
DOIdoi:10.1016/s0022-0248(96)00540-4Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID2831279Long-form Identifiermindat:1:5:2831279:0
GUID0
Full ReferenceGoto, Hideo, Takemura, Masaaki, Ido, Toshiyuki (1997) Deep hole trap level of nitrogen-doped ZnSe grown by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 170 (1). 510-513 doi:10.1016/s0022-0248(96)00540-4
Plain TextGoto, Hideo, Takemura, Masaaki, Ido, Toshiyuki (1997) Deep hole trap level of nitrogen-doped ZnSe grown by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 170 (1). 510-513 doi:10.1016/s0022-0248(96)00540-4
In(1997, January) Journal of Crystal Growth Vol. 170 (1) Elsevier BV

See Also

These are possibly similar items as determined by title/reference text matching only.

Goto, Hideo, Tanoi, Tsutomu, Takemura, Masaaki, Ido, Toshiyuki (1995) Deep-Level Transient Spectroscopy of Nitrogen-Doped ZnSe Grown by Metalorganic Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 34. doi:10.1143/jjap.34.l827
Goto, Hideo, Ido, Toshiyuki, Takatsuka, Akio (2000) Electrical properties of Sb-doped ZnSe grown by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 214. 529-532 doi:10.1016/s0022-0248(00)00145-7
Takemura, Masaaki, Goto, Hideo, Ido, Toshiyuki (1997) Metalorganic Vapor Phase Epitaxy of Sb-Doped ZnSe. Japanese Journal of Applied Physics, 36. doi:10.1143/jjap.36.l540
Kawahara, Toshio, Ohbuchi, Yasuhiro, Tabuchi, Norikazu, Morimoto, Jun, Goto, Hideo, Ido, Toshiyuki (2000) Deep levels in Sb-doped ZnSe fabricated by metalorganic vapor-phase epitaxy. Journal of Crystal Growth, 221 (1). 398-403 doi:10.1016/s0022-0248(00)00721-1
Ido, Toshiyuki, Goto, Hideo (2003) Deep hole trap levels of Sb-doped ZnSe grown by MOVPE. Journal of Crystal Growth, 259 (3). 257-261 doi:10.1016/j.jcrysgro.2003.07.019
Tahashi, Masahiro, Wu, Zunyi, Goto, Hideo, Ido, Toshiyuki (2008) Growth and Characterization of Vanadium-Doped ZnSe by Metalorganic Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 47 (12) 8726-8729 doi:10.1143/jjap.47.8726
Taudt, W., Hardt, A., Lampe, S., Hamadeh, H., Heuken, M. (1997) Nitrogen as carrier gas for the growth of ZnSe and ZnSe:N in plasma enhanced metalorganic vapor phase epitaxy. Journal of Crystal Growth, 170 (1). 491-496 doi:10.1016/s0022-0248(96)00594-5
Ekawa, Mitsuru, Fujii, Takuya, Tanahashi, Toshiyuki (1997) Effect of incorporation efficiency on dopant behaviors in selective-area metalorganic vapor phase epitaxy. Journal of Crystal Growth, 170 (1). 685-688 doi:10.1016/s0022-0248(96)00574-x
Rettig, R., Marschner, T., Tapfer, L., Stolz, W., Göbel, E.O. (1997) Growth and structural properties of intentionally disordered superlattice structures grown by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 170 (1). 748-751 doi:10.1016/s0022-0248(96)00511-8
Ido, Toshiyuki, Goto, Hideo, Shii, Yoshihisa, Shimada, Makoto, Kojima, Yuya (2001) MOVPE growth and characterization of Mn-doped ZnSe films. Journal of Crystal Growth, 233 (1). 108-111 doi:10.1016/s0022-0248(01)01559-7
Hara, Shinjiroh, Motohisa, Junichi, Fukui, Takashi (1997) Formation and characterization of InGaAs strained quantum wires on GaAs multiatomic steps grown by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 170 (1). 579-584 doi:10.1016/s0022-0248(96)00636-7
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: August 14, 2025 19:38:41
Go to top of page