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Ido, Toshiyuki, Goto, Hideo, Shii, Yoshihisa, Shimada, Makoto, Kojima, Yuya (2001) MOVPE growth and characterization of Mn-doped ZnSe films. Journal of Crystal Growth, 233 (1). 108-111 doi:10.1016/s0022-0248(01)01559-7

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Reference TypeJournal (article/letter/editorial)
TitleMOVPE growth and characterization of Mn-doped ZnSe films
JournalJournal of Crystal Growth
AuthorsIdo, ToshiyukiAuthor
Goto, HideoAuthor
Shii, YoshihisaAuthor
Shimada, MakotoAuthor
Kojima, YuyaAuthor
Year2001 (November)Volume233
Issue1
PublisherElsevier BV
DOIdoi:10.1016/s0022-0248(01)01559-7Search in ResearchGate
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Mindat Ref. ID2863128Long-form Identifiermindat:1:5:2863128:8
GUID0
Full ReferenceIdo, Toshiyuki, Goto, Hideo, Shii, Yoshihisa, Shimada, Makoto, Kojima, Yuya (2001) MOVPE growth and characterization of Mn-doped ZnSe films. Journal of Crystal Growth, 233 (1). 108-111 doi:10.1016/s0022-0248(01)01559-7
Plain TextIdo, Toshiyuki, Goto, Hideo, Shii, Yoshihisa, Shimada, Makoto, Kojima, Yuya (2001) MOVPE growth and characterization of Mn-doped ZnSe films. Journal of Crystal Growth, 233 (1). 108-111 doi:10.1016/s0022-0248(01)01559-7
In(2001, November) Journal of Crystal Growth Vol. 233 (1) Elsevier BV

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Goto, Hideo, Ido, Toshiyuki, Takatsuka, Akio (2000) Electrical properties of Sb-doped ZnSe grown by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 214. 529-532 doi:10.1016/s0022-0248(00)00145-7
Ido, Toshiyuki, Goto, Hideo (2003) Deep hole trap levels of Sb-doped ZnSe grown by MOVPE. Journal of Crystal Growth, 259 (3). 257-261 doi:10.1016/j.jcrysgro.2003.07.019
Goto, Hideo, Takemura, Masaaki, Ido, Toshiyuki (1997) Deep hole trap level of nitrogen-doped ZnSe grown by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 170 (1). 510-513 doi:10.1016/s0022-0248(96)00540-4
Kawahara, Toshio, Ohbuchi, Yasuhiro, Tabuchi, Norikazu, Morimoto, Jun, Goto, Hideo, Ido, Toshiyuki (2000) Deep levels in Sb-doped ZnSe fabricated by metalorganic vapor-phase epitaxy. Journal of Crystal Growth, 221 (1). 398-403 doi:10.1016/s0022-0248(00)00721-1
Tahashi, Masahiro, Ito, Shinsuke, Ido, Toshiyuki, Goto, Hideo (2005) Epitaxial Growth of Vanadium-Doped ZnSe by MOVPE. MATERIALS TRANSACTIONS, 46 (8). 1908-1910 doi:10.2320/matertrans.46.1908
Tahashi, Masahiro, Goto, Hideo, Ido, Toshiyuki (2007) MOVPE growth, and magnetic and crystallographic studies of Zn1−xVxSe. Journal of Crystal Growth, 298. 453-456 doi:10.1016/j.jcrysgro.2006.10.055
Song, J.S, Chang, J.H, Cho, M.W, Hanada, T, Yao, T (2001) Growth and characterization of ZnSe/BeTe superlattices. Journal of Crystal Growth, 229 (1). 104-108 doi:10.1016/s0022-0248(01)01102-2
Sankar, N., Ramachandran, K., Sanjeeviraja, C. (2002) Growth and characterization of ZnSe and phosphorus-doped ZnSe single crystals. Journal of Crystal Growth, 235 (1). 195-200 doi:10.1016/s0022-0248(01)02044-9
Tahashi, Masahiro, Wu, Zunyi, Goto, Hideo, Ido, Toshiyuki (2008) Growth and Characterization of Vanadium-Doped ZnSe by Metalorganic Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 47 (12) 8726-8729 doi:10.1143/jjap.47.8726
Kawahara, Toshio, Ohbuchi, Yasuhiro, Morimoto, Jun, Goto, Hideo, Ido, Toshiyuki (2001) Photoacoustic spectra of Sb-doped ZnSe. Materials Letters, 50. 347-352 doi:10.1016/s0167-577x(01)00252-x
Kato, Hiroyuki, Udono, Haruhiko, Kikuma, Isao (2001) Growth and characterization of Br-doped ZnSe single crystals grown by a vertical sublimation method. Journal of Crystal Growth, 229 (1). 79-86 doi:10.1016/s0022-0248(01)01098-3
 
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