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Tahashi, Masahiro, Ito, Shinsuke, Ido, Toshiyuki, Goto, Hideo (2005) Epitaxial Growth of Vanadium-Doped ZnSe by MOVPE. MATERIALS TRANSACTIONS, 46 (8). 1908-1910 doi:10.2320/matertrans.46.1908

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Reference TypeJournal (article/letter/editorial)
TitleEpitaxial Growth of Vanadium-Doped ZnSe by MOVPE
JournalMATERIALS TRANSACTIONS
AuthorsTahashi, MasahiroAuthor
Ito, ShinsukeAuthor
Ido, ToshiyukiAuthor
Goto, HideoAuthor
Year2005Volume46
Issue8
PublisherJapan Institute of Metals
DOIdoi:10.2320/matertrans.46.1908Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID7778278Long-form Identifiermindat:1:5:7778278:4
GUID0
Full ReferenceTahashi, Masahiro, Ito, Shinsuke, Ido, Toshiyuki, Goto, Hideo (2005) Epitaxial Growth of Vanadium-Doped ZnSe by MOVPE. MATERIALS TRANSACTIONS, 46 (8). 1908-1910 doi:10.2320/matertrans.46.1908
Plain TextTahashi, Masahiro, Ito, Shinsuke, Ido, Toshiyuki, Goto, Hideo (2005) Epitaxial Growth of Vanadium-Doped ZnSe by MOVPE. MATERIALS TRANSACTIONS, 46 (8). 1908-1910 doi:10.2320/matertrans.46.1908
In(2005) MATERIALS TRANSACTIONS Vol. 46 (8) Japan Institute of Metals

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Tahashi, Masahiro, Wu, Zunyi, Goto, Hideo, Ido, Toshiyuki (2008) Growth and Characterization of Vanadium-Doped ZnSe by Metalorganic Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 47 (12) 8726-8729 doi:10.1143/jjap.47.8726
Tahashi, Masahiro, Wu, Zunyi, Goto, Hideo, Hayashi, Youji, Ido, Toshiyuki (2009) Effect of Vanadium Doping on Structure and Properties of ZnSe Films Prepared by Metal-Organic Vapor Phase Epitaxy. MATERIALS TRANSACTIONS, 50 (4). 719-722 doi:10.2320/matertrans.mbw200812
Tahashi, Masahiro, Goto, Hideo, Ido, Toshiyuki (2007) Metal-organic vapor phase epitaxy growth and crystallographic study of vanadium-doped ZnSe. physica status solidi (b), 244 (5). 1602-1606 doi:10.1002/pssb.200675107
Goto, Hideo, Tahashi, Masahiro, Ido, Toshiyuki (2007) Sb-treatment effect of GaAs substrate on Sb-doped Cd1–xMnxTe growth by MOVPE. physica status solidi (b), 244 (5). 1691-1693 doi:10.1002/pssb.200675134
Tahashi, Masahiro, Goto, Hideo, Ido, Toshiyuki (2007) MOVPE growth, and magnetic and crystallographic studies of Zn1−xVxSe. Journal of Crystal Growth, 298. 453-456 doi:10.1016/j.jcrysgro.2006.10.055
Tahashi, Masahiro, Iinuma, Kenji, Goto, Hideo, Yoshino, Kenji, Takahashi, Makoto, Ido, Toshiyuki (2012) Growth of Cu(In,Ga)Se2 Films Selenized Using Dimethylselenium. MATERIALS TRANSACTIONS, 53 (6). 1169-1171 doi:10.2320/matertrans.m2011355
Ido, Toshiyuki, Goto, Hideo (2003) Deep hole trap levels of Sb-doped ZnSe grown by MOVPE. Journal of Crystal Growth, 259 (3). 257-261 doi:10.1016/j.jcrysgro.2003.07.019
Goto, Hideo, Sawada, Satomi, Tahashi, Masahiro, Ido, Toshiyuki (2005) Antimony Treatment Effect on Cd1-xMnxTe Growth on GaAs by Metal-Organic Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 44 (1) 147-148 doi:10.1143/jjap.44.147
Ido, Toshiyuki, Goto, Hideo, Shii, Yoshihisa, Shimada, Makoto, Kojima, Yuya (2001) MOVPE growth and characterization of Mn-doped ZnSe films. Journal of Crystal Growth, 233 (1). 108-111 doi:10.1016/s0022-0248(01)01559-7
Tahashi, Masahiro, Uzura, Shingo, Goto, Hideo, Ido, Toshiyuki (2008) Heteroepitaxial growth of CdTe films on (100) GaAs treated with Sb by low-pressure metalorganic vapor phase epitaxy. Journal of Crystal Growth, 310 (15). 3440-3442 doi:10.1016/j.jcrysgro.2008.05.014
Tahashi, Masahiro, Shirai, Nobuo, Kawazoe, Ken, Goto, Hideo, Ido, Toshiyuki (2007) Electrical Conduction of Composites of Tin Oxide and Zinc Oxide in Hydrogen. Japanese Journal of Applied Physics, 46 (12) 7632-7634 doi:10.1143/jjap.46.7632
 
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