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Tahashi, Masahiro, Uzura, Shingo, Goto, Hideo, Ido, Toshiyuki (2008) Heteroepitaxial growth of CdTe films on (100) GaAs treated with Sb by low-pressure metalorganic vapor phase epitaxy. Journal of Crystal Growth, 310 (15). 3440-3442 doi:10.1016/j.jcrysgro.2008.05.014

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Reference TypeJournal (article/letter/editorial)
TitleHeteroepitaxial growth of CdTe films on (100) GaAs treated with Sb by low-pressure metalorganic vapor phase epitaxy
JournalJournal of Crystal Growth
AuthorsTahashi, MasahiroAuthor
Uzura, ShingoAuthor
Goto, HideoAuthor
Ido, ToshiyukiAuthor
Year2008 (July)Volume310
Issue15
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2008.05.014Search in ResearchGate
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Mindat Ref. ID2891712Long-form Identifiermindat:1:5:2891712:4
GUID0
Full ReferenceTahashi, Masahiro, Uzura, Shingo, Goto, Hideo, Ido, Toshiyuki (2008) Heteroepitaxial growth of CdTe films on (100) GaAs treated with Sb by low-pressure metalorganic vapor phase epitaxy. Journal of Crystal Growth, 310 (15). 3440-3442 doi:10.1016/j.jcrysgro.2008.05.014
Plain TextTahashi, Masahiro, Uzura, Shingo, Goto, Hideo, Ido, Toshiyuki (2008) Heteroepitaxial growth of CdTe films on (100) GaAs treated with Sb by low-pressure metalorganic vapor phase epitaxy. Journal of Crystal Growth, 310 (15). 3440-3442 doi:10.1016/j.jcrysgro.2008.05.014
In(2008, July) Journal of Crystal Growth Vol. 310 (15) Elsevier BV

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Tahashi, Masahiro, Wu, Zunyi, Goto, Hideo, Ido, Toshiyuki (2008) Growth and Characterization of Vanadium-Doped ZnSe by Metalorganic Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 47 (12) 8726-8729 doi:10.1143/jjap.47.8726
Goto, Hideo, Sawada, Satomi, Tahashi, Masahiro, Ido, Toshiyuki (2005) Antimony Treatment Effect on Cd1-xMnxTe Growth on GaAs by Metal-Organic Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 44 (1) 147-148 doi:10.1143/jjap.44.147
Tahashi, Masahiro, Goto, Hideo, Ido, Toshiyuki (2007) MOVPE growth, and magnetic and crystallographic studies of Zn1−xVxSe. Journal of Crystal Growth, 298. 453-456 doi:10.1016/j.jcrysgro.2006.10.055
Goto, Hideo, Ido, Toshiyuki, Takatsuka, Akio (2000) Electrical properties of Sb-doped ZnSe grown by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 214. 529-532 doi:10.1016/s0022-0248(00)00145-7
Goto, Hideo, Tahashi, Masahiro, Ido, Toshiyuki (2007) Sb-treatment effect of GaAs substrate on Sb-doped Cd1–xMnxTe growth by MOVPE. physica status solidi (b), 244 (5). 1691-1693 doi:10.1002/pssb.200675134
Tahashi, Masahiro, Goto, Hideo, Ido, Toshiyuki (2007) Metal-organic vapor phase epitaxy growth and crystallographic study of vanadium-doped ZnSe. physica status solidi (b), 244 (5). 1602-1606 doi:10.1002/pssb.200675107
Kawahara, Toshio, Ohbuchi, Yasuhiro, Tabuchi, Norikazu, Morimoto, Jun, Goto, Hideo, Ido, Toshiyuki (2000) Deep levels in Sb-doped ZnSe fabricated by metalorganic vapor-phase epitaxy. Journal of Crystal Growth, 221 (1). 398-403 doi:10.1016/s0022-0248(00)00721-1
Tahashi, Masahiro, Wu, Zunyi, Goto, Hideo, Hayashi, Youji, Ido, Toshiyuki (2009) Effect of Vanadium Doping on Structure and Properties of ZnSe Films Prepared by Metal-Organic Vapor Phase Epitaxy. MATERIALS TRANSACTIONS, 50 (4). 719-722 doi:10.2320/matertrans.mbw200812
Goto, Hideo, Takemura, Masaaki, Ido, Toshiyuki (1997) Deep hole trap level of nitrogen-doped ZnSe grown by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 170 (1). 510-513 doi:10.1016/s0022-0248(96)00540-4
Takemura, Masaaki, Goto, Hideo, Ido, Toshiyuki (1997) Metalorganic Vapor Phase Epitaxy of Sb-Doped ZnSe. Japanese Journal of Applied Physics, 36. doi:10.1143/jjap.36.l540
Yuan, Hairong, Chua, Soo Jin, Miao, Zhonglin, Dong, Jianrong, Wang, Yanjun (2004) Growth and structural properties of thick InAs films on GaAs with low-pressure metalorganic vapor phase epitaxy. Journal of Crystal Growth, 273 (1). 63-67 doi:10.1016/j.jcrysgro.2004.07.088
 
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