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Goto, Hideo, Ido, Toshiyuki, Takatsuka, Akio (2000) Electrical properties of Sb-doped ZnSe grown by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 214. 529-532 doi:10.1016/s0022-0248(00)00145-7

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Reference TypeJournal (article/letter/editorial)
TitleElectrical properties of Sb-doped ZnSe grown by metalorganic vapor phase epitaxy
JournalJournal of Crystal Growth
AuthorsGoto, HideoAuthor
Ido, ToshiyukiAuthor
Takatsuka, AkioAuthor
Year2000 (June)Volume214
PublisherElsevier BV
DOIdoi:10.1016/s0022-0248(00)00145-7Search in ResearchGate
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Mindat Ref. ID2854358Long-form Identifiermindat:1:5:2854358:5
GUID0
Full ReferenceGoto, Hideo, Ido, Toshiyuki, Takatsuka, Akio (2000) Electrical properties of Sb-doped ZnSe grown by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 214. 529-532 doi:10.1016/s0022-0248(00)00145-7
Plain TextGoto, Hideo, Ido, Toshiyuki, Takatsuka, Akio (2000) Electrical properties of Sb-doped ZnSe grown by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 214. 529-532 doi:10.1016/s0022-0248(00)00145-7
In(2000) Journal of Crystal Growth Vol. 214. Elsevier BV

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Kawahara, Toshio, Ohbuchi, Yasuhiro, Tabuchi, Norikazu, Morimoto, Jun, Goto, Hideo, Ido, Toshiyuki (2000) Deep levels in Sb-doped ZnSe fabricated by metalorganic vapor-phase epitaxy. Journal of Crystal Growth, 221 (1). 398-403 doi:10.1016/s0022-0248(00)00721-1
Goto, Hideo, Takemura, Masaaki, Ido, Toshiyuki (1997) Deep hole trap level of nitrogen-doped ZnSe grown by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 170 (1). 510-513 doi:10.1016/s0022-0248(96)00540-4
Takemura, Masaaki, Goto, Hideo, Ido, Toshiyuki (1997) Metalorganic Vapor Phase Epitaxy of Sb-Doped ZnSe. Japanese Journal of Applied Physics, 36. doi:10.1143/jjap.36.l540
Goto, Hideo, Tanoi, Tsutomu, Takemura, Masaaki, Ido, Toshiyuki (1995) Deep-Level Transient Spectroscopy of Nitrogen-Doped ZnSe Grown by Metalorganic Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 34. doi:10.1143/jjap.34.l827
Tahashi, Masahiro, Wu, Zunyi, Goto, Hideo, Ido, Toshiyuki (2008) Growth and Characterization of Vanadium-Doped ZnSe by Metalorganic Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 47 (12) 8726-8729 doi:10.1143/jjap.47.8726
Ido, Toshiyuki, Goto, Hideo (2003) Deep hole trap levels of Sb-doped ZnSe grown by MOVPE. Journal of Crystal Growth, 259 (3). 257-261 doi:10.1016/j.jcrysgro.2003.07.019
Tahashi, Masahiro, Uzura, Shingo, Goto, Hideo, Ido, Toshiyuki (2008) Heteroepitaxial growth of CdTe films on (100) GaAs treated with Sb by low-pressure metalorganic vapor phase epitaxy. Journal of Crystal Growth, 310 (15). 3440-3442 doi:10.1016/j.jcrysgro.2008.05.014
Yoneta, Minoru, Ohishi, Masakazu, Saito, Hiroshi, Hayashi, Manabu, Uechi, Hideo (2000) Anomaly in growth rate of Cl-doped ZnSe layer grown by molecular beam epitaxy. Journal of Crystal Growth, 214. 542-546 doi:10.1016/s0022-0248(00)00148-2
Ido, Toshiyuki, Goto, Hideo, Shii, Yoshihisa, Shimada, Makoto, Kojima, Yuya (2001) MOVPE growth and characterization of Mn-doped ZnSe films. Journal of Crystal Growth, 233 (1). 108-111 doi:10.1016/s0022-0248(01)01559-7
Lovergine, N, Prete, P, Tapfer, L, Mancini, A.M (2000) Crystalline structure of ZnSe and ZnSSe epilayers grown on (100)GaAs by metalorganic vapour-phase epitaxy. Journal of Crystal Growth, 214. 187-191 doi:10.1016/s0022-0248(00)00071-3
Fujita, Yasuhisa (2000) The reaction mechanisms for precursors in photo-assisted metalorganic-vapor-phase epitaxy growth of ZnSe. Journal of Crystal Growth, 221 (1). 382-387 doi:10.1016/s0022-0248(00)00718-1
 
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