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Izumi, Teruo (1997) Model analysis of segregation phenomena for silicon single crystal growth from the melt. Journal of Crystal Growth, 181 (3). 210-217 doi:10.1016/s0022-0248(97)00277-7

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Reference TypeJournal (article/letter/editorial)
TitleModel analysis of segregation phenomena for silicon single crystal growth from the melt
JournalJournal of Crystal Growth
AuthorsIzumi, TeruoAuthor
Year1997 (November)Volume181
Issue3
PublisherElsevier BV
DOIdoi:10.1016/s0022-0248(97)00277-7Search in ResearchGate
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Mindat Ref. ID2836613Long-form Identifiermindat:1:5:2836613:5
GUID0
Full ReferenceIzumi, Teruo (1997) Model analysis of segregation phenomena for silicon single crystal growth from the melt. Journal of Crystal Growth, 181 (3). 210-217 doi:10.1016/s0022-0248(97)00277-7
Plain TextIzumi, Teruo (1997) Model analysis of segregation phenomena for silicon single crystal growth from the melt. Journal of Crystal Growth, 181 (3). 210-217 doi:10.1016/s0022-0248(97)00277-7
In(1997, November) Journal of Crystal Growth Vol. 181 (3) Elsevier BV

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Izumi, Teruo (1995) Segregation behavior during silicon single‐crystal growth from the melt. Journal of Applied Physics, 78 (3). 1492-1494 doi:10.1063/1.360238
Tao, Y., Kou, S. (1997) Segregation reduction in vertical Bridgman crystal growth of CdZnTe. Journal of Crystal Growth, 181 (3). 301-303 doi:10.1016/s0022-0248(97)00323-0
Wang, T.H., Ciszek, T.F. (1997) Impurity segregation in LPE growth of silicon from CuAl solutions. Journal of Crystal Growth, 174 (1). 176-181 doi:10.1016/s0022-0248(96)01101-3
Nakamura, Yuichi, Kawase, Tsuyoshi, Izumi, Teruo, Murata, Kiyoshi, Shiohara, Yuh (2001) Crystal growth of REBa2Cu3Ox superconductive oxides from semi-solid melt. Journal of Crystal Growth, 229 (1). 369-373 doi:10.1016/s0022-0248(01)01183-6
Yoshida, Seikoh (1997) Electrochemical etching of a conductive GaN crystal for patterning. Journal of Crystal Growth, 181 (3). 293-296 doi:10.1016/s0022-0248(97)00366-7
Mühlbauer, A., Muiznieks, A., Virbulis, J. (1997) Analysis of the dopant segregation effects at the floating zone growth of large silicon crystals. Journal of Crystal Growth, 180 (3). 372-380 doi:10.1016/s0022-0248(97)00235-2
(1997) Subject index. Journal of Crystal Growth, 181 (4). 467-468 doi:10.1016/s0022-0248(97)90099-3
Kimura, Shigeyuki, Terashima, Kazutaka (1997) A review of measurement of thermophysical properties of silicon melt. Journal of Crystal Growth, 180 (3). 323-333 doi:10.1016/s0022-0248(97)00263-7
Haddad, F.Z., Garandet, J.P., Henry, D., Ben Hadid, H. (1999) Analysis of the unsteady segregation in crystal growth from a melt. Journal of Crystal Growth, 204 (1). 213-223 doi:10.1016/s0022-0248(99)00093-7
Biao Xu, Lun (1999) A statistical thermodynamic model for oxygen segregation during Czochralski growth of silicon single crystals. Journal of Crystal Growth, 200 (3). 414-420 doi:10.1016/s0022-0248(99)00044-5
Hong, J. (1997) Crystal growth in high gravity. Journal of Crystal Growth, 181 (4). 459-460 doi:10.1016/s0022-0248(97)00399-0
 
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