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Mühlbauer, A., Muiznieks, A., Virbulis, J. (1997) Analysis of the dopant segregation effects at the floating zone growth of large silicon crystals. Journal of Crystal Growth, 180 (3). 372-380 doi:10.1016/s0022-0248(97)00235-2

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Reference TypeJournal (article/letter/editorial)
TitleAnalysis of the dopant segregation effects at the floating zone growth of large silicon crystals
JournalJournal of Crystal Growth
AuthorsMühlbauer, A.Author
Muiznieks, A.Author
Virbulis, J.Author
Year1997 (October)Volume180
Issue3
PublisherElsevier BV
DOIdoi:10.1016/s0022-0248(97)00235-2Search in ResearchGate
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Mindat Ref. ID2836280Long-form Identifiermindat:1:5:2836280:1
GUID0
Full ReferenceMühlbauer, A., Muiznieks, A., Virbulis, J. (1997) Analysis of the dopant segregation effects at the floating zone growth of large silicon crystals. Journal of Crystal Growth, 180 (3). 372-380 doi:10.1016/s0022-0248(97)00235-2
Plain TextMühlbauer, A., Muiznieks, A., Virbulis, J. (1997) Analysis of the dopant segregation effects at the floating zone growth of large silicon crystals. Journal of Crystal Growth, 180 (3). 372-380 doi:10.1016/s0022-0248(97)00235-2
In(1997, October) Journal of Crystal Growth Vol. 180 (3) Elsevier BV

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Lan, C.W., Liang, M.C. (1997) Modulating dopant segregation in floating-zone silicon growth in magnetic fields using rotation. Journal of Crystal Growth, 180 (3). 381-387 doi:10.1016/s0022-0248(97)00264-9
Mühlbauer, Alfred, Muiznieks, Andris, Virbulis, Janis, Lüdge, Anke, Riemann, Helge (1995) Interface shape, heat transfer and fluid flow in the floating zone growth of large silicon crystals with the needle-eye technique. Journal of Crystal Growth, 151 (1). 66-79 doi:10.1016/0022-0248(95)00027-5
Virbulis, J, Wetzel, Th, Muiznieks, A, Hanna, B, Dornberger, E, Tomzig, E, Mühlbauer, A, Ammon, W.v (2001) Numerical investigation of silicon melt flow in large diameter CZ-crystal growth under the influence of steady and dynamic magnetic fields. Journal of Crystal Growth, 230 (1). 92-99 doi:10.1016/s0022-0248(01)01321-5
Surovovs, Kirils, Muiznieks, Andris, Sabanskis, Andrejs, Virbulis, Janis (2014) Hydrodynamical aspects of the floating zone silicon crystal growth process. Journal of Crystal Growth, 401. 120-123 doi:10.1016/j.jcrysgro.2013.12.066
Lan, C.W. (1996) Effect of axisymmetric magnetic fields on radial dopant segregation of floating-zone silicon growth in a mirror furnace. Journal of Crystal Growth, 169 (2). 269-278 doi:10.1016/s0022-0248(96)00307-7
Raming, G., Muižnieks, A., Mühlbauer, A. (2001) Numerical investigation of the influence of EM-fields on fluid motion and resistivity distribution during floating-zone growth of large silicon single crystals. Journal of Crystal Growth, 230 (1). 108-117 doi:10.1016/s0022-0248(01)01323-9
Mühlbauer, A, Muiznieks, A, Raming, G, Riemann, H, Lüdge, A (1999) Numerical modelling of the microscopic inhomogeneities during FZ silicon growth. Journal of Crystal Growth, 198. 107-113 doi:10.1016/s0022-0248(98)01158-0
Izumi, Teruo (1997) Model analysis of segregation phenomena for silicon single crystal growth from the melt. Journal of Crystal Growth, 181 (3). 210-217 doi:10.1016/s0022-0248(97)00277-7
Muižnieks, A., Raming, G., Mühlbauer, A., Virbulis, J., Hanna, B., Ammon, W.v. (2001) Stress-induced dislocation generation in large FZ- and CZ-silicon single crystals—numerical model and qualitative considerations. Journal of Crystal Growth, 230 (1). 305-313 doi:10.1016/s0022-0248(01)01322-7
Lan, C.W., Kou, S. (1993) Effect of rotation on radial dopant segregation in microgravity floating-zone crystal growth. Journal of Crystal Growth, 133 (3). 309-321 doi:10.1016/0022-0248(93)90170-2
Lan, C.W, Liang, M.C (1998) Modeling of dopant segregation in vertical zone-melting crystal growth. Journal of Crystal Growth, 186 (1). 203-213 doi:10.1016/s0022-0248(97)00465-x
 
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