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Raming, G., Muižnieks, A., Mühlbauer, A. (2001) Numerical investigation of the influence of EM-fields on fluid motion and resistivity distribution during floating-zone growth of large silicon single crystals. Journal of Crystal Growth, 230 (1). 108-117 doi:10.1016/s0022-0248(01)01323-9

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Reference TypeJournal (article/letter/editorial)
TitleNumerical investigation of the influence of EM-fields on fluid motion and resistivity distribution during floating-zone growth of large silicon single crystals
JournalJournal of Crystal Growth
AuthorsRaming, G.Author
Muižnieks, A.Author
Mühlbauer, A.Author
Year2001 (August)Volume230
Issue1
PublisherElsevier BV
DOIdoi:10.1016/s0022-0248(01)01323-9Search in ResearchGate
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Mindat Ref. ID2861612Long-form Identifiermindat:1:5:2861612:8
GUID0
Full ReferenceRaming, G., Muižnieks, A., Mühlbauer, A. (2001) Numerical investigation of the influence of EM-fields on fluid motion and resistivity distribution during floating-zone growth of large silicon single crystals. Journal of Crystal Growth, 230 (1). 108-117 doi:10.1016/s0022-0248(01)01323-9
Plain TextRaming, G., Muižnieks, A., Mühlbauer, A. (2001) Numerical investigation of the influence of EM-fields on fluid motion and resistivity distribution during floating-zone growth of large silicon single crystals. Journal of Crystal Growth, 230 (1). 108-117 doi:10.1016/s0022-0248(01)01323-9
In(2001, August) Journal of Crystal Growth Vol. 230 (1) Elsevier BV

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Muižnieks, A., Raming, G., Mühlbauer, A., Virbulis, J., Hanna, B., Ammon, W.v. (2001) Stress-induced dislocation generation in large FZ- and CZ-silicon single crystals—numerical model and qualitative considerations. Journal of Crystal Growth, 230 (1). 305-313 doi:10.1016/s0022-0248(01)01322-7
Ratnieks, G., Muižnieks, A., Mühlbauer, A., Raming, G. (2001) Numerical 3D study of FZ growth: dependence on growth parameters and melt instability. Journal of Crystal Growth, 230 (1). 48-56 doi:10.1016/s0022-0248(01)01318-5
Virbulis, J, Wetzel, Th, Muiznieks, A, Hanna, B, Dornberger, E, Tomzig, E, Mühlbauer, A, Ammon, W.v (2001) Numerical investigation of silicon melt flow in large diameter CZ-crystal growth under the influence of steady and dynamic magnetic fields. Journal of Crystal Growth, 230 (1). 92-99 doi:10.1016/s0022-0248(01)01321-5
Ratnieks, G, Muiznieks, A, Buligins, L, Raming, G, Mühlbauer, A, Lüdge, A, Riemann, H (2000) Influence of the three dimensionality of the HF electromagnetic field on resistivity variations in Si single crystals during FZ growth. Journal of Crystal Growth, 216 (1). 204-219 doi:10.1016/s0022-0248(00)00354-7
Larsen, T.L., Jensen, L., Lüdge, A., Riemann, H., Lemke, H. (2001) Numerical simulation of point defect transport in floating-zone silicon single crystal growth. Journal of Crystal Growth, 230 (1). 300-304 doi:10.1016/s0022-0248(01)01320-3
Mühlbauer, A, Muiznieks, A, Raming, G, Riemann, H, Lüdge, A (1999) Numerical modelling of the microscopic inhomogeneities during FZ silicon growth. Journal of Crystal Growth, 198. 107-113 doi:10.1016/s0022-0248(98)01158-0
Rudevičs, A., Muižnieks, A., Ratnieks, G., Mühlbauer, A., Wetzel, Th. (2004) Numerical study of transient behaviour of molten zone during industrial FZ process for large silicon crystal growth. Journal of Crystal Growth, 266 (1). 54-59 doi:10.1016/j.jcrysgro.2004.02.029
Mühlbauer, A., Muiznieks, A., Virbulis, J. (1997) Analysis of the dopant segregation effects at the floating zone growth of large silicon crystals. Journal of Crystal Growth, 180 (3). 372-380 doi:10.1016/s0022-0248(97)00235-2
Dold, P., Cröll, A., Lichtensteiger, M., Kaiser, Th., Benz, K.W. (2001) Floating zone growth of silicon in magnetic fields:. Journal of Crystal Growth, 231 (1). 95-106 doi:10.1016/s0022-0248(01)01491-9
Ratnieks, G., Muižnieks, A., Mühlbauer, A. (2003) Modelling of phase boundaries for large industrial FZ silicon crystal growth with the needle-eye technique. Journal of Crystal Growth, 255 (3). 227-240 doi:10.1016/s0022-0248(03)01253-3
Lan, C.W., Chian, J.H. (2001) Three-dimensional simulation of Marangoni flow and interfaces in floating-zone silicon crystal growth. Journal of Crystal Growth, 230 (1). 172-180 doi:10.1016/s0022-0248(01)01328-8
 
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