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Tournié, E, Brunet, P, Faurie, J.-P (1999) p-Type doping of ZnSe and related materials controlled by diluting nitrogen in an inert gas. Journal of Crystal Growth, 201. 938-941 doi:10.1016/s0022-0248(98)01497-3

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Reference TypeJournal (article/letter/editorial)
Titlep-Type doping of ZnSe and related materials controlled by diluting nitrogen in an inert gas
JournalJournal of Crystal Growth
AuthorsTournié, EAuthor
Brunet, PAuthor
Faurie, J.-PAuthor
Year1999 (May)Volume201
PublisherElsevier BV
DOIdoi:10.1016/s0022-0248(98)01497-3Search in ResearchGate
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Mindat Ref. ID2848488Long-form Identifiermindat:1:5:2848488:4
GUID0
Full ReferenceTournié, E, Brunet, P, Faurie, J.-P (1999) p-Type doping of ZnSe and related materials controlled by diluting nitrogen in an inert gas. Journal of Crystal Growth, 201. 938-941 doi:10.1016/s0022-0248(98)01497-3
Plain TextTournié, E, Brunet, P, Faurie, J.-P (1999) p-Type doping of ZnSe and related materials controlled by diluting nitrogen in an inert gas. Journal of Crystal Growth, 201. 938-941 doi:10.1016/s0022-0248(98)01497-3
In(1999) Journal of Crystal Growth Vol. 201. Elsevier BV

See Also

These are possibly similar items as determined by title/reference text matching only.

Tournié, E., Morhain, C., Neu, G., Faurie, J.-P. (1998) The nitrogen-related shallow donor in ZnSe : N epitaxial layers. Journal of Crystal Growth, 184. 520-524 doi:10.1016/s0022-0248(98)80108-5
Tournié, E, Bousquet, V, Faurie, J.-P (1999) Molecular-beam epitaxy of BeTe layers on GaAs substrates. Journal of Crystal Growth, 201. 494-497 doi:10.1016/s0022-0248(98)01384-0
Tournié, E., Brunet, P., Ongaretto, C., Morhain, C., Faurie, J.-P., Triboulet, R., Ndap, J.O. (1997) ZnSe homoepitaxial growth on solid-phase recrystallized substrates. Journal of Crystal Growth, 175. 577-582 doi:10.1016/s0022-0248(96)00995-5
Bousquet, V, Laügt, M, Vennéguès, P, Tournié, E, Faurie, J.-P (1999) Investigations by high-resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM) of (BeTe/ZnSe) superlattices grown by molecular beam epitaxy onto GaAs buffer epilayer. Journal of Crystal Growth, 201. 498-501 doi:10.1016/s0022-0248(98)01385-2
Bousquet, V, Tournié, E, Faurie, J.-P (1998) Defect density in ZnSe pseudomorphic layers grown by molecular beam epitaxy on to various GaAs buffer layers. Journal of Crystal Growth, 192 (1). 102-108 doi:10.1016/s0022-0248(98)00447-3
Neu, G., Morhain, C., Tournié, E., Faurie, J.P. (1998) The phosphorus acceptor in ZnSe. Journal of Crystal Growth, 184. 515-519 doi:10.1016/s0022-0248(98)80107-3
Vigué, F., Brunet, P., Lorenzini, P., Tournié, E., Faurie, J. P. (1999) Ohmic contacts to p-type ZnSe using a ZnSe/BeTe superlattice. Applied Physics Letters, 75 (21). 3345-3347 doi:10.1063/1.125346
Chauvet, C, Guénaud, C, Vennéguès, P, Tournié, E, Faurie, J.P (1999) Molecular-beam epitaxy of ZnxBe1−xSe layers on vicinal Si(001) substrates. Journal of Crystal Growth, 201. 514-517 doi:10.1016/s0022-0248(98)01390-6
Faurie, J.P., Bousquet, V., Brunet, P., Tournié, E. (1998) Hetero-epitaxial growth of BexZn1−xSe on Si(0 0 1) and GaAs(0 0 1) substrates. Journal of Crystal Growth, 184. 11-15 doi:10.1016/s0022-0248(98)80284-4
Tournié, E., Faurie, J.-P. (1999) p-type doping of Zn(Mg)BeSe epitaxial layers. Applied Physics Letters, 75 (3). 382-384 doi:10.1063/1.124382
Tournié, E., Brunet, P., Faurie, J.-P. (1999) Evidence of N-related compensating donors in lightly doped ZnSe:N. Applied Physics Letters, 74 (15). 2200-2202 doi:10.1063/1.123800
 
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