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Vigué, F., Brunet, P., Lorenzini, P., Tournié, E., Faurie, J. P. (1999) Ohmic contacts to p-type ZnSe using a ZnSe/BeTe superlattice. Applied Physics Letters, 75 (21). 3345-3347 doi:10.1063/1.125346

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Reference TypeJournal (article/letter/editorial)
TitleOhmic contacts to p-type ZnSe using a ZnSe/BeTe superlattice
JournalApplied Physics Letters
AuthorsVigué, F.Author
Brunet, P.Author
Lorenzini, P.Author
Tournié, E.Author
Faurie, J. P.Author
Year1999 (November 22)Volume75
Issue21
PublisherAIP Publishing
DOIdoi:10.1063/1.125346Search in ResearchGate
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Mindat Ref. ID8525078Long-form Identifiermindat:1:5:8525078:5
GUID0
Full ReferenceVigué, F., Brunet, P., Lorenzini, P., Tournié, E., Faurie, J. P. (1999) Ohmic contacts to p-type ZnSe using a ZnSe/BeTe superlattice. Applied Physics Letters, 75 (21). 3345-3347 doi:10.1063/1.125346
Plain TextVigué, F., Brunet, P., Lorenzini, P., Tournié, E., Faurie, J. P. (1999) Ohmic contacts to p-type ZnSe using a ZnSe/BeTe superlattice. Applied Physics Letters, 75 (21). 3345-3347 doi:10.1063/1.125346
In(1999, November) Applied Physics Letters Vol. 75 (21) AIP Publishing

See Also

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Mensz, P. M. (1994) BeTe/ZnSe graded band gap ohmic contacts top‐ZnSe. Applied Physics Letters, 64 (16). 2148-2150 doi:10.1063/1.111684
Tournié, E., Brunet, P., Faurie, J.‐P., Triboulet, R., Ndap, J. O. (1996) Molecular‐beam epitaxy of high‐quality ZnSe homo‐epitaxial layers on solid‐phase recrystallized substrates. Applied Physics Letters, 69 (21). 3221-3223 doi:10.1063/1.118016
Tournié, E., Faurie, J.-P. (1999) p-type doping of Zn(Mg)BeSe epitaxial layers. Applied Physics Letters, 75 (3). 382-384 doi:10.1063/1.124382
Tournié, E, Brunet, P, Faurie, J.-P (1999) p-Type doping of ZnSe and related materials controlled by diluting nitrogen in an inert gas. Journal of Crystal Growth, 201. 938-941 doi:10.1016/s0022-0248(98)01497-3
Monroy, E., Vigué, F., Calle, F., Izpura, J. I., Muñoz, E., Faurie, J.-P. (2000) Time response analysis of ZnSe-based Schottky barrier photodetectors. Applied Physics Letters, 77 (17). 2761-2763 doi:10.1063/1.1320038
Tournié, E., Brunet, P., Faurie, J.-P. (1999) Evidence of N-related compensating donors in lightly doped ZnSe:N. Applied Physics Letters, 74 (15). 2200-2202 doi:10.1063/1.123800
Bouhdada, A., Hanzaz, M., Vigué, F., Faurie, J. P. (2003) Electrical and optical proprieties of photodiodes based on ZnSe material. Applied Physics Letters, 83 (1). 171-173 doi:10.1063/1.1589191
Tournié, E., Ongaretto, C., Laügt, M., Faurie, J.-P. (1998) Critical thickness of Zn1−xCdxSe/ZnSe heterostructures grown on relaxed ZnSe buffer layers on bare GaAs substrates. Applied Physics Letters, 72 (2). 217-219 doi:10.1063/1.120690
Fan, Y. (1995) Optimization of compositional grading in Zn(Se,Te) graded ohmic contacts to p‐type ZnSe. Applied Physics Letters, 67 (12). 1739-1741 doi:10.1063/1.115034
Vigué, F., Tournié, E., Faurie, J.-P., Monroy, E., Calle, F., Muñoz, E. (2001) Visible-blind ultraviolet photodetectors based on ZnMgBeSe Schottky barrier diodes. Applied Physics Letters, 78 (26). 4190-4192 doi:10.1063/1.1381415
Chauvet, C., Venneguès, P., Brunet, P., Tournié, E., Faurie, J. P. (1998) Heteroepitaxial growth of BeSe on vicinal Si(001) surfaces. Applied Physics Letters, 73 (7). 957-959 doi:10.1063/1.122051
 
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