Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Nishizawa, Shin-ichi, Kojima, Kazutoshi, Kuroda, Satoshi, Arai, Kazuo, Pons, Michel (2005) Modeling of SiC-CVD on Si-face/C-face in a horizontal hot-wall reactor. Journal of Crystal Growth, 275 (1). doi:10.1016/j.jcrysgro.2004.11.072

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleModeling of SiC-CVD on Si-face/C-face in a horizontal hot-wall reactor
JournalJournal of Crystal Growth
AuthorsNishizawa, Shin-ichiAuthor
Kojima, KazutoshiAuthor
Kuroda, SatoshiAuthor
Arai, KazuoAuthor
Pons, MichelAuthor
Year2005 (February)Volume275
Issue1
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2004.11.072Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID2880127Long-form Identifiermindat:1:5:2880127:6
GUID0
Full ReferenceNishizawa, Shin-ichi, Kojima, Kazutoshi, Kuroda, Satoshi, Arai, Kazuo, Pons, Michel (2005) Modeling of SiC-CVD on Si-face/C-face in a horizontal hot-wall reactor. Journal of Crystal Growth, 275 (1). doi:10.1016/j.jcrysgro.2004.11.072
Plain TextNishizawa, Shin-ichi, Kojima, Kazutoshi, Kuroda, Satoshi, Arai, Kazuo, Pons, Michel (2005) Modeling of SiC-CVD on Si-face/C-face in a horizontal hot-wall reactor. Journal of Crystal Growth, 275 (1). doi:10.1016/j.jcrysgro.2004.11.072
In(2005, February) Journal of Crystal Growth Vol. 275 (1) Elsevier BV

See Also

These are possibly similar items as determined by title/reference text matching only.

Nishizawa, Shin-ichi, Pons, Michel (2007) Numerical modeling of silicon carbide epitaxy in a horizontal hot-wall reactor. Journal of Crystal Growth, 303 (1). 334-336 doi:10.1016/j.jcrysgro.2006.12.018
Nishizawa, Shin Ichi, Pons, Michel (2005) Numerical Analysis of Growth Condition on SiC-CVD in the Horizontal Hot-Wall Reactor. Materials Science Forum, 483. 53-56 doi:10.4028/www.scientific.net/msf.483-485.53
Kojima, Kazutoshi, Suzuki, Takaya, Kuroda, Satoshi, Nishio, Johji, Arai, Kazuo (2003) Epitaxial Growth of High-Quality 4H-SiC Carbon-Face by Low-Pressure Hot-Wall Chemical Vapor Deposition. Japanese Journal of Applied Physics, 42. doi:10.1143/jjap.42.l637
Kojima, Kazutoshi, Okumura, Hajime, Kuroda, Satoshi, Arai, Kazuo, Ohi, Akihiko, Akinaga, Hiroyuki (2005) 2-Inch 4H-SiC Homoepitaxial Layer Grown on On-Axis C-Face Substrate by CVD Method. Materials Science Forum, 483. 93-96 doi:10.4028/www.scientific.net/msf.483-485.93
Kojima, K., Nishizawa, S., Kuroda, S., Okumura, H., Arai, K. (2005) Effect of growth condition on micropipe filling of 4H–SiC epitaxial layer. Journal of Crystal Growth, 275 (1). doi:10.1016/j.jcrysgro.2004.11.071
Kojima, Kazutoshi, Takahashi, Tetsuo, Ishida, Yuuki, Kuroda, Satoshi, Okumura, Hajime, Arai, Kazuo (2004) 4H-SiC Carbon-Face Epitaxial Layers Grown by Low-Pressure Hot-Wall Chemical Vapor Deposition. Materials Science Forum, 457. 209-212 doi:10.4028/www.scientific.net/msf.457-460.209
Nishizawa, Shin-ichi (2009) Numerical modeling of SiC single crystal growth-sublimation and hot-wall epitaxy. Journal of Crystal Growth, 311 (3). 871-874 doi:10.1016/j.jcrysgro.2008.09.105
Meziere, J., Ucar, M., Blanquet, E., Pons, M., Ferret, P., Di Cioccio, L. (2004) Modeling and simulation of SiC CVD in the horizontal hot-wall reactor concept. Journal of Crystal Growth, 267 (3). 436-451 doi:10.1016/j.jcrysgro.2004.04.038
Kojima, K., Okumura, H., Kuroda, S., Arai, K. (2004) Homoepitaxial growth of 4H-SiC on on-axis C-face substrates by chemical vapor depositon. Journal of Crystal Growth, 269 (2). 367-376 doi:10.1016/j.jcrysgro.2004.04.122
Nishizawa, Shin Ichi, Pons, Michel (2006) Recent Progress of SiC Hot-Wall Epitaxy and Its Modeling. Materials Science Forum, 527. 129-134 doi:10.4028/www.scientific.net/msf.527-529.129
Kato, Tomohisa, Kojima, Kazutoshi, Nishizawa, Shin Ichi, Arai, Kazuo (2005) Defect Characterization of 4H-SiC Bulk Crystals Grown on Micropipe Filled Seed Crystals. Materials Science Forum, 483. 315-318 doi:10.4028/www.scientific.net/msf.483-485.315
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: August 31, 2025 19:23:30
Go to top of page