Meziere, J., Ucar, M., Blanquet, E., Pons, M., Ferret, P., Di Cioccio, L. (2004) Modeling and simulation of SiC CVD in the horizontal hot-wall reactor concept. Journal of Crystal Growth, 267 (3). 436-451 doi:10.1016/j.jcrysgro.2004.04.038
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Modeling and simulation of SiC CVD in the horizontal hot-wall reactor concept | ||
Journal | Journal of Crystal Growth | ||
Authors | Meziere, J. | Author | |
Ucar, M. | Author | ||
Blanquet, E. | Author | ||
Pons, M. | Author | ||
Ferret, P. | Author | ||
Di Cioccio, L. | Author | ||
Year | 2004 (July) | Volume | 267 |
Issue | 3 | ||
Publisher | Elsevier BV | ||
DOI | doi:10.1016/j.jcrysgro.2004.04.038Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 2877448 | Long-form Identifier | mindat:1:5:2877448:6 |
GUID | 0 | ||
Full Reference | Meziere, J., Ucar, M., Blanquet, E., Pons, M., Ferret, P., Di Cioccio, L. (2004) Modeling and simulation of SiC CVD in the horizontal hot-wall reactor concept. Journal of Crystal Growth, 267 (3). 436-451 doi:10.1016/j.jcrysgro.2004.04.038 | ||
Plain Text | Meziere, J., Ucar, M., Blanquet, E., Pons, M., Ferret, P., Di Cioccio, L. (2004) Modeling and simulation of SiC CVD in the horizontal hot-wall reactor concept. Journal of Crystal Growth, 267 (3). 436-451 doi:10.1016/j.jcrysgro.2004.04.038 | ||
In | (2004, July) Journal of Crystal Growth Vol. 267 (3) Elsevier BV |
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