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Pons, M., Mezière, J., Dedulle, J. M., Wan Tang Kuan, S., Blanquet, E., Bernard, C., Ferret, P., Di Cioccio, L., Billon, T., Madar, R. (2001) Simulation of the large-area growth of homoepitaxial 4H-Sic by chemical vapor deposition. Le Journal de Physique IV, 11. doi:10.1051/jp4:20013135

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Reference TypeJournal (article/letter/editorial)
TitleSimulation of the large-area growth of homoepitaxial 4H-Sic by chemical vapor deposition
JournalLe Journal de Physique IV
AuthorsPons, M.Author
Mezière, J.Author
Dedulle, J. M.Author
Wan Tang Kuan, S.Author
Blanquet, E.Author
Bernard, C.Author
Ferret, P.Author
Di Cioccio, L.Author
Billon, T.Author
Madar, R.Author
Year2001 (August)Volume11
PublisherEDP Sciences
DOIdoi:10.1051/jp4:20013135Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID10302044Long-form Identifiermindat:1:5:10302044:2
GUID0
Full ReferencePons, M., Mezière, J., Dedulle, J. M., Wan Tang Kuan, S., Blanquet, E., Bernard, C., Ferret, P., Di Cioccio, L., Billon, T., Madar, R. (2001) Simulation of the large-area growth of homoepitaxial 4H-Sic by chemical vapor deposition. Le Journal de Physique IV, 11. doi:10.1051/jp4:20013135
Plain TextPons, M., Mezière, J., Dedulle, J. M., Wan Tang Kuan, S., Blanquet, E., Bernard, C., Ferret, P., Di Cioccio, L., Billon, T., Madar, R. (2001) Simulation of the large-area growth of homoepitaxial 4H-Sic by chemical vapor deposition. Le Journal de Physique IV, 11. doi:10.1051/jp4:20013135
In(n.d.) Le Journal de Physique IV Vol. 11. EDP Sciences


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