Pons, M., Mezière, J., Dedulle, J. M., Wan Tang Kuan, S., Blanquet, E., Bernard, C., Ferret, P., Di Cioccio, L., Billon, T., Madar, R. (2001) Simulation of the large-area growth of homoepitaxial 4H-Sic by chemical vapor deposition. Le Journal de Physique IV, 11. doi:10.1051/jp4:20013135
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Simulation of the large-area growth of homoepitaxial 4H-Sic by chemical vapor deposition | ||
Journal | Le Journal de Physique IV | ||
Authors | Pons, M. | Author | |
Mezière, J. | Author | ||
Dedulle, J. M. | Author | ||
Wan Tang Kuan, S. | Author | ||
Blanquet, E. | Author | ||
Bernard, C. | Author | ||
Ferret, P. | Author | ||
Di Cioccio, L. | Author | ||
Billon, T. | Author | ||
Madar, R. | Author | ||
Year | 2001 (August) | Volume | 11 |
Publisher | EDP Sciences | ||
DOI | doi:10.1051/jp4:20013135Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 10302044 | Long-form Identifier | mindat:1:5:10302044:2 |
GUID | 0 | ||
Full Reference | Pons, M., Mezière, J., Dedulle, J. M., Wan Tang Kuan, S., Blanquet, E., Bernard, C., Ferret, P., Di Cioccio, L., Billon, T., Madar, R. (2001) Simulation of the large-area growth of homoepitaxial 4H-Sic by chemical vapor deposition. Le Journal de Physique IV, 11. doi:10.1051/jp4:20013135 | ||
Plain Text | Pons, M., Mezière, J., Dedulle, J. M., Wan Tang Kuan, S., Blanquet, E., Bernard, C., Ferret, P., Di Cioccio, L., Billon, T., Madar, R. (2001) Simulation of the large-area growth of homoepitaxial 4H-Sic by chemical vapor deposition. Le Journal de Physique IV, 11. doi:10.1051/jp4:20013135 | ||
In | (n.d.) Le Journal de Physique IV Vol. 11. EDP Sciences |
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