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Pons, M, Baillet, F, Blanquet, E, Pernot, E, Madar, R, Chaussende, D, Mermoux, M, Di Coccio, L, Ferret, P, Feuillet, G, Faure, C, Billon, Th (2003) Vapor phase techniques for the fabrication of homoepitaxial layers of silicon carbide: process modeling and characterization. Applied Surface Science, 212. 177-183 doi:10.1016/s0169-4332(03)00064-3

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Reference TypeJournal (article/letter/editorial)
TitleVapor phase techniques for the fabrication of homoepitaxial layers of silicon carbide: process modeling and characterization
JournalApplied Surface Science
AuthorsPons, MAuthor
Baillet, FAuthor
Blanquet, EAuthor
Pernot, EAuthor
Madar, RAuthor
Chaussende, DAuthor
Mermoux, MAuthor
Di Coccio, LAuthor
Ferret, PAuthor
Feuillet, GAuthor
Faure, CAuthor
Billon, ThAuthor
Year2003 (May)Volume212
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(03)00064-3Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9905041Long-form Identifiermindat:1:5:9905041:0
GUID0
Full ReferencePons, M, Baillet, F, Blanquet, E, Pernot, E, Madar, R, Chaussende, D, Mermoux, M, Di Coccio, L, Ferret, P, Feuillet, G, Faure, C, Billon, Th (2003) Vapor phase techniques for the fabrication of homoepitaxial layers of silicon carbide: process modeling and characterization. Applied Surface Science, 212. 177-183 doi:10.1016/s0169-4332(03)00064-3
Plain TextPons, M, Baillet, F, Blanquet, E, Pernot, E, Madar, R, Chaussende, D, Mermoux, M, Di Coccio, L, Ferret, P, Feuillet, G, Faure, C, Billon, Th (2003) Vapor phase techniques for the fabrication of homoepitaxial layers of silicon carbide: process modeling and characterization. Applied Surface Science, 212. 177-183 doi:10.1016/s0169-4332(03)00064-3
In(n.d.) Applied Surface Science Vol. 212. Elsevier BV

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Chaussende, D., Baillet, F., Charpentier, L., Pernot, E., Pons, M., Madar, R. (2003) Continuous Feed Physical Vapor Transport. Journal of the Electrochemical Society, 150. doi:10.1149/1.1606689
Pons, M., Mezière, J., Dedulle, J. M., Wan Tang Kuan, S., Blanquet, E., Bernard, C., Ferret, P., Di Cioccio, L., Billon, T., Madar, R. (2001) Simulation of the large-area growth of homoepitaxial 4H-Sic by chemical vapor deposition. Le Journal de Physique IV, 11. doi:10.1051/jp4:20013135
Meziere, Jérôme, Pons, Michel, Cioccio, Léa Di, Blanquet, Elisabeth, Ferret, Pierre, Dedulle, Jean-Marc, Baillet, Francis, Pernot, Etienne, Anikin, Michaïl, Madar, Roland, Billon, Thierry (2004) Contribution of numerical simulation to silicon carbide bulk growth and epitaxy. Journal of Physics: Condensed Matter, 16 (17). doi:10.1088/0953-8984/16/17/009
Baillet, Francis, Chaussende, Didier, Charpentier, Ludovic, Pernot, Etienne, Pons, Michel, Madar, Roland (2003) Heat Transfer Modeling of a New Crystal Growth Process. Materials Science Forum, 433. 103-106 doi:10.4028/www.scientific.net/msf.433-436.103
Chaussende, Didier, Balloud, Carole, Auvray, Laurent, Baillet, Francis, Zielinski, Marcin, Juillaguet, Sandrine, Mermoux, Michel, Pernot, Etienne, Camassel, Jean, Pons, Michel, Madar, Roland (2004) Characterization of Thick 2-Inch 4H-SiC Layers Grown by the Continuous Feed-Physical Vapor Transport Method. Materials Science Forum, 457. 91-94 doi:10.4028/www.scientific.net/msf.457-460.91
Pons, Michel, Mezière, Jérôme, Kuan, Stephane Wan Tang, Blanquet, Elisabeth, Ferret, Pierre, Di Cioccio, Lea, Billon, Thierry, Madar, Roland (2002) Simulation of the Large-Area Growth of Homoepitaxial 4H-SiC by Chemical Vapor Deposition. Materials Science Forum, 389. 223-226 doi:10.4028/www.scientific.net/msf.389-393.223
Pons, Michel, Blanquet, Elisabeth, Dedulle, Jean Marc, Ucar, M., Wellmann, Peter J., Danielsson, Örjan, Ferret, Pierre, Di Cioccio, Lea, Baillet, Francis, Chaussende, Didier, Madar, Roland (2005) Progress and Limits of the Numerical Simulation of SiC Bulk and Epitaxy Growth Processes. Materials Science Forum, 483. 3-8 doi:10.4028/www.scientific.net/msf.483-485.3
Chaussende, Didier, Baillet, Francis, Charpentier, Ludovic, Pernot, Etienne, Pons, Michel, Madar, Roland (2003) Towards a Continuous Feeding of the PVT Growth Process: an Experimental Investigation. Materials Science Forum, 433. 25-28 doi:10.4028/www.scientific.net/msf.433-436.25
Charpentier, Ludovic, Baillet, Francis, Chaussende, Didier, Pernot, Etienne, Pons, Michel, Madar, Roland (2003) A Study of HTCVD Renewing of the SiC Polycrystalline Source during the PVT Process. Materials Science Forum, 433. 87-90 doi:10.4028/www.scientific.net/msf.433-436.87
Meziere, J., Ucar, M., Blanquet, E., Pons, M., Ferret, P., Di Cioccio, L. (2004) Modeling and simulation of SiC CVD in the horizontal hot-wall reactor concept. Journal of Crystal Growth, 267 (3). 436-451 doi:10.1016/j.jcrysgro.2004.04.038
Charpentier, Ludovic, Baillet, Francis, Chaussende, Didier, Auvray, Laurent, Pons, Michel, Pernot, Etienne, Madar, Roland (2004) In Situ SiC Feeding by Chemical Vapor Deposition for Bulk Growth. Materials Science Forum, 457. 139-142 doi:10.4028/www.scientific.net/msf.457-460.139
 
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