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Dimakis, E., Tsagaraki, K., Iliopoulos, E., Komninou, Ph., Kehagias, Th., Delimitis, A., Georgakilas, A. (2005) Correlation between nucleation, morphology and residual strain of InN grown on Ga-face GaN (0001). Journal of Crystal Growth, 278 (1). 367-372 doi:10.1016/j.jcrysgro.2005.01.034

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Reference TypeJournal (article/letter/editorial)
TitleCorrelation between nucleation, morphology and residual strain of InN grown on Ga-face GaN (0001)
JournalJournal of Crystal Growth
AuthorsDimakis, E.Author
Tsagaraki, K.Author
Iliopoulos, E.Author
Komninou, Ph.Author
Kehagias, Th.Author
Delimitis, A.Author
Georgakilas, A.Author
Year2005 (May)Volume278
Issue1
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2005.01.034Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID2882148Long-form Identifiermindat:1:5:2882148:3
GUID0
Full ReferenceDimakis, E., Tsagaraki, K., Iliopoulos, E., Komninou, Ph., Kehagias, Th., Delimitis, A., Georgakilas, A. (2005) Correlation between nucleation, morphology and residual strain of InN grown on Ga-face GaN (0001). Journal of Crystal Growth, 278 (1). 367-372 doi:10.1016/j.jcrysgro.2005.01.034
Plain TextDimakis, E., Tsagaraki, K., Iliopoulos, E., Komninou, Ph., Kehagias, Th., Delimitis, A., Georgakilas, A. (2005) Correlation between nucleation, morphology and residual strain of InN grown on Ga-face GaN (0001). Journal of Crystal Growth, 278 (1). 367-372 doi:10.1016/j.jcrysgro.2005.01.034
In(2005, May) Journal of Crystal Growth Vol. 278 (1) Elsevier BV

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Dimakis, E., Iliopoulos, E., Tsagaraki, K., Kehagias, Th., Komninou, Ph., Georgakilas, A. (2005) Heteroepitaxial growth of In-face InN on GaN (0001) by plasma-assisted molecular-beam epitaxy. Journal of Applied Physics, 97 (11). 113520pp. doi:10.1063/1.1923166
Kehagias, Th., Delimitis, A., Komninou, Ph., Iliopoulos, E., Dimakis, E., Georgakilas, A., Nouet, G. (2005) Misfit accommodation of compact and columnar InN epilayers grown on Ga-face GaN (0001) by molecular-beam epitaxy. Applied Physics Letters, 86 (15). 151905pp. doi:10.1063/1.1900310
Kehagias, Th., Iliopoulos, E., Delimitis, A., Nouet, G., Dimakis, E., Georgakilas, A., Komninou, Ph. (2005) Interfacial structure of MBE grown InN on GaN. physica status solidi (a), 202 (5). 777-780 doi:10.1002/pssa.200461343
Dimakis, E., Iliopoulos, E., Tsagaraki, K., Georgakilas, A. (2005) Physical model of InN growth on Ga-face GaN (0001) by molecular-beam epitaxy. Applied Physics Letters, 86 (13). 133104pp. doi:10.1063/1.1891292
Dimakis, E., Georgakilas, A., Iliopoulos, E., Tsagaraki, K., Delimitis, A., Komninou, Ph., Kirmse, H., Neumann, W., Androulidaki, M., Pelekanos, N. T. (2006) InN quantum dots grown on GaN (0001) by molecular beam epitaxy. physica status solidi (c), 3 (11). 3983-3987 doi:10.1002/pssc.200671613
Arvanitidis, J., Katsikini, M., Ves, S., Delimitis, A., Kehagias, Th., Komninou, Ph., Dimakis, E., Iliopoulos, E., Georgakilas, A. (2006) Raman and transmission electron microscopy characterization of InN samples grown on GaN/Al2O3 by molecular beam epitaxy. physica status solidi (b), 243 (7). 1588-1593 doi:10.1002/pssb.200565193
Delimitis, A., Gladkov, P., Komninou, Ph., Kehagias, Th., Arvanitidis, J., Ves, S., Katsikini, M., Dimakis, E., Georgakilas, A. (2006) Structural and optical characterisation of thick InN epilayers grown with a single or two step growth process on GaN(0001). physica status solidi (a), 203 (1). 162-166 doi:10.1002/pssa.200563506
Iliopoulos, E., Adikimenakis, A., Dimakis, E., Tsagaraki, K., Konstantinidis, G., Georgakilas, A. (2005) Active nitrogen species dependence on radiofrequency plasma source operating parameters and their role in GaN growth. Journal of Crystal Growth, 278 (1). 426-430 doi:10.1016/j.jcrysgro.2005.01.013
Eftychis, S., Kruse, J., Koukoula, T., Kehagias, Th., Komninou, Ph., Adikimenakis, A., Tsagaraki, K., Androulidaki, M., Tzanetakis, P., Iliopoulos, E., Georgakilas, A. (2016) Understanding the effects of Si (111) nitridation on the spontaneous growth and properties of GaN nanowires. Journal of Crystal Growth, 442. 8-13 doi:10.1016/j.jcrysgro.2016.02.028
Adikimenakis, A., Sahonta, S.-L., Dimitrakopulos, G.P., Domagala, J., Kehagias, Th., Komninou, Ph., Iliopoulos, E., Georgakilas, A. (2009) Effect of AlN interlayers in the structure of GaN-on-Si grown by plasma-assisted MBE. Journal of Crystal Growth, 311 (7). 2010-2015 doi:10.1016/j.jcrysgro.2008.10.085
Dimakis, E., Iliopoulos, E., Tsagaraki, K., Adikimenakis, A., Georgakilas, A. (2006) Biaxial strain and lattice constants of InN (0001) films grown by plasma-assisted molecular beam epitaxy. Applied Physics Letters, 88 (19). 191918pp. doi:10.1063/1.2202136
 
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