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Dimakis, E., Georgakilas, A., Iliopoulos, E., Tsagaraki, K., Delimitis, A., Komninou, Ph., Kirmse, H., Neumann, W., Androulidaki, M., Pelekanos, N. T. (2006) InN quantum dots grown on GaN (0001) by molecular beam epitaxy. physica status solidi (c), 3 (11). 3983-3987 doi:10.1002/pssc.200671613

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Reference TypeJournal (article/letter/editorial)
TitleInN quantum dots grown on GaN (0001) by molecular beam epitaxy
Journalphysica status solidi (c)
AuthorsDimakis, E.Author
Georgakilas, A.Author
Iliopoulos, E.Author
Tsagaraki, K.Author
Delimitis, A.Author
Komninou, Ph.Author
Kirmse, H.Author
Neumann, W.Author
Androulidaki, M.Author
Pelekanos, N. T.Author
Year2006 (December)Volume3
Issue11
PublisherWiley
DOIdoi:10.1002/pssc.200671613Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5111254Long-form Identifiermindat:1:5:5111254:1
GUID0
Full ReferenceDimakis, E., Georgakilas, A., Iliopoulos, E., Tsagaraki, K., Delimitis, A., Komninou, Ph., Kirmse, H., Neumann, W., Androulidaki, M., Pelekanos, N. T. (2006) InN quantum dots grown on GaN (0001) by molecular beam epitaxy. physica status solidi (c), 3 (11). 3983-3987 doi:10.1002/pssc.200671613
Plain TextDimakis, E., Georgakilas, A., Iliopoulos, E., Tsagaraki, K., Delimitis, A., Komninou, Ph., Kirmse, H., Neumann, W., Androulidaki, M., Pelekanos, N. T. (2006) InN quantum dots grown on GaN (0001) by molecular beam epitaxy. physica status solidi (c), 3 (11). 3983-3987 doi:10.1002/pssc.200671613
In(2006, December) physica status solidi (c) Vol. 3 (11) Wiley

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Iliopoulos, E., Georgakilas, A., Dimakis, E., Adikimenakis, A., Tsagaraki, K., Androulidaki, M., Pelekanos, N. T. (2006) InGaN(0001) alloys grown in the entire composition range by plasma assisted molecular beam epitaxy. physica status solidi (a), 203 (1). 102-105 doi:10.1002/pssa.200563509
Arvanitidis, J., Katsikini, M., Ves, S., Delimitis, A., Kehagias, Th., Komninou, Ph., Dimakis, E., Iliopoulos, E., Georgakilas, A. (2006) Raman and transmission electron microscopy characterization of InN samples grown on GaN/Al2O3 by molecular beam epitaxy. physica status solidi (b), 243 (7). 1588-1593 doi:10.1002/pssb.200565193
Dimakis, E., Iliopoulos, E., Tsagaraki, K., Georgakilas, A. (2006) Self-regulating mechanism of InN growth on GaN(0001) by molecular beam epitaxy; from nanostructures to films. physica status solidi (a), 203 (7). 1686-1690 doi:10.1002/pssa.200565404
Dimakis, E., Iliopoulos, E., Tsagaraki, K., Kehagias, Th., Komninou, Ph., Georgakilas, A. (2005) Heteroepitaxial growth of In-face InN on GaN (0001) by plasma-assisted molecular-beam epitaxy. Journal of Applied Physics, 97 (11). 113520pp. doi:10.1063/1.1923166
Androulidaki, M., Pelekanos, N. T., Tsagaraki, K., Dimakis, E., Iliopoulos, E., Adikimenakis, A., Bellet-Amalric, E., Jalabert, D., Georgakilas, A. (2006) Energy gaps and bowing parameters of InAlGaN ternary and quaternary alloys. physica status solidi (c), 3 (6). 1866-1869 doi:10.1002/pssc.200565280
Kehagias, Th., Iliopoulos, E., Delimitis, A., Nouet, G., Dimakis, E., Georgakilas, A., Komninou, Ph. (2005) Interfacial structure of MBE grown InN on GaN. physica status solidi (a), 202 (5). 777-780 doi:10.1002/pssa.200461343
Kehagias, Th., Delimitis, A., Komninou, Ph., Iliopoulos, E., Dimakis, E., Georgakilas, A., Nouet, G. (2005) Misfit accommodation of compact and columnar InN epilayers grown on Ga-face GaN (0001) by molecular-beam epitaxy. Applied Physics Letters, 86 (15). 151905pp. doi:10.1063/1.1900310
Dimakis, E., Tsagaraki, K., Iliopoulos, E., Komninou, Ph., Kehagias, Th., Delimitis, A., Georgakilas, A. (2005) Correlation between nucleation, morphology and residual strain of InN grown on Ga-face GaN (0001). Journal of Crystal Growth, 278 (1). 367-372 doi:10.1016/j.jcrysgro.2005.01.034
Dimakis, E., Iliopoulos, E., Tsagaraki, K., Georgakilas, A. (2005) Physical model of InN growth on Ga-face GaN (0001) by molecular-beam epitaxy. Applied Physics Letters, 86 (13). 133104pp. doi:10.1063/1.1891292
Zamfirescu, Marian, Vinattieri, Anna, Gurioli, Massimo, Androulidaki, M., Pelekanos, N. T., Dimakis, E., Georgakilas, A. (2005) Recombination kinetics in polarization matched GaN/InAlGaN quantum wells. physica status solidi (c), 2 (11). 3941-3944 doi:10.1002/pssc.200562042
Dimakis, E., Iliopoulos, E., Tsagaraki, K., Adikimenakis, A., Georgakilas, A. (2006) Biaxial strain and lattice constants of InN (0001) films grown by plasma-assisted molecular beam epitaxy. Applied Physics Letters, 88 (19). 191918pp. doi:10.1063/1.2202136
 
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