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Bengoechea-Encabo, A., Barbagini, F., Fernandez-Garrido, S., Grandal, J., Ristic, J., Sanchez-Garcia, M.A., Calleja, E., Jahn, U., Luna, E., Trampert, A. (2011) Understanding the selective area growth of GaN nanocolumns by MBE using Ti nanomasks. Journal of Crystal Growth, 325 (1). 89-92 doi:10.1016/j.jcrysgro.2011.04.035

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Reference TypeJournal (article/letter/editorial)
TitleUnderstanding the selective area growth of GaN nanocolumns by MBE using Ti nanomasks
JournalJournal of Crystal Growth
AuthorsBengoechea-Encabo, A.Author
Barbagini, F.Author
Fernandez-Garrido, S.Author
Grandal, J.Author
Ristic, J.Author
Sanchez-Garcia, M.A.Author
Calleja, E.Author
Jahn, U.Author
Luna, E.Author
Trampert, A.Author
Year2011 (June)Volume325
Issue1
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2011.04.035Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID2901426Long-form Identifiermindat:1:5:2901426:6
GUID0
Full ReferenceBengoechea-Encabo, A., Barbagini, F., Fernandez-Garrido, S., Grandal, J., Ristic, J., Sanchez-Garcia, M.A., Calleja, E., Jahn, U., Luna, E., Trampert, A. (2011) Understanding the selective area growth of GaN nanocolumns by MBE using Ti nanomasks. Journal of Crystal Growth, 325 (1). 89-92 doi:10.1016/j.jcrysgro.2011.04.035
Plain TextBengoechea-Encabo, A., Barbagini, F., Fernandez-Garrido, S., Grandal, J., Ristic, J., Sanchez-Garcia, M.A., Calleja, E., Jahn, U., Luna, E., Trampert, A. (2011) Understanding the selective area growth of GaN nanocolumns by MBE using Ti nanomasks. Journal of Crystal Growth, 325 (1). 89-92 doi:10.1016/j.jcrysgro.2011.04.035
In(2011, June) Journal of Crystal Growth Vol. 325 (1) Elsevier BV

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Albert, S., Bengoechea-Encabo, A., Lefebvre, P., Barbagini, F., Sanchez-Garcia, M. A., Calleja, E., Jahn, U., Trampert, A. (2012) Selective area growth and characterization of InGaN nano-disks implemented in GaN nanocolumns with different top morphologies. Applied Physics Letters, 100 (23). 231906pp. doi:10.1063/1.4728115
Bengoechea-Encabo, A., Albert, S., Sanchez-Garcia, M.A., López, L.L., Estradé, S., Rebled, J.M., Peiró, F., Nataf, G., de Mierry, P., Zuniga-Perez, J., Calleja, E. (2012) Selective area growth of a- and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography. Journal of Crystal Growth, 353 (1). 1-4 doi:10.1016/j.jcrysgro.2011.11.069
Bengoechea-Encabo, A., Albert, S., Zuñiga-Perez, J., de Mierry, P., Trampert, A., Barbagini, F., Sanchez-Garcia, M. A., Calleja, E. (2013) Selective area growth and characterization of GaN nanocolumns, with and without an InGaN insertion, on semi-polar (11–22) GaN templates. Applied Physics Letters, 103 (24). 241905pp. doi:10.1063/1.4846455
Albert, S., Bengoechea-Encabo, A., Sanchez-Garcia, M. A., Calleja, E., Jahn, U. (2013) Selective area growth and characterization of InGaN nanocolumns for phosphor-free white light emission. Journal of Applied Physics, 113 (11). 114306pp. doi:10.1063/1.4796100
Bougrioua, Z., Gibart, P., Calleja, E., Jahn, U., Trampert, A., Ristic, J., Utrera, M., Nataf, G. (2007) Growth of freestanding GaN using pillar-epitaxial lateral overgrowth from GaN nanocolumns. Journal of Crystal Growth, 309 (2). 113-120 doi:10.1016/j.jcrysgro.2007.09.030
Bengoechea-Encabo, Ana, Albert, Steven, Niehle, Michael, Trampert, Achim, Calleja, Enrique (2023) Selective area growth of high quality GaN nanocolumns on Si(0 0 1) by plasma assisted molecular beam epitaxy. Journal of Crystal Growth, 624. 127367 doi:10.1016/j.jcrysgro.2023.127367
Albert, S., Bengoechea-Encabo, A., Lefebvre, P., Sanchez-Garcia, M. A., Calleja, E., Jahn, U., Trampert, A. (2011) Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates. Applied Physics Letters, 99 (13). 131108pp. doi:10.1063/1.3644986
Fernando-Saavedra, A., Albert, S., Bengoechea-Encabo, A., Lopez-Romero, D., Niehle, M., Metzner, S., Schmidt, G., Bertram, F., Sánchez-García, M.A., Trampert, A., Christen, J., Calleja, E. (2019) Ordered arrays of defect-free GaN nanocolumns with very narrow excitonic emission line width. Journal of Crystal Growth, 525. 125189pp. doi:10.1016/j.jcrysgro.2019.125189
Fernando-Saavedra, Amalia, Albert, Steven, Bengoechea-Encabo, Ana, Trampert, Achim, Xie, Mengyao, Sanchez-Garcia, Miguel A., Calleja, Enrique (2023) Growth of non-polar m-plane GaN pseudo-substrates by Molecular beam epitaxy. Journal of Crystal Growth, 617. 127272 doi:10.1016/j.jcrysgro.2023.127272
Calleja, J. M., Lazić, S., Sanchez-Páramo, J., Agulló-Rueda, F., Cerutti, L., Ristić, J., Fernández-Garrido, S., Sánchez-Garcia, M. A., Grandal, J., Calleja, E., Trampert, A., Jahn, U. (2007) Inelastic light scattering spectroscopy of semiconductor nitride nanocolumns. physica status solidi (b), 244 (8). 2838-2846 doi:10.1002/pssb.200675610
Grandal, J., Pereiro, J., Bengoechea-Encabo, A., Fernández-Garrido, S., Sánchez-García, M. A., Muñoz, E., Calleja, E., Luna, E., Trampert, A. (2011) InN/InGaN multiple quantum wells emitting at 1.5 μm grown by molecular beam epitaxy. Applied Physics Letters, 98 (6). 61901pp. doi:10.1063/1.3552195
 
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