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Albert, S., Bengoechea-Encabo, A., Lefebvre, P., Sanchez-Garcia, M. A., Calleja, E., Jahn, U., Trampert, A. (2011) Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates. Applied Physics Letters, 99 (13). 131108pp. doi:10.1063/1.3644986

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Reference TypeJournal (article/letter/editorial)
TitleEmission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates
JournalApplied Physics Letters
AuthorsAlbert, S.Author
Bengoechea-Encabo, A.Author
Lefebvre, P.Author
Sanchez-Garcia, M. A.Author
Calleja, E.Author
Jahn, U.Author
Trampert, A.Author
Year2011 (September 26)Volume99
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.3644986Search in ResearchGate
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Mindat Ref. ID8596235Long-form Identifiermindat:1:5:8596235:8
GUID0
Full ReferenceAlbert, S., Bengoechea-Encabo, A., Lefebvre, P., Sanchez-Garcia, M. A., Calleja, E., Jahn, U., Trampert, A. (2011) Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates. Applied Physics Letters, 99 (13). 131108pp. doi:10.1063/1.3644986
Plain TextAlbert, S., Bengoechea-Encabo, A., Lefebvre, P., Sanchez-Garcia, M. A., Calleja, E., Jahn, U., Trampert, A. (2011) Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates. Applied Physics Letters, 99 (13). 131108pp. doi:10.1063/1.3644986
In(2011, September) Applied Physics Letters Vol. 99 (13) AIP Publishing

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Albert, S., Bengoechea-Encabo, A., Lefebvre, P., Barbagini, F., Sanchez-Garcia, M. A., Calleja, E., Jahn, U., Trampert, A. (2012) Selective area growth and characterization of InGaN nano-disks implemented in GaN nanocolumns with different top morphologies. Applied Physics Letters, 100 (23). 231906pp. doi:10.1063/1.4728115
Albert, S., Bengoechea-Encabo, A., Sanchez-Garcia, M. A., Calleja, E., Jahn, U. (2013) Selective area growth and characterization of InGaN nanocolumns for phosphor-free white light emission. Journal of Applied Physics, 113 (11). 114306pp. doi:10.1063/1.4796100
Albert, S., Bengoechea-Encabo, A., Kong, X., Sanchez-Garcia, M. A., Calleja, E., Trampert, A. (2013) Monolithic integration of InGaN segments emitting in the blue, green, and red spectral range in single ordered nanocolumns. Applied Physics Letters, 102 (18). 181103pp. doi:10.1063/1.4804293
Grandal, J., Sánchez-García, M. A., Calleja, E., Luna, E., Trampert, A. (2007) Accommodation mechanism of InN nanocolumns grown on Si(111) substrates by molecular beam epitaxy. Applied Physics Letters, 91 (2). 21902pp. doi:10.1063/1.2756293
Grandal, J., Pereiro, J., Bengoechea-Encabo, A., Fernández-Garrido, S., Sánchez-García, M. A., Muñoz, E., Calleja, E., Luna, E., Trampert, A. (2011) InN/InGaN multiple quantum wells emitting at 1.5 μm grown by molecular beam epitaxy. Applied Physics Letters, 98 (6). 61901pp. doi:10.1063/1.3552195
Bengoechea-Encabo, A., Albert, S., Zuñiga-Perez, J., de Mierry, P., Trampert, A., Barbagini, F., Sanchez-Garcia, M. A., Calleja, E. (2013) Selective area growth and characterization of GaN nanocolumns, with and without an InGaN insertion, on semi-polar (11–22) GaN templates. Applied Physics Letters, 103 (24). 241905pp. doi:10.1063/1.4846455
Albert, S., Bengoechea-Encabo, A., Kong, X., Sanchez-Garcia, M. A., Calleja, E., Trampert, A. (2013) Erratum: “Monolithic integration of InGaN segments emitting in the blue, green, and red spectral range in single ordered nanocolumns” [Appl. Phys. Lett. 102, 181103 (2013)]. Applied Physics Letters, 102 (21). 219901pp. doi:10.1063/1.4808016
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