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Isobe, Yasuhiro, Ikki, Hiromichi, Sakakibara, Tatsuyuki, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, Sugiyama, Takayuki, Amano, Hiroshi, Imade, Mamoru, Mori, Yusuke (2012) MOVPE growth of nonpolar a-plane GaN with low oxygen contamination and specular surface on a freestanding GaN substrate. Journal of Crystal Growth, 351 (1). 126-130 doi:10.1016/j.jcrysgro.2012.04.030

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Reference TypeJournal (article/letter/editorial)
TitleMOVPE growth of nonpolar a-plane GaN with low oxygen contamination and specular surface on a freestanding GaN substrate
JournalJournal of Crystal Growth
AuthorsIsobe, YasuhiroAuthor
Ikki, HiromichiAuthor
Sakakibara, TatsuyukiAuthor
Iwaya, MotoakiAuthor
Takeuchi, TetsuyaAuthor
Kamiyama, SatoshiAuthor
Akasaki, IsamuAuthor
Sugiyama, TakayukiAuthor
Amano, HiroshiAuthor
Imade, MamoruAuthor
Mori, YusukeAuthor
Year2012 (July)Volume351
Issue1
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2012.04.030Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID2903367Long-form Identifiermindat:1:5:2903367:8
GUID0
Full ReferenceIsobe, Yasuhiro, Ikki, Hiromichi, Sakakibara, Tatsuyuki, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, Sugiyama, Takayuki, Amano, Hiroshi, Imade, Mamoru, Mori, Yusuke (2012) MOVPE growth of nonpolar a-plane GaN with low oxygen contamination and specular surface on a freestanding GaN substrate. Journal of Crystal Growth, 351 (1). 126-130 doi:10.1016/j.jcrysgro.2012.04.030
Plain TextIsobe, Yasuhiro, Ikki, Hiromichi, Sakakibara, Tatsuyuki, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, Sugiyama, Takayuki, Amano, Hiroshi, Imade, Mamoru, Mori, Yusuke (2012) MOVPE growth of nonpolar a-plane GaN with low oxygen contamination and specular surface on a freestanding GaN substrate. Journal of Crystal Growth, 351 (1). 126-130 doi:10.1016/j.jcrysgro.2012.04.030
In(2012, July) Journal of Crystal Growth Vol. 351 (1) Elsevier BV

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