Ikeda, Kazuya, Isobe, Yasuhiro, Ikki, Hiromichi, Sakakibara, Tatsuyuki, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, Amano, Hiroshi (2012) Fabrication of AlInN/AlN/GaInN/GaN heterostructure field-effect transistors. physica status solidi (c), 9 (3). 942-944 doi:10.1002/pssc.201100492
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Fabrication of AlInN/AlN/GaInN/GaN heterostructure field-effect transistors | ||
| Journal | physica status solidi (c) | ||
| Authors | Ikeda, Kazuya | Author | |
| Isobe, Yasuhiro | Author | ||
| Ikki, Hiromichi | Author | ||
| Sakakibara, Tatsuyuki | Author | ||
| Iwaya, Motoaki | Author | ||
| Takeuchi, Tetsuya | Author | ||
| Kamiyama, Satoshi | Author | ||
| Akasaki, Isamu | Author | ||
| Amano, Hiroshi | Author | ||
| Year | 2012 (March) | Volume | 9 |
| Issue | 3 | ||
| Publisher | Wiley | ||
| DOI | doi:10.1002/pssc.201100492Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 5122826 | Long-form Identifier | mindat:1:5:5122826:8 |
| GUID | 0 | ||
| Full Reference | Ikeda, Kazuya, Isobe, Yasuhiro, Ikki, Hiromichi, Sakakibara, Tatsuyuki, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, Amano, Hiroshi (2012) Fabrication of AlInN/AlN/GaInN/GaN heterostructure field-effect transistors. physica status solidi (c), 9 (3). 942-944 doi:10.1002/pssc.201100492 | ||
| Plain Text | Ikeda, Kazuya, Isobe, Yasuhiro, Ikki, Hiromichi, Sakakibara, Tatsuyuki, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, Amano, Hiroshi (2012) Fabrication of AlInN/AlN/GaInN/GaN heterostructure field-effect transistors. physica status solidi (c), 9 (3). 942-944 doi:10.1002/pssc.201100492 | ||
| In | (2012, March) physica status solidi (c) Vol. 9 (3) Wiley | ||
See Also
These are possibly similar items as determined by title/reference text matching only.
