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Mols, Y., Kunert, B., Gaudin, G., Langer, R., Caymax, M. (2016) Study towards integration of In0.53Ga0.47As on 300 mm Si for CMOS sub-7 nm node: Development of thin graded In Ga1−As buffers on GaAs. Journal of Crystal Growth, 452. 244-247 doi:10.1016/j.jcrysgro.2016.04.014

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Reference TypeJournal (article/letter/editorial)
TitleStudy towards integration of In0.53Ga0.47As on 300 mm Si for CMOS sub-7 nm node: Development of thin graded In Ga1−As buffers on GaAs
JournalJournal of Crystal Growth
AuthorsMols, Y.Author
Kunert, B.Author
Gaudin, G.Author
Langer, R.Author
Caymax, M.Author
Year2016 (October)Volume452
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2016.04.014Search in ResearchGate
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Mindat Ref. ID2912251Long-form Identifiermindat:1:5:2912251:0
GUID0
Full ReferenceMols, Y., Kunert, B., Gaudin, G., Langer, R., Caymax, M. (2016) Study towards integration of In0.53Ga0.47As on 300 mm Si for CMOS sub-7 nm node: Development of thin graded In Ga1−As buffers on GaAs. Journal of Crystal Growth, 452. 244-247 doi:10.1016/j.jcrysgro.2016.04.014
Plain TextMols, Y., Kunert, B., Gaudin, G., Langer, R., Caymax, M. (2016) Study towards integration of In0.53Ga0.47As on 300 mm Si for CMOS sub-7 nm node: Development of thin graded In Ga1−As buffers on GaAs. Journal of Crystal Growth, 452. 244-247 doi:10.1016/j.jcrysgro.2016.04.014
In(2016) Journal of Crystal Growth Vol. 452. Elsevier BV

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Bogumilowicz, Y., Hartmann, J.M., Rochat, N., Salaun, A., Martin, M., Bassani, F., Baron, T., David, S., Bao, X.-Y., Sanchez, E. (2016) Threading dislocations in GaAs epitaxial layers on various thickness Ge buffers on 300 mm Si substrates. Journal of Crystal Growth, 453. 180-187 doi:10.1016/j.jcrysgro.2016.08.022
Kunert, B., Guo, W., Mols, Y., Tian, B., Wang, Z., Shi, Y., Van Thourhout, D., Pantouvaki, M., Van Campenhout, J., Langer, R., Barla, K. (2016) III/V nano ridge structures for optical applications on patterned 300 mm silicon substrate. Applied Physics Letters, 109 (9). 91101pp. doi:10.1063/1.4961936
Jeong, Y., Choi, H., Suzuki, T. (2007) Invalidity of graded buffers for InAs grown on GaAs (001)—A comparison between direct and graded-buffer growth. Journal of Crystal Growth, 301. 235-239 doi:10.1016/j.jcrysgro.2006.11.084
Choi, H., Jeong, Y., Cho, J., Jeon, M.H. (2009) Effectiveness of non-linear graded buffers for In(Ga,Al)As metamorphic layers grown on GaAs (001). Journal of Crystal Growth, 311 (4). 1091-1095 doi:10.1016/j.jcrysgro.2008.10.116
Kunert, Bernardette, Alcotte, Reynald, Mols, Yves, Baryshnikova, Marina, Waldron, Niamh, Collaert, Nadine, Langer, Robert (2021) Application of an Sb Surfactant in InGaAs Nano-ridge Engineering on 300 mm Silicon Substrates. Crystal Growth & Design, 21 (3) 1657-1665 doi:10.1021/acs.cgd.0c01486
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Guo, W., Mols, Y., Belz, J., Beyer, A., Volz, K., Schulze, A., Langer, R., Kunert, B. (2017) Anisotropic relaxation behavior of InGaAs/GaAs selectively grown in narrow trenches on (001) Si substrates. Journal of Applied Physics, 122 (2). 25303pp. doi:10.1063/1.4991481
Mols, Y., Bogdanowicz, J., Favia, P., Lagrain, P., Guo, W., Bender, H., Kunert, B. (2019) Structural analysis and resistivity measurements of InAs and GaSb fins on 300 mm Si for vertical (T)FET. Journal of Applied Physics, 125 (24). 245107pp. doi:10.1063/1.5096015
Mizuno, Y., Tomita, M., Takakura, H., Iwakawa, M., Kambayashi, D., Maruyama, T., Naritsuka, S. (2016) Experimental study of growth mechanism of GaAs microchannel epitaxy – Study of pinning effect of Si-doping. Journal of Crystal Growth, 452. 240-243 doi:10.1016/j.jcrysgro.2016.05.004
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