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ZHANG, Xinqiang, TU, Hailing, WEI, Feng, XIONG, Yuhua, YANG, Mengmeng, ZHAO, Hongbin, DU, Jun, WANG, Wenwu (2013) Epitaxial growth and characterization of Gd2O3-doped HfO2 film on Ge (001) substrates with zero interface layer. Journal of Rare Earths, 31 (11). 1092-1095 doi:10.1016/s1002-0721(12)60409-8

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Reference TypeJournal (article/letter/editorial)
TitleEpitaxial growth and characterization of Gd2O3-doped HfO2 film on Ge (001) substrates with zero interface layer
JournalJournal of Rare Earths
AuthorsZHANG, XinqiangAuthor
TU, HailingAuthor
WEI, FengAuthor
XIONG, YuhuaAuthor
YANG, MengmengAuthor
ZHAO, HongbinAuthor
DU, JunAuthor
WANG, WenwuAuthor
Year2013 (November)Volume31
Issue11
PublisherElsevier BV
DOIdoi:10.1016/s1002-0721(12)60409-8Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID3042281Long-form Identifiermindat:1:5:3042281:4
GUID0
Full ReferenceZHANG, Xinqiang, TU, Hailing, WEI, Feng, XIONG, Yuhua, YANG, Mengmeng, ZHAO, Hongbin, DU, Jun, WANG, Wenwu (2013) Epitaxial growth and characterization of Gd2O3-doped HfO2 film on Ge (001) substrates with zero interface layer. Journal of Rare Earths, 31 (11). 1092-1095 doi:10.1016/s1002-0721(12)60409-8
Plain TextZHANG, Xinqiang, TU, Hailing, WEI, Feng, XIONG, Yuhua, YANG, Mengmeng, ZHAO, Hongbin, DU, Jun, WANG, Wenwu (2013) Epitaxial growth and characterization of Gd2O3-doped HfO2 film on Ge (001) substrates with zero interface layer. Journal of Rare Earths, 31 (11). 1092-1095 doi:10.1016/s1002-0721(12)60409-8
In(2013, November) Journal of Rare Earths Vol. 31 (11) Elsevier BV

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YANG, Mengmeng, TU, Hailing, DU, Jun, WEI, Feng, XIONG, Yuhua, ZHAO, Hongbin (2013) Effects of NH3 annealing on interface and electrical properties of Gd-doped HfO2/Si stack. Journal of Rare Earths, 31 (4). 395-399 doi:10.1016/s1002-0721(12)60293-2
Zhang, Xinqiang, Tu, Hailing, Guo, Yiwen, Zhao, Hongbin, Yang, Mengmeng, Wei, Feng, Xiong, Yuhua, Yang, Zhimin, Du, Jun, Wang, Wenwu (2012) Atomic configuration of the interface between epitaxial Gd doped HfO2 high k thin films and Ge (001) substrates. Journal of Applied Physics, 111 (1). 14102pp. doi:10.1063/1.3672415
Zhang, Xinqiang, Tu, Hailing, Zhao, Hongbin, Yang, Mengmeng, Wang, Xiaona, Xiong, Yuhua, Yang, Zhimin, Du, Jun, Wang, Wenwu, Chen, Dapeng (2011) Band structure and electronic characteristics of cubic La2O3 gate dielectrics epitaxially grown on InP substrates. Applied Physics Letters, 99 (13). 132902pp. doi:10.1063/1.3643470
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Xiong, Yuhua, Tu, Hailing, Du, Jun, Zhang, Xinqiang, Chen, Dapeng, Wang, Wenwu (2011) Effects of rapid thermal annealing on structure and electrical properties of Gd-doped HfO2 high k film. Applied Physics Letters, 98 (8). 82906pp. doi:10.1063/1.3556652
Wang, Xiaona, Zhang, Xinqiang, Xiong, Yuhua, Du, Jun, Yang, Mengmeng, Wang, Lei (2011) Fabrication and properties of Gd2O3-doped HfO2 high k film by Co-sputtering. Rare Metals, 30. 647-650 doi:10.1007/s12598-011-0364-z
Zhang, Xinqiang, Tu, Hailing, Wei, Feng, Wang, Lei, Du, Jun (2009) Cube-on-cube epitaxy of Gd2O3-doped HfO2 films on Si(100) substrates by pulse laser deposition. Journal of Crystal Growth, 312 (1). 41-43 doi:10.1016/j.jcrysgro.2009.09.049
YUE, Shoujing, WEI, Feng, WANG, Yi, YANG, Zhimin, TU, Hailing, DU, Jun (2008) Phase control of magnetron sputtering deposited Gd2O3 thin films as high-κ gate dielectrics. Journal of Rare Earths, 26 (3). 371-374 doi:10.1016/s1002-0721(08)60098-8
Xiong, Yuhua, Tu, Hailing, Du, Jun, Wang, Ligen, Wei, Feng, Chen, Xiaoqiang, Yang, Mengmeng, Zhao, Hongbin, Chen, Dapeng, Wang, Wenwu (2014) Interaction of Gd and N incorporation on the band structure and oxygen vacancies of HfO2gate dielectric films. physica status solidi (b), 251 (8). 1635-1638 doi:10.1002/pssb.201451303
ZHANG, Jun, WEI, Feng, YANG, Zhimin, CHEN, Qiuyun, CHEN, Jun, WANG, Shuming (2013) Structure and chemical states of highly eptiaxial CeO2(001) films grown on SrTiO3 substrate by laser molecular beam epitaxy. Journal of Rare Earths, 31 (12). 1191-1194 doi:10.1016/s1002-0721(12)60425-6
 
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