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Zhang, Xinqiang, Tu, Hailing, Zhao, Hongbin, Yang, Mengmeng, Wang, Xiaona, Xiong, Yuhua, Yang, Zhimin, Du, Jun, Wang, Wenwu, Chen, Dapeng (2011) Band structure and electronic characteristics of cubic La2O3 gate dielectrics epitaxially grown on InP substrates. Applied Physics Letters, 99 (13). 132902pp. doi:10.1063/1.3643470

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Reference TypeJournal (article/letter/editorial)
TitleBand structure and electronic characteristics of cubic La2O3 gate dielectrics epitaxially grown on InP substrates
JournalApplied Physics Letters
AuthorsZhang, XinqiangAuthor
Tu, HailingAuthor
Zhao, HongbinAuthor
Yang, MengmengAuthor
Wang, XiaonaAuthor
Xiong, YuhuaAuthor
Yang, ZhiminAuthor
Du, JunAuthor
Wang, WenwuAuthor
Chen, DapengAuthor
Year2011 (September 26)Volume99
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.3643470Search in ResearchGate
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Mindat Ref. ID8596181Long-form Identifiermindat:1:5:8596181:8
GUID0
Full ReferenceZhang, Xinqiang, Tu, Hailing, Zhao, Hongbin, Yang, Mengmeng, Wang, Xiaona, Xiong, Yuhua, Yang, Zhimin, Du, Jun, Wang, Wenwu, Chen, Dapeng (2011) Band structure and electronic characteristics of cubic La2O3 gate dielectrics epitaxially grown on InP substrates. Applied Physics Letters, 99 (13). 132902pp. doi:10.1063/1.3643470
Plain TextZhang, Xinqiang, Tu, Hailing, Zhao, Hongbin, Yang, Mengmeng, Wang, Xiaona, Xiong, Yuhua, Yang, Zhimin, Du, Jun, Wang, Wenwu, Chen, Dapeng (2011) Band structure and electronic characteristics of cubic La2O3 gate dielectrics epitaxially grown on InP substrates. Applied Physics Letters, 99 (13). 132902pp. doi:10.1063/1.3643470
In(2011, September) Applied Physics Letters Vol. 99 (13) AIP Publishing

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