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Tsai, Jung-Hui, Kang, Yu-Chi, Hsu, I-Hsuan, Weng, Tzu-Yen (2006) Investigation of InP/InGaAs superlattice-emitter bipolar transistor with multiple negative-differential-resistance regions. Materials Chemistry and Physics, 100. 340-344 doi:10.1016/j.matchemphys.2006.01.008

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Reference TypeJournal (article/letter/editorial)
TitleInvestigation of InP/InGaAs superlattice-emitter bipolar transistor with multiple negative-differential-resistance regions
JournalMaterials Chemistry and Physics
AuthorsTsai, Jung-HuiAuthor
Kang, Yu-ChiAuthor
Hsu, I-HsuanAuthor
Weng, Tzu-YenAuthor
Year2006 (December)Volume100
PublisherElsevier BV
DOIdoi:10.1016/j.matchemphys.2006.01.008Search in ResearchGate
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Mindat Ref. ID3054944Long-form Identifiermindat:1:5:3054944:9
GUID0
Full ReferenceTsai, Jung-Hui, Kang, Yu-Chi, Hsu, I-Hsuan, Weng, Tzu-Yen (2006) Investigation of InP/InGaAs superlattice-emitter bipolar transistor with multiple negative-differential-resistance regions. Materials Chemistry and Physics, 100. 340-344 doi:10.1016/j.matchemphys.2006.01.008
Plain TextTsai, Jung-Hui, Kang, Yu-Chi, Hsu, I-Hsuan, Weng, Tzu-Yen (2006) Investigation of InP/InGaAs superlattice-emitter bipolar transistor with multiple negative-differential-resistance regions. Materials Chemistry and Physics, 100. 340-344 doi:10.1016/j.matchemphys.2006.01.008
In(2006, December) Materials Chemistry and Physics Vol. 100 (2) Elsevier BV

See Also

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Tsai, Jung-Hui (2003) Multiple negative differential resistance of InP/InGaAs superlattice-emitter resonant-tunneling bipolar transistor at room temperature. Applied Physics Letters, 83 (13). 2695-2697 doi:10.1063/1.1615313
Tsai, Jung-Hui, Zhu, King-Poul, Chu, Ying-Cheng, Chiu, Shao-Yen (2004) A functional InGaP/GaAs double heterostructure-emitter bipolar transistor with multiple negative-differential-resistance switches. Materials Chemistry and Physics, 87. 435-438 doi:10.1016/j.matchemphys.2004.06.027
Tsai, Jung-Hui, Chu, Yu-Jui (2005) Influence of spacer layer on InP/InGaAs Ī“-doped heterojunction bipolar transistors. Materials Chemistry and Physics, 91. 431-436 doi:10.1016/j.matchemphys.2004.12.003
Wu, Yi-Chen, Tsai, Jung-Hui, Liou, Syuan-Hao, Lin, Pao-Sheng, Chen, Yu-Chi, Chiang, Te-Kuang (2018) InGaP/GaAs Superlattice-Emitter and GaAsBi Base Heterojunction Bipolar Transistor with High Current-Gain Linearity. Science of Advanced Materials, 10. 651-654 doi:10.1166/sam.2018.3140
Tsai, Jung-Hui, Lee, Yuan-Hong, Dale, Ning-Feng, Sheng, Jhih-Syuan, Ma, Yung-Chun, Ye, Sheng-Shiun (2010) Application of InGaAs/GaAs superlattice-base structure for InGaP/GaAs superlattice-emitter bipolar transistor. Applied Physics Letters, 96 (6). 63505pp. doi:10.1063/1.3302462
Lin, Po-Hung, Cheng, Shiou-Ying, Chang, Wen-Lung, Pan, Hsi-Jen, Shie, Yung-Hsin, Liu, Wen-Chau, Tsai, Jung-Hui (1998) Investigation of an AlInAs/GaInAs superlattice-confined emitter bipolar transistor (SCEBT). Materials Chemistry and Physics, 57. 77-80 doi:10.1016/s0254-0584(98)00193-x
Wu, Yu-Huei, Su, Jan-Shing, Hsu, Wei-Chou, Lin, Wei, WenChauLiu, , Kao, Ming-Jer, Hsu, Rong-Tay (1995) Emitter Edge-Thinning Effect on InGaAs/InP Double-Heterostructure-Emitter Bipolar Transistor. Japanese Journal of Applied Physics, 34. 5908-5911 doi:10.1143/jjap.34.5908
Wu, C. L., Hsu, W. C., Tsai, M. S., Shieh, H. M. (1995) Very strong negative differential resistance realā€space transfer transistor using a multiple Ī“ā€doping GaAs/InGaAs pseudomorphic heterostructure. Applied Physics Letters, 66 (6). 739-741 doi:10.1063/1.114117
Tsai, Jung-Hui (2016) Al0.2Ga0.3In0.5P/Al0.1Ga0.4In0.5P/InGaP/GaAs Triple Heterostructure-Emitter Bipolar Transistor. Science of Advanced Materials, 8. 421-424 doi:10.1166/sam.2016.2532
Lour, Wen-Shiung, Liu, Wen-Chau (1991) Negative-Differential-Resistance (NDR) Superlattice-Emitter Transistor. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l564
Tsai, Jung-Hui (2011) Comparative Studies on InGaP/GaAs Heterostructure-Emitter Bipolar Transistors with Tunneling- and Superlattice-Confinement Structures. Journal of the Electrochemical Society, 158. doi:10.1149/1.3565024
 
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