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Tsai, Jung-Hui (2003) Multiple negative differential resistance of InP/InGaAs superlattice-emitter resonant-tunneling bipolar transistor at room temperature. Applied Physics Letters, 83 (13). 2695-2697 doi:10.1063/1.1615313

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Reference TypeJournal (article/letter/editorial)
TitleMultiple negative differential resistance of InP/InGaAs superlattice-emitter resonant-tunneling bipolar transistor at room temperature
JournalApplied Physics Letters
AuthorsTsai, Jung-HuiAuthor
Year2003 (September 29)Volume83
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.1615313Search in ResearchGate
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Mindat Ref. ID8536437Long-form Identifiermindat:1:5:8536437:0
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Full ReferenceTsai, Jung-Hui (2003) Multiple negative differential resistance of InP/InGaAs superlattice-emitter resonant-tunneling bipolar transistor at room temperature. Applied Physics Letters, 83 (13). 2695-2697 doi:10.1063/1.1615313
Plain TextTsai, Jung-Hui (2003) Multiple negative differential resistance of InP/InGaAs superlattice-emitter resonant-tunneling bipolar transistor at room temperature. Applied Physics Letters, 83 (13). 2695-2697 doi:10.1063/1.1615313
In(2003, September) Applied Physics Letters Vol. 83 (13) AIP Publishing

See Also

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Tsai, Jung-Hui, Kang, Yu-Chi, Hsu, I-Hsuan, Weng, Tzu-Yen (2006) Investigation of InP/InGaAs superlattice-emitter bipolar transistor with multiple negative-differential-resistance regions. Materials Chemistry and Physics, 100. 340-344 doi:10.1016/j.matchemphys.2006.01.008
Tsai, Jung-Hui (1999) Application of an AlGaAs/GaAs/InGaAs heterostructure emitter for a resonant-tunneling transistor. Applied Physics Letters, 75 (17). 2668-2670 doi:10.1063/1.125113
Tsai, Jung-Hui, Lee, Yuan-Hong, Dale, Ning-Feng, Sheng, Jhih-Syuan, Ma, Yung-Chun, Ye, Sheng-Shiun (2010) Application of InGaAs/GaAs superlattice-base structure for InGaP/GaAs superlattice-emitter bipolar transistor. Applied Physics Letters, 96 (6). 63505pp. doi:10.1063/1.3302462
Tsai, Jung-Hui, Zhu, King-Poul, Chu, Ying-Cheng, Chiu, Shao-Yen (2004) A functional InGaP/GaAs double heterostructure-emitter bipolar transistor with multiple negative-differential-resistance switches. Materials Chemistry and Physics, 87. 435-438 doi:10.1016/j.matchemphys.2004.06.027
Moon, Jeong S., Rajavel, Rajesh, Bui, Steven, Wong, Danny, Chow, David H. (2005) Room-temperature InAlAs∕InGaAs∕InP planar resonant tunneling-coupled transistor. Applied Physics Letters, 87 (18). 183110pp. doi:10.1063/1.2126108
Lin, Y. S. (2003) Breakdown characteristics of InP/InGaAs composite-collector double heterojunction bipolar transistor. Applied Physics Letters, 83 (26). 5545-5547 doi:10.1063/1.1637147
Tsai, Jung-Hui (2015) On the AlGaInP-bulk and AlGaInP/GaAs-superlattice confinement effects for heterostructure-emitter bipolar transistors. Applied Physics Letters, 106 (6). 63502pp. doi:10.1063/1.4908120
Liu, Wen‐Chau, Lour, Wen‐Shiung (1991) A new functional, resonant‐tunneling bipolar transistor with a superlattice emitter. Journal of Applied Physics, 70 (1). 485-489 doi:10.1063/1.350253
Tsai, Jung-Hui (2001) Quantized Resonant-Tunneling Phenomena of AlGaAs/GaAs/InGaAs Heterojunction Bipolar Transistors. Japanese Journal of Applied Physics, 40. 5865-5870 doi:10.1143/jjap.40.5865
Bayram, C., Vashaei, Z., Razeghi, M. (2010) Room temperature negative differential resistance characteristics of polar III-nitride resonant tunneling diodes. Applied Physics Letters, 97 (9). 92104pp. doi:10.1063/1.3484280
Yang, C. H. (1992) Realization of a field‐effect resonant tunneling transistor at room temperature: Observation of negative transconductance due to quantum tunneling. Applied Physics Letters, 60 (10). 1250-1252 doi:10.1063/1.107487
 
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