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Karataş, Ş., Altındal, Ş., Çakar, M. (2005) Current transport in Zn/p-Si(100) Schottky barrier diodes at high temperatures. Physica B: Condensed Matter, 357 (3). 386-397 doi:10.1016/j.physb.2004.12.003

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Reference TypeJournal (article/letter/editorial)
TitleCurrent transport in Zn/p-Si(100) Schottky barrier diodes at high temperatures
JournalPhysica B: Condensed Matter
AuthorsKarataş, Ş.Author
Altındal, Ş.Author
Çakar, M.Author
Year2005 (March)Volume357
Issue3
PublisherElsevier BV
DOIdoi:10.1016/j.physb.2004.12.003Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID4060997Long-form Identifiermindat:1:5:4060997:1
GUID0
Full ReferenceKarataş, Ş., Altındal, Ş., Çakar, M. (2005) Current transport in Zn/p-Si(100) Schottky barrier diodes at high temperatures. Physica B: Condensed Matter, 357 (3). 386-397 doi:10.1016/j.physb.2004.12.003
Plain TextKarataş, Ş., Altındal, Ş., Çakar, M. (2005) Current transport in Zn/p-Si(100) Schottky barrier diodes at high temperatures. Physica B: Condensed Matter, 357 (3). 386-397 doi:10.1016/j.physb.2004.12.003
In(2005, March) Physica B: Condensed Matter Vol. 357 (3) Elsevier BV

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