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Zeyrek, S., Altındal, Ş., Yüzer, H., Bülbül, M.M. (2006) Current transport mechanism in Al/Si3N4/p-Si (MIS) Schottky barrier diodes at low temperatures. Applied Surface Science, 252. 2999-3010 doi:10.1016/j.apsusc.2005.05.008

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Reference TypeJournal (article/letter/editorial)
TitleCurrent transport mechanism in Al/Si3N4/p-Si (MIS) Schottky barrier diodes at low temperatures
JournalApplied Surface Science
AuthorsZeyrek, S.Author
Altındal, Ş.Author
Yüzer, H.Author
Bülbül, M.M.Author
Year2006 (February)Volume252
PublisherElsevier BV
DOIdoi:10.1016/j.apsusc.2005.05.008Search in ResearchGate
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Mindat Ref. ID9909213Long-form Identifiermindat:1:5:9909213:3
GUID0
Full ReferenceZeyrek, S., Altındal, Ş., Yüzer, H., Bülbül, M.M. (2006) Current transport mechanism in Al/Si3N4/p-Si (MIS) Schottky barrier diodes at low temperatures. Applied Surface Science, 252. 2999-3010 doi:10.1016/j.apsusc.2005.05.008
Plain TextZeyrek, S., Altındal, Ş., Yüzer, H., Bülbül, M.M. (2006) Current transport mechanism in Al/Si3N4/p-Si (MIS) Schottky barrier diodes at low temperatures. Applied Surface Science, 252. 2999-3010 doi:10.1016/j.apsusc.2005.05.008
In(n.d.) Applied Surface Science Vol. 252. Elsevier BV

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Altındal, Ş., Kanbur, H., Yıldız, D.E., Parlak, M. (2007) Current conduction mechanism in Al/p-Si Schottky barrier diodes with native insulator layer at low temperatures. Applied Surface Science, 253. 5056-5061 doi:10.1016/j.apsusc.2006.11.015
Karataş, Ş., Altındal, Ş., Çakar, M. (2005) Current transport in Zn/p-Si(100) Schottky barrier diodes at high temperatures. Physica B: Condensed Matter, 357 (3). 386-397 doi:10.1016/j.physb.2004.12.003
Dökme, İlbilge, Altindal, Şemsettin, Bülbül, M. Mahir (2006) The barrier height inhomogeneity in Al/p-Si Schottky barrier diodes with native insulator layer. Applied Surface Science, 252. 7749-7754 doi:10.1016/j.apsusc.2005.09.046
Tataroğlu, A., Altındal, Ş., Bülbül, M.M. (2006) 60Co γ irradiation effects on the current–voltage (I–V) characteristics of Al/SiO2/p-Si (MIS) Schottky diodes. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 568 (2). 863-868 doi:10.1016/j.nima.2006.08.047
Altındal, Ş., Kanbur, H., Tataroğlu, A., Bülbül, M.M. (2007) The barrier height distribution in identically prepared Al/p-Si Schottky diodes with the native interfacial insulator layer (SiO2). Physica B: Condensed Matter, 399 (2). 146-154 doi:10.1016/j.physb.2007.06.002
Kanbur, H., Altındal, Ş., Tataroğlu, A. (2005) The effect of interface states, excess capacitance and series resistance in the Al/SiO2/p-Si Schottky diodes. Applied Surface Science, 252. 1732-1738 doi:10.1016/j.apsusc.2005.03.122
Yıldız, D. E., Altındal, Ş., Kanbur, H. (2008) Gaussian distribution of inhomogeneous barrier height in Al/SiO2/p-Si Schottky diodes. Journal of Applied Physics, 103 (12). 124502pp. doi:10.1063/1.2936963
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Afandiyeva, I.M., Demirezen, S., Altındal, Ş. (2013) Temperature dependence of forward and reverse bias current–voltage characteristics in Al–TiW–PtSi/n-Si Schottky barrier diodes with the amorphous diffusion barrier. Journal of Alloys and Compounds, 552. 423-429 doi:10.1016/j.jallcom.2012.11.093
Siad, M, Keffous, A, Mamma, S, Belkacem, Y, Menari, H (2004) Correlation between series resistance and parameters of Al/n-Si and Al/p-Si Schottky barrier diodes. Applied Surface Science, 236. 366-376 doi:10.1016/j.apsusc.2004.05.009
 
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