Wenzel, Kevin W., Petrasso, Richard D. (1988) X‐ray response of silicon surface‐barrier diodes at 8 and 17.5 keV: Evidence that the x‐ray sensitive depth is not generally the depletion depth (abstract). Review of Scientific Instruments, 59 (8). 1849 doi:10.1063/1.1140080
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | X‐ray response of silicon surface‐barrier diodes at 8 and 17.5 keV: Evidence that the x‐ray sensitive depth is not generally the depletion depth (abstract) | ||
Journal | Review of Scientific Instruments | ||
Authors | Wenzel, Kevin W. | Author | |
Petrasso, Richard D. | Author | ||
Year | 1988 (August) | Volume | 59 |
Issue | 8 | ||
Publisher | AIP Publishing | ||
DOI | doi:10.1063/1.1140080Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 4850675 | Long-form Identifier | mindat:1:5:4850675:9 |
GUID | 0 | ||
Full Reference | Wenzel, Kevin W., Petrasso, Richard D. (1988) X‐ray response of silicon surface‐barrier diodes at 8 and 17.5 keV: Evidence that the x‐ray sensitive depth is not generally the depletion depth (abstract). Review of Scientific Instruments, 59 (8). 1849 doi:10.1063/1.1140080 | ||
Plain Text | Wenzel, Kevin W., Petrasso, Richard D. (1988) X‐ray response of silicon surface‐barrier diodes at 8 and 17.5 keV: Evidence that the x‐ray sensitive depth is not generally the depletion depth (abstract). Review of Scientific Instruments, 59 (8). 1849 doi:10.1063/1.1140080 | ||
In | (1988, August) Review of Scientific Instruments Vol. 59 (8) AIP Publishing |
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