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Skolnik, L. H., Spitzer, W. G., Kahan, A., Hunsperger, R. G. (1971) Infrared Localized‐Vibrational‐Mode Absorption of Ion‐Implanted Aluminum and Phosphorous in Gallium Arsenide. Journal of Applied Physics, 42 (13). 5223-5229 doi:10.1063/1.1659928

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Reference TypeJournal (article/letter/editorial)
TitleInfrared Localized‐Vibrational‐Mode Absorption of Ion‐Implanted Aluminum and Phosphorous in Gallium Arsenide
JournalJournal of Applied Physics
AuthorsSkolnik, L. H.Author
Spitzer, W. G.Author
Kahan, A.Author
Hunsperger, R. G.Author
Year1971 (December)Volume42
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.1659928Search in ResearchGate
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Mindat Ref. ID4966408Long-form Identifiermindat:1:5:4966408:7
GUID0
Full ReferenceSkolnik, L. H., Spitzer, W. G., Kahan, A., Hunsperger, R. G. (1971) Infrared Localized‐Vibrational‐Mode Absorption of Ion‐Implanted Aluminum and Phosphorous in Gallium Arsenide. Journal of Applied Physics, 42 (13). 5223-5229 doi:10.1063/1.1659928
Plain TextSkolnik, L. H., Spitzer, W. G., Kahan, A., Hunsperger, R. G. (1971) Infrared Localized‐Vibrational‐Mode Absorption of Ion‐Implanted Aluminum and Phosphorous in Gallium Arsenide. Journal of Applied Physics, 42 (13). 5223-5229 doi:10.1063/1.1659928
In(1971, December) Journal of Applied Physics Vol. 42 (13) AIP Publishing

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Skolnik, L. H., Spitzer, W. G., Kahan, A., Euler, F., Hunsperger, R. G. (1972) Localized Vibrational Mode Absorption of Ion‐Implanted Silicon in GaAs. Journal of Applied Physics, 43 (5). 2146-2150 doi:10.1063/1.1661465
Vodopyanov, L. K., Kachare, A. H., Spitzer, W. G., Wilson, R. G. (1975) Localized vibrational mode absorption of ion−implanted Be in ZnTe. Journal of Applied Physics, 46 (1). 446-448 doi:10.1063/1.322257
Kachare, A. H., Spitzer, W. G., Kahan, A., Euler, F. K., Whatley, T. A. (1973) Ion‐implanted nitrogen in gallium arsenide. Journal of Applied Physics, 44 (10). 4393-4399 doi:10.1063/1.1661971
Leung, P. C., Fredrickson, J., Spitzer, W. G., Kahan, A., Bouthillette, L. (1974) Infrared absorption of mixed silicon isotope pairs in gallium arsenide. Journal of Applied Physics, 45 (3). 1009-1012 doi:10.1063/1.1663362
Kachare, A. H., Spitzer, W. G., Euler, F. K., Kahan, A. (1974) Infrared reflection of ion‐implanted GaAs. Journal of Applied Physics, 45 (7). 2938-2946 doi:10.1063/1.1663706
Lorimor, O. G., Spitzer, W. G. (1966) Local Mode Absorption in Compensated Silicon‐Doped Gallium Arsenide. Journal of Applied Physics, 37 (10). 3687-3691 doi:10.1063/1.1707905
Cosand, A. E., Spitzer, W. G. (1971) Infrared Absorption of Lattice Modes and the Silicon Local Mode in GexSi1−xAlloys. Journal of Applied Physics, 42 (13). 5241-5249 doi:10.1063/1.1659930
Spitzer, W. G., Kahan, A., Bouthillette, L. (1969) Localized Vibrational Modes in Electron‐Irradiated GaAs:Si. Journal of Applied Physics, 40 (8). 3398-3400 doi:10.1063/1.1658198
Dutt, B. V., Spitzer, W. G. (1977) A localized vibrational mode study of infrared absorption of CdTe : P. Journal of Applied Physics, 48 (3). 954-960 doi:10.1063/1.323715
Spitzer, W. G., Allred, W. (1968) Local‐Mode Absorption and Defects in Compensated Silicon‐Doped Gallium Arsenide. Journal of Applied Physics, 39 (11). 4999-5009 doi:10.1063/1.1655899
Theis, W. M., Spitzer, W. G. (1984) High‐resolution measurements of localized vibrational mode infrared absorption of Si‐doped GaAs. Journal of Applied Physics, 56 (4). 890-898 doi:10.1063/1.334064
 
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