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Theis, W. M., Spitzer, W. G. (1984) High‐resolution measurements of localized vibrational mode infrared absorption of Si‐doped GaAs. Journal of Applied Physics, 56 (4). 890-898 doi:10.1063/1.334064

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Reference TypeJournal (article/letter/editorial)
TitleHigh‐resolution measurements of localized vibrational mode infrared absorption of Si‐doped GaAs
JournalJournal of Applied Physics
AuthorsTheis, W. M.Author
Spitzer, W. G.Author
Year1984 (August 15)Volume56
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.334064Search in ResearchGate
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Mindat Ref. ID5020976Long-form Identifiermindat:1:5:5020976:1
GUID0
Full ReferenceTheis, W. M., Spitzer, W. G. (1984) High‐resolution measurements of localized vibrational mode infrared absorption of Si‐doped GaAs. Journal of Applied Physics, 56 (4). 890-898 doi:10.1063/1.334064
Plain TextTheis, W. M., Spitzer, W. G. (1984) High‐resolution measurements of localized vibrational mode infrared absorption of Si‐doped GaAs. Journal of Applied Physics, 56 (4). 890-898 doi:10.1063/1.334064
In(1984, August) Journal of Applied Physics Vol. 56 (4) AIP Publishing

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Theis, W. M., Talwar, D. N., Vandevyver, M., Spitzer, W. G. (1985) High‐resolution infrared absorption measurements of Al‐doped ZnSe. Journal of Applied Physics, 58 (7). 2553-2558 doi:10.1063/1.335935
Dutt, B. V., Spitzer, W. G. (1977) A localized vibrational mode study of infrared absorption of CdTe : P. Journal of Applied Physics, 48 (3). 954-960 doi:10.1063/1.323715
Spitzer, W. G., Waldner, M. (1965) Localized Mode Measurements of Boron‐ and Lithium‐Doped Silicon. Journal of Applied Physics, 36 (8). 2450-2453 doi:10.1063/1.1714509
Skolnik, L. H., Spitzer, W. G., Kahan, A., Euler, F., Hunsperger, R. G. (1972) Localized Vibrational Mode Absorption of Ion‐Implanted Silicon in GaAs. Journal of Applied Physics, 43 (5). 2146-2150 doi:10.1063/1.1661465
Skolnik, L. H., Spitzer, W. G., Kahan, A., Hunsperger, R. G. (1971) Infrared Localized‐Vibrational‐Mode Absorption of Ion‐Implanted Aluminum and Phosphorous in Gallium Arsenide. Journal of Applied Physics, 42 (13). 5223-5229 doi:10.1063/1.1659928
Lorimor, O. G., Spitzer, W. G. (1967) Some Local‐Mode Measurements of Li‐Diffused, Te‐Doped GaAs. Journal of Applied Physics, 38 (6). 2713-2714 doi:10.1063/1.1709994
Dutt, B. V., Al‐Delaimi, M., Spitzer, W. G. (1976) Point defects, localized vibrational modes, and free‐carrier absorption of Al‐doped CdTe. Journal of Applied Physics, 47 (2). 565-572 doi:10.1063/1.322661
Vodopyanov, L. K., Kachare, A. H., Spitzer, W. G., Wilson, R. G. (1975) Localized vibrational mode absorption of ion−implanted Be in ZnTe. Journal of Applied Physics, 46 (1). 446-448 doi:10.1063/1.322257
Leung, P. C., Skolnik, L. H., Allred, W. P., Spitzer, W. G. (1972) Infrared absorption study of Li‐diffused Mg‐doped GaAs. Journal of Applied Physics, 43 (10). 4096-4104 doi:10.1063/1.1660879
Lorimor, O. G., Spitzer, W. G., Waldner, M. (1966) Local Mode Absorption of Al and P in GaAs. Journal of Applied Physics, 37 (6). 2509 doi:10.1063/1.1708843
Chen, R. T., Rana, V., Spitzer, W. G. (1980) Infrared absorption bands induced by Si‐related defects in GaAs: Absorption cross sections. Journal of Applied Physics, 51 (3). 1532-1538 doi:10.1063/1.327805
 
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