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Harari, E., Wang, S., Royce, B. S. H. (1975) Low−temperature irradiation effects in SiO2−insulated MIS devices. Journal of Applied Physics, 46 (3). 1310-1317 doi:10.1063/1.321698

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Reference TypeJournal (article/letter/editorial)
TitleLow−temperature irradiation effects in SiO2−insulated MIS devices
JournalJournal of Applied Physics
AuthorsHarari, E.Author
Wang, S.Author
Royce, B. S. H.Author
Year1975 (March)Volume46
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.321698Search in ResearchGate
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Mindat Ref. ID4984564Long-form Identifiermindat:1:5:4984564:6
GUID0
Full ReferenceHarari, E., Wang, S., Royce, B. S. H. (1975) Low−temperature irradiation effects in SiO2−insulated MIS devices. Journal of Applied Physics, 46 (3). 1310-1317 doi:10.1063/1.321698
Plain TextHarari, E., Wang, S., Royce, B. S. H. (1975) Low−temperature irradiation effects in SiO2−insulated MIS devices. Journal of Applied Physics, 46 (3). 1310-1317 doi:10.1063/1.321698
In(1975, March) Journal of Applied Physics Vol. 46 (3) AIP Publishing

See Also

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Harari, E., Royce, B. S. H. (1973) The Effects of Electron and Hole Trapping on the Radiation Hardness of Al2O3 MIS Devices. IEEE Transactions on Nuclear Science, 20 (6) 280-287 doi:10.1109/tns.1973.4327408
Russell, T. J., Royce, B. S. H., Harari, E. (1975) Displacement Damage and Radiation Effects in Boron Implanted Sapphire. IEEE Transactions on Nuclear Science, 22 (6) 2250-2252 doi:10.1109/tns.1975.4328114
Harari, E., Royce, B. S. H. (1973) Oxide Charge Trapping Induced by Ion Implantation in SiO2. IEEE Transactions on Nuclear Science, 20 (6) 288-292 doi:10.1109/tns.1973.4327409
Myhra, S., Gardiner, R. B. (1975) Electron−irradiation−induced damage recovery effects in lightly dopedn− andp−type α−tin. Journal of Applied Physics, 46 (3). 1043-1048 doi:10.1063/1.322208
Brown, B. S., Freyhardt, H. C., Blewitt, T. H. (1974) Effects of low‐temperature fast‐neutron irradiation on ac losses in NbTi. Journal of Applied Physics, 45 (6). 2724-2727 doi:10.1063/1.1663656
Blewitt, T. H., Coltman, R. R., Klabunde, C. E., Noggle, T. S. (1957) Low‐Temperature Reactor Irradiation Effects in Metals. Journal of Applied Physics, 28 (6). 639-644 doi:10.1063/1.1722822
Harari, E., Royce, B.S.H. (1973) Trap structure of pyrolytic Al2O3in MOS capacitors. Applied Physics Letters, 22 (3). 106-107 doi:10.1063/1.1654568
King, R. W. P., Lee, K.−M., Smith, G. S., Mishra, S. R. (1975) Insulated linear antenna: Theory and experiment. II. Journal of Applied Physics, 46 (3). 1091-1098 doi:10.1063/1.321708
Purkiss, S., Collins, R. A., Temple, B. K. (1975) Switching and polarity‐dependent memory effects in Se‐SnO2and Se‐In2O3thin‐film devices. Journal of Applied Physics, 46 (5). 2301-2303 doi:10.1063/1.321827
Harari, E., Royce, B.S.H. (1973) Erratum: Trap structure of pyrolytic Al2O3 in MOS capacitors. Applied Physics Letters, 22 (12). 688 doi:10.1063/1.1654554
Bahadur, Harish (1994) Low‐temperature irradiation effects in natural crystalline quartz. Journal of Applied Physics, 75 (3). 1420-1425 doi:10.1063/1.356423
 
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