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Harari, E., Royce, B.S.H. (1973) Erratum: Trap structure of pyrolytic Al2O3 in MOS capacitors. Applied Physics Letters, 22 (12). 688 doi:10.1063/1.1654554

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Reference TypeJournal (article/letter/editorial)
TitleErratum: Trap structure of pyrolytic Al2O3 in MOS capacitors
JournalApplied Physics Letters
AuthorsHarari, E.Author
Royce, B.S.H.Author
Year1973 (June 15)Volume22
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.1654554Search in ResearchGate
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Mindat Ref. ID8457222Long-form Identifiermindat:1:5:8457222:8
GUID0
Full ReferenceHarari, E., Royce, B.S.H. (1973) Erratum: Trap structure of pyrolytic Al2O3 in MOS capacitors. Applied Physics Letters, 22 (12). 688 doi:10.1063/1.1654554
Plain TextHarari, E., Royce, B.S.H. (1973) Erratum: Trap structure of pyrolytic Al2O3 in MOS capacitors. Applied Physics Letters, 22 (12). 688 doi:10.1063/1.1654554
In(1973, June) Applied Physics Letters Vol. 22 (12) AIP Publishing

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Harari, E., Royce, B.S.H. (1973) Trap structure of pyrolytic Al2O3in MOS capacitors. Applied Physics Letters, 22 (3). 106-107 doi:10.1063/1.1654568
Fahrner, W., Goetzberger, A. (1973) Erratum: Determination of deep energy levels in Si by MOS techniques. Applied Physics Letters, 22 (7). 347 doi:10.1063/1.1654667
Berger, Josef (1974) Nonequilibrium phenomena in ion‐implanted MOS capacitors. Applied Physics Letters, 24 (10). 497-499 doi:10.1063/1.1655027
Huber, E. E., Cohen, M. S., Smith, D. O. (1970) ELECTRON BEAM DETECTION OF CHARGE STORAGE IN MOS CAPACITORS. Applied Physics Letters, 16 (4). 147-149 doi:10.1063/1.1653137
Zaininger, K. H. (1966) ELECTRON BOMBARDMENT OF MOS CAPACITORS. Applied Physics Letters, 8 (6). 140-142 doi:10.1063/1.1754525
Kamata, Hironobu, Kita, Koji (2017) Design of Al2O3/SiO2 laminated stacks with multiple interface dipole layers to achieve large flatband voltage shifts of MOS capacitors. Applied Physics Letters, 110 (10). 102106pp. doi:10.1063/1.4978223
Harari, E., Wang, S., Royce, B. S. H. (1975) Low−temperature irradiation effects in SiO2−insulated MIS devices. Journal of Applied Physics, 46 (3). 1310-1317 doi:10.1063/1.321698
Zhu, Renqiang, Lin, Jinpei, Gu, Hong, Chen, Lixuan, Zhang, Bo, Liu, Hezhou, Liu, Xinke (2025) Vertical Al2O3/GaN MOS capacitors with PEALD-GaOx interlayer passivation. Applied Physics Letters, 126 (8). doi:10.1063/5.0245266
Boudry, M.R. (1973) Theoretical origins of Nss peaks observed in Gray‐Brown MOS studies. Applied Physics Letters, 22 (10). 530-531 doi:10.1063/1.1654496
Harari, E., Royce, B. S. H. (1973) The Effects of Electron and Hole Trapping on the Radiation Hardness of Al2O3 MIS Devices. IEEE Transactions on Nuclear Science, 20 (6) 280-287 doi:10.1109/tns.1973.4327408
Brews, J. R. (1973) Limitations upon photoinjection studies of charge distributions close to interfaces in MOS capacitors. Journal of Applied Physics, 44 (1). 379-384 doi:10.1063/1.1661891
 
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